Multi-Channel SiPM Readout ASIC with Digital Interface
Presenting project which is under development jointly with LBL
Engineering topics
Publications and source records attributed to Kay, Randolph R..
Presenting project which is under development jointly with LBL
A photonic integrated circuit and a method for its manufacture are provided. In an embodiment, an intermetal dielectric layer, for example, a silicon oxide layer, is contiguous between an upper metal layer and a lower metal layer on a substrate. One or more waveguides having top and bottom faces are formed in respective waveguide layers within the intermetal dielectric layer between the upper and lower metal layers. There is a distance of at least 600 nm from the upper metal layer to the top face of the uppermost of the several waveguides. There is a distance of at least 600 nm from the lower metal layer to the bottom face of the lowermost of the several waveguides. The waveguides are formed of silicon nitride for longer wavelengths and alumina for shorter wavelengths. These dimensions and materials are favorable for CMOS processing, among other things.
This report documents the results and findings of a one-year scoping study investigating multichannel readout application specific integrated circuits (ASICs) for interfacing to, and processing data from, silicon photomultiplier (SiPM) arrays. We document ASIC desired and required specifications for four applications supporting national security mission areas: neutron radiography, associated particle imaging, and two versions of kinematic neutron imaging cameras. While each application has a few unique requirements that stress capability, there is generally good agreement among most. Two recently developed ASIC devices were evaluated in a system-like configuration by interfacing these to scintillator crystals exposed to gamma and neutron sources. The 64-channel ORNL device delivered functional capability while meeting most mission requirements for neutron radiography. The Nalu Scientific device, a 32-channel full waveform digitizer, did not demonstrate reliable neutron / gamma separation but it is unclear if this was an ASIC issue or problems with test setup or firmware. A literature survey of other commercial and academic ASICs was undertaken to with the conclusion that existing devices do not meet all requirements.
In disclosed apparatus, a plurality of optical waveguides monolithically integrated on a surface ion trap substrate deliver light to the trapping sites. Electrical routing traces defined in one or more metallization levels deliver electrical signals to electrodes of the surface electrode ion trap. A plurality of photodetectors are integrated on the substrate and arranged to detect light from respective trapping sites.
A method is provided for fabricating a backside-illuminated photodetector in which a device wafer is joined to a readout wafer in an IC hybridization step. Before the IC hybridization step, the device layer is defined in the device wafer, and an LPCVD layer is formed over the device layer. The LPCVD layer may be a passivation layer, an antireflection coating, or both. The side of the device wafer having the LPCVD layer is bonded to a handle wafer, the IC is hybridized by mating the device wafer to the readout wafer, and the handle wafer is then removed, exposing the LPCVD layer. Because the LPCVD layer is formed before the active devices are fabricated, it can be made by high-temperature techniques for deposition and processing. Accordingly, a layer of high quality can be fabricated without any hazard to the active devices.
Apparatus for detecting radiation includes a sensor medium disposed within a cavity in a silicon-based substrate. An electrode arrangement is provided for collecting charge generated within the sensor medium by interactions with impinging radiation and drifted through the sensor medium. The electrode arrangement is constituted, in part, by a silicon portion of the substrate that is doped to increase its electrical conductivity and that defines part of the cavity wall.
An apparatus for detecting radiation is provided. In embodiments, at least one sensor is disposed on a surface of a wafer-like substrate. At least one sensor medium is fixed relative to the substrate, optically or electrically coupled to the sensor, and separated from the sensor by no more than the substrate thickness. An electronic signal-processing circuit is connected to the sensor and configured to produce an output when the sensor is stimulated by a product of an interaction between the sensor medium and impinging radiation. The sensor is configured to collect, from the sensor medium, charge and/or light produced within the sensor medium by interactions with impinging radiation.