Engineering topics

Khan, Faisal

Publications and source records attributed to Khan, Faisal.

11 records

DOE OSTI2024

An Organic, Direct Bonded Copper, Multi-Layered, Ultra-Low Inductance Package for High-Power UWBG MOSFETs

The most common metalized substrates used in high-power switching packages consist of a ceramic layer such as Aluminum Nitride (AlN) sandwiched between two copper layers. Ceramic substrates are used because it has the key characteristic of having high dielectric strength while being thermally conductive. A large drawback to ceramic substrates is that they do not allow for a multi-layered circuit design. By replacing the traditional ceramic substrate with organic direct bonded copper (ODBC) we can open a wide range of possibilities when it comes to power module layout such as multi-layered circuits and double-sided cooling. Both benefits are critical while packaging high-performance Gallium Oxide (Ga2O3) MOSFETs. Because of Ga2O3's relatively poor thermal conductivity, a double-sided cooled package becomes necessary. Therefore, the use of ODBC provides the flexibility to fabricate copper traces carrying much higher currents, and by creating a multi-layered package, we can drastically reduce the parasitic inductance inside the power module. Achieving lower parasitic inductance is critical for an ultra-fast Ga2O3 package to avoid excessive voltage overshoot and ringing. Using ODBC, we have designed novel packages capable of handling the challenges presented by fast Ga2O3 switching. Using multi-physics modeling software, we can validate our design before building the prototype. Due to the simple process parameters needed to work with ODBC, we can rapidly create prototypes without using external vendors. This flexibility allows us to quickly design, build, and validate highly complex switching power modules to accommodate next generation, Ga2O3 switching devices.

ADVANCED PROPULSION SYSTEMS,ENGINEERING↗

DOE OSTI2024

Power Module Precursors and Prognostics

The ongoing work involves 1) the identification and evaluation of various electric signals as indicators to module failure and precursors to aging, and 2) the development of corresponding detection techniques. In the current phase, 1) the increase of on-state resistance is selected as the precursor to the power cycle aging of silicon carbide power MOSFET modules based on review and rest data. 2) A detection method leveraging the gate voltage fluctuations magnitude during commutation transients to inform the on-state resistance increase is investigated which has the benefit of being able to be integrated into the gate driver. A dedicated detection circuit for implementation is designed and simulated and is currently in fabrication.

ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2024

Standards Guidance for Electric Two- and Three-Wheelers and Charging Infrastructure in Pakistan

Electric two-wheelers (E2Ws) and electric three-wheelers (E3Ws) have reached upfront cost price parity as compared to their conventional counterparts in many markets (IEA 2022). Therefore, Pakistan has embraced E2Ws and E3Ws in their National Electric Vehicle Policy (Government of Pakistan 2019b). Specifically, this policy targets 50% of new two- and three-wheeler sales to be electric by 2030. In the short term, this policy targets five times as many E2Ws and E3Ws as cars, vans, and pickups. In order to meet these goals in a safe, reliable, and efficient manner, Pakistan needs to develop and implement standards related to E2W and E3W vehicles and charging infrastructure, including battery swap stations. Without standards, E2Ws and E3Ws can be dangerous, unreliable, incompatible with charging stations, or diminish the grid’s electricity quality (Goel and Singh 2019; Sasidharan 2020). Fortunately, there are several global and local efforts to establish standards that Pakistan can learn from or adopt. This document explains the purpose and process of standards development and introduces the international standards development organizations involved and relevant classification and testing systems. It then introduces and lists many standards related to the vehicles, batteries, and charging equipment so that Pakistan can adopt or reference these standards when developing its own.

33 ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2023

Automated Design-for-Reliability of a Power Electronics Module

The design of a power electronics module is a multiphysics problem and involves electrical, thermal, and reliability targets and constraints. Although the electrical and thermal design consider multiple aspects such as materials, geometry, and energy losses, reliability design is often limited to the selection of the attachment materials and electrical interconnect types. In this paper, we incorporate reliability metrics in the design phase by investigating the impact of package geometry on the thermomechanical behavior of the die-attachment material. To this end, we conducted thermal and power cycling simulations of a commercial six-pack power module with silicon carbide devices to compute junction temperature and strain energy density per cycle, respectively. We performed multiple simulations with different geometric dimensions and established a correlation between input features and output variables using subspace-based dimension reduction. The machine learning-based dimension reduction method serves as a surrogate model, which can be employed to identify the optimal module design from a thermal and reliability standpoint.

design-for-reliability↗

DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities

A wide range of utility applications require controllable switches with features such as high-voltage blocking and high-current carrying capacity, especially at high pulse width modulation (PWM) frequency. Low- and medium-voltage utility applications such as motor drives and flexible AC transmission systems as well as solid state transformers could also benefit from a low-cost high-voltage switching module. Wide-bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) metal oxide semiconductor field effect transistors (MOSFETs) are considered to be the present and next-generation device choices, although they have limitations. For relatively high-voltage applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low-voltage regime. This manuscript proposes a new half-bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in high-voltage applications. Constructed from bare SiC dies, this half-bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold, and cooling, (3) integrated gate driver module with pulse width modulation (PWM) over wi-fi to eliminate the need for low-voltage signals, (4) wireless power transfer (WPT)-enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state-of-health (SOH) estimator module. The entire architecture has been designed and built at the National Renewable Energy Laboratory (NREL) in Golden, CO.

Ga2O3 devices↗

DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities: Preprint

A wide range of utility applications require controllable switches with features such as high-voltage (HV) blocking and high-current carrying capacity especially at high pulse width modulation (PWM) frequency. Low and medium voltage utility applications such as motor drives and flexible AC transmission systems (FACTS) as well as solid state transformers (SST) could also benefit from a low-cost HV switching module. Wide band gap (WBG) semiconductors such as SiC and GaN MOSFETs are considered to be the present and next generation device choices, although they have their own limitations. For relatively HV applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low voltage regime. This manuscript proposes a new half bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in HV applications. Constructed from bare SiC dies, this half bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold and cooling, (3) integrated gate driver module with PWM over wi-fi to eliminate the need for low voltage signals, (4) wireless power transfer (WPT) enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state of health (SOH) estimator module onboard. The entire architecture has been designed and built at National Renewable Energy Laboratory (NREL), Golden, CO.

baseplate design↗

DOE OSTI2022

Thermal Optimization of a Silicon Carbide, Half-Bridge Power Module

This project describes the modeling process to design the packaging and heat exchanger for a half-bridge wide-bandgap (WBG) power semiconductor module. The module uses two silicon carbide, metal-oxide-semiconductor field-effect transistor (MOSFET) devices per switch position that are soldered to an aluminum nitride, direct-bond copper (DBC) substrate. A baseplate cooling configuration (e.g., no thermal grease) is used along with a water-ethylene glycol, jet-impingement-style heat exchanger. The heat exchanger was designed to be fabricated using prototyping equipment from the National Renewable Energy Laboratory, complies with automotive standards (for minimal channel sizes, flow rates, and coolant), and considers reliability aspects (i.e., erosion/corrosion). Device-scale computational fluid dynamics (CFD) is used first to design the slot jet impingement cooling configuration and compute the effective heat transfer coefficient (HTC) of the concept. The computed HTCs are then used as boundary conditions for a finite element study to optimize the package geometry (e.g., device layout and baseplate thickness) to minimize thermal resistance and minimize temperature variation between the module's four devices. Finally, a fluid manifold is designed to generate the slot jets and cool the devices. Module-scale CFD predicts a relatively low junction-to-fluid thermal resistance of 16.7 mm2 K/W, a 1.4 degrees C temperature variation between devices, and a total pressure drop of 5,860 Pa (0.85 psi) for the design. The thermal resistance of the module design is about 67% lower than the 2015 BMW i3 power electronics/modules thermal resistance.

DIRECT ENERGY CONVERSION↗

DOE OSTI2022

Optimizing Sensor Count and Placement to Detect Bond Wire Lift-Offs and Surface Defects in High-Power IGBT Modules Using Low-Cost Piezo-Electric Resonators

This manuscript presents the most recent results and findings to identify bond wire lift-offs and surface defects in high-power isolated gate bipolar junction transistor (IGBT) modules. The authors of this manuscript formerly proposed a low-cost, piezoelectric resonator-based measurement unit to detect bond wire related degradation in larger IGBT modules. Since high-power IGBT modules are expensive, it was apparent that evaluating our proposed method by inducing controlled damage to fresh (new) IGBTs may not be cost-effective especially when multiple sets of data need to be captured by inducing damage to different levels. In order to overcome this limitation, IGBT bond wires have been mimicked using a 3D printed enclosure, a PCB, and copper wires with dimensions very closely resembling a real IGBT. Using this method, multiple test devices can be built at the cost of a real IGBT, and the proposed technique could be fine-tuned without damaging expensive, real IGBTs. Our recent findings can be used to determine real IGBT degradation and bond wire lift-offs using only two sensors, as opposed to six transducers used in the first iteration of the setup. In addition to optimizing the sensor count, we have also identified the best possible locations of these sensors by attempting multiple placements inside the IGBT casing.

condition monitoring↗

DOE OSTI2019

Bond Wire Damage Detection and SOH Estimation of a Dual Pack IGBT Power Module using Active Power Cycling and Reflectometry

High thermal and electrical stress, over a period of time tends to cause deterioration of the health of power electronic switches. A huge fraction of research efforts involves the study of power electronic device reliability and development of novel techniques with higher accuracy in health estimation of such devices. Until today, no other existing techniques can determine the number of lifted bond wires and their locations in a live IGBT module. Through this paper, a new method for online condition monitoring of IGBTs and IGBT modules using SSTDR has been proposed. Unlike traditional methods, this research work concentrates at the gate terminals of the device instead of looking at the collector side. In addition, the RL-equivalent circuit to represent a bond wire has been developed for the DUT and simulated in CST Studio Suite to measure the reflection amplitudes. Both the experimental and simulation results have been compared. These results prove that a single measurement is sufficient to predict the failure of the device instead of looking at the traditional precursor parameter. With only two sets of measurements, it is possible to locate the aged device inside a module and detect the number of bond wire lift offs associated to that device.

30 DIRECT ENERGY CONVERSION↗

DOE OSTI2019

Bond Wire Damage Detection and State of Health Estimation of a 1200V, 900A Dual Pack IGBT Power Module using the RL-Equivalent Circuit

Electrical and environmental stresses are the two dominant contributors in aging and failure of power semiconductor devices. Insulated gate bipolar junction transistors (IGBTs) and metal-oxide semiconductor field effect transistors (MOSFETs) are two most commonly used switching devices in power converter circuits. A significant portion of research effort is given in inventing innovative methods to estimate the degradation and fatigue in these devices. Until today, no other existing techniques can determine the number of lifted bond wires and their locations in a live IGBT module, although this information is extremely helpful to understand the overall state of health of an IGBT power module. In this paper, we have proposed a reflectometry-based technique to overcome this hurdle. The RL-equivalent circuit to represent a bond wire has been developed for the device under test and simulated in CST Studio Suite to measure the reflection amplitudes. Experimental results were obtained using a prototype reflectometry hardware, and both the simulation and experimental results have been compared. These results prove that with these two sets of measurements, it is possible to locate the aged device inside a module and detect the number of bond wire lift-offs associated to that device.

30 DIRECT ENERGY CONVERSION↗

DOE OSTI2018

Distributed X-ray photon correlation spectroscopy data reduction using Hadoop MapReduce

Multi-speckle X-ray photon correlation spectroscopy (XPCS) is a powerful technique for characterizing the dynamic nature of complex materials over a range of time scales. XPCS has been successfully applied to study a wide range of systems. Recent developments in higher-frame-rate detectors, while aiding in the study of faster dynamical processes, creates large amounts of data that require parallel computational techniques to process in near real-time. Here, an implementation of the multi-tau and two-time autocorrelation algorithms using the Hadoop MapReduce framework for distributed computing is presented. In conclusion, the system scales well with regard to the increase in the data size, and has been serving the users of beamline 8-ID-I at the Advanced Photon Source for near real-time autocorrelations for the past five years.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗