Search NASA⌕ Search

Engineering topics

Kernell, R. L.

Publications and source records attributed to Kernell, R. L..

7 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

PIN photodiodes irradiated with 40- and 85-MeV protons

PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current, and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length, and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

Reft, C. S.↗
NASA NTRS1985

Radiation effects induced in pin photodiodes by 40- and 85-MeV protons

PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th power p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

Becher, J.↗
NASA NTRS1984

Ultraviolet converter transients induced by electrons

The output of ultraviolet converters typically used in satellite astronomy was monitored during irradiation with electrons from a sealed SR-90 source which approximated the peak flux in earth's outer electron belt. The signal induced by irradiation was attributed to two mechanisms: (1) photoelectrons resulting from photons created in the MgF2 window and (2) the direct impact of electrons on the phosphor. For irradiation at about 1 x 10 to the 7th e/sq cm sec, these two effects produced signals which were, in order of magnitude, the same as those produced by an incident UV flux (254 nm) of 10 to the 8th and 10 to the 7th photons/sq cm sec, respectively. In addition, the induced signal was investigated as a function of electron energy by irradiating another converter with 0.4-1.8-MeV electrons from a Van de Graaff. These results suggest that the dominant contribution to the electron-induced signal is Cerenkov photon production in the MgF2 window.

Kernell, R. L.↗
NASA NTRS1981

Radiation studies of optical and electronic components used in astronomical satellite studies

The synchronous orbit of the IUE carries the satellite through Earth's outer electron belt. A 40 mCi Sr90 source was used to simulate these electrons. A 5 mCi source of Co60 was used to simulate bremmstrahlung. A 10 MeV electron Linac and a 1.7 MeV electron Van de Graaf wer used to investigate the energy dependence of radiation effects and to perform radiations at a high flux rate. A 100 MeV proton cyclotron was used to simulate cosmic rays. Results are presented for three instrument systems of the IUE and measurements for specific components are reported. The three instrument systems were the ultraviolet converter, the fine error sensor (FES), and the SEC vidicon camera tube. The components were optical glasses, electronic components, silicon photodiodes, and UV window materials.

Becher, J.↗
NASA NTRS1980

Proton-induced degradation of VUV transmission of LiF and MgF2

Proton-induced degradation of vacuum ultraviolet (VUV) transmittance of LiF and MgF2 was measured for 85- and 600-MeV protons for a fluence up to 2.8 x 10 to the 13th p/sq cm. Transmittances were measured from 105 to 210 nm. When the irradiation level for a given material is expressed in terms of absorbed energy per unit of volume of crystal, 85- and 600-MeV protons produce the same degradation. MgF2 is substantially more radiation resistant than LiF in the VUV. Irradiation of LiF with 1.8 x 10 to the 13th p/sq cm at 85 MeV changed the transmittance of the hydrogen Ly-alpha line at 121.6 nm from 55 to 23%. The corresponding change for MgF2 was from 52 to 42% for 2.8 x 10 to the 13th p/sq cm.

Reft, C. S.↗