Engineering topics
Publications and source records attributed to Keo, Sam.
We will report our recent efforts in achieving high performance in Antimonides type-II strained-layer superlattice based infrared photodectors using the barrier infrared detectors.
UNKNOWN
In this study optical modulation response and photoluminescence spectroscopy were used to study mid-wave Ga-free InAs/InAsSb superlattices. The minority carrier lifetimes in the different samples varied from 480 ns to 4700 ns, partly due to different background doping concentrations. It was shown that the photoluminescence intensity can be used as a fast non-destructive tool to predict the material quality. It was also demonstrated that it is crucial to use a low excitation power in the photoluminescence measurements in order to get a good correlation between the photoluminescence intensity and the minority carrier lifetime.
We developed 320x256 Complimentary Barrier Infrared (CBIRD) focal plane array (FPA) for long wave infrared (LWIR) imaging application. The FPA layers grown by molecular beam epitaxy (MBE) had 300 periods 1.9 micro m thick absorber. The CBIRD arrays showed the mean dark current density of 2.2 x 10(exp -4) A/cm2, when 128 mV bias voltage was applied. The long wave cut off was observed at 8.8 micrometers at the 50% peak and the maximum quantum efficiency was 54% at 5.6 micrometers. The arrays had 81% fill factor with 97% operability with noise equivalent difference temperature (NE(delta)T) of 18.6 mK and a mean detectivity of D*=1.3 x 10(exp 11) Hz(exp 1/2)/W.
In this paper, the relation between the photoluminescence (PL) intensity and the PL peak wavelength was studied. A linear decrease of the PL intensity with increasing cut-off wavelength of long wavelength infrared CBIRDs was observed at 77 K and the trend remained unchanged in the temperature range 10 - 77 K. This relation between the PL intensity and the peak wavelength can be favorably used for comparison of the optical quality of samples with different PL peak wavelengths. A strong increase of the width of the PL spectrum in the studied temperature interval was observed, which was attributed to thermal broadening.
In this study the material quality and optical properties of type II InAs/GaSb superlattices are investigated using transmission and photoluminescence (PL) spectroscopy. The influence of the material quality on the intensity of the luminescence and on the electrical properties of the detectors is studied and a good correlation between the photodetector current-voltage (IV) characteristics and the PL intensity is observed. Studies of the temperature dependence of the PL reveal that Shockley-Read-Hall processes are limiting the minority carrier lifetime in both the mid-IR wavelength and the long-IR wavelength detector material studied. These results demonstrate that PL spectroscopy is a valuable tool for optimization of infrared detectors.
InAsSb quantum-dot lasers near 2 micrometers were demonstrated in cw operation at room temperature with a threshold current density of 733 A,/cm(sup 2), output power of 3 mW/facet and a differential quantum efficiency of 13%.
InAsSb quantum-dot lasers near 2 pm were demonstrated in cw operation at room temperature with a threshold current density of below 1 kA/cm, output power of 3 mW/facet and a differential quantum efficiency of 13%.