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Kerns, D. V., Jr.

Publications and source records attributed to Kerns, D. V., Jr..

Cost optimization in low volume VLSI circuits

The relationship of integrated circuit (IC) cost to electronic system cost is developed using models for integrated circuit cost which are based on design/fabrication approach. Emphasis is on understanding the relationship between cost and volume for custom circuits suitable for NASA applications. In this report, reliability is a major consideration in the models developed. Results are given for several typical IC designs using off the shelf, full custom, and semicustom IC's with single and double level metallization.

Cook, K. B., Jr.↗

Optimizing costs of VLSI circuits

Report analyzes costs of developing and producing low-production-volume, customized VLSI (very large-scale, integrated) circuits. Relationship is developed between IC cost and electronic system cost using IC cost models based on design/fabrication approach. Emphasis is on development of understanding between cost and volume for custom circuits to be used by NASA. Reliability is major cost component in models. Report is divided into five sections and includes four appendices with useful reference literature.

Cook, K. B., Jr.↗

Characterization and modeling of radiation effects NASA/MSFC semiconductor devices

A literature review of the near-Earth trapped radiation of the Van Allen Belts, the radiation within the solar system resulting from the solar wind, and the cosmic radiation levels of deep space showed that a reasonable simulation of space radiation, particularly the Earth orbital environment, could be simulated in the laboratory by proton bombardment. A 3 MeV proton accelerator was used to irradiate CMOS integrated circuits fabricated from three different processes. The drain current and output voltage for three inverters was recorded as the input voltage was swept from zero to ten volts after each successive irradiation. Device parameters were extracted. Possible damage mechanisms are discussed and recommendations for improved radiation hardness are suggested.

Kerns, D. V., Jr.↗