Engineering topics
Publications and source records attributed to Katzeff, J. S..
Laser anneals silicon solar cells rapidly enough for use in production. Laser frequently doubled neoduyminum: yttrium-aluminum-garnet (Nd:YAG) device. 30-m-diameter spot formed by lasers covers enough area to process silicon wafers rapidly. Laser anealed cells have efficiencies greater than 15 percent.
The merits of large spot size pulsed laser annealing of phosphorus implanted, Czochralski grown silicon for function formation of solar cells are evaluated. The feasibility and requirements are also determined to scale-up a laser system to anneal 7.62 cm diameter wafers at a rate of one wafer/second. Results show that laser annealing yields active, defect-free, shallow junction devices. Functional cells with AM 1 conversion efficiencies up to 15.4% for 2 x 2 cm and 2 x 4 cm sizes were attained. For larger cells, 7.62 cm dia., conversion efficiencies ranged up to 14.5%. Experiments showed that texture etched surfaces are not compatible with pulsed laser annealing due to the surface melting caused by the laser energy. When compared with furnace annealed cells, the laser annealed cells generally exhibited conversion efficiencies which were equal to or better than those furnace annealed. In addition, laser annealing has greater throughput potential.
The possibility of using high-energy Q-switched Nd:glass lasers to form pn junctions in solar cells by annealing ion-implanted substrates is investigated. The properties of laser annealed cells are analyzed by electrical, transmission electron microscopy, Rutherford backscattering and secondary ion mass spectrometry techniques. Tests indicate the laser annealed substrates to be damage-free and electrically active. Similar reference analysis of ion-implanted furnace-annealed substrates reveals the presence of residual defects in the form of dislocation lines and loops with substantial impurity redistribution evident for some anneal temperature/time regimes. Fabricated laser annealed cells exhibit excellent conversion efficiency. It is noted that additional improvements are anticipated once the anneal parameters for a back surface field are optimized.
Results of a study to utilize an Nd:glass laser for production line annealing of ion implantation induced damage in solar cells are reported. Czochralski-grown and sawn Si wafers 7.6 cm in diam, 0.35 mm thick, were implanted with phosphorus junctions and boron BSFs. Annealing with electron beam, laser, and firing of an Al paste to form the BSFs in different cells was compared. The laser was employed at 1.06 and 0.53 micron and in combination of both, with a 20-50 nsec pulsewidth, and energy densities of 1.2, 1.5, 1.9, and 2.1 J/sq cm. Best optical coupling was observed with the combined wavelengths and a 20 nsec pulse, using energy densities less than 1.5 J/sq cm. Although the Al sintered cells displayed the best characteristics, laser annealing is concluded to offer electrically active, defect-free, shallow junction Si substrates for high efficiency cells.
Development of low cost solar cells fabrication technology is being sponsored by NASA JPL as part of the Low Cost Solar Array Project (LSA). In conformance to Project requirements ion implantation and laser annealing were evaluated as junction formation techniques offering low cost-high throughput potential. Properties of cells fabricated utilizing this technology were analyzed by electrical, transmission electron microscopy, Rutherford backscattering and secondary ion mass spectrometry techniques. Tests indicated the laser annealed substrates to be damage free and electrically active. Similar analysis of ion implanted furnace annealed substrates revealed the presence of residual defects in the form of dislocation lines and loops with substantial impurity redistribution evident for some anneal temperature/time regimes. Fabricated laser annealed cells exhibited improved spectral response and conversion efficiency in comparison to furnace annealed cells. An economic projection for LSA indicates a potential for considerable savings from laser annealing technology.
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Parallel gap welding and ultrasonic bonding techniques were developed for joining selected interconnect materials (silver, aluminum, copper, silver plated molybdenum and Kovar) to silver-titanium and aluminum contact cells. All process variables have been evaluated leading to establishment of optimum solar cell, interconnect, electrodes and equipment criteria for obtainment of consistent high quality welds. Applicability of nondestructive testing of solar cell welds has been studied. A pre-weld monitoring system is being built and will be utilized in the numerically controlled parallel gap weld station.