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Khan, I. H.

Publications and source records attributed to Khan, I. H..

9 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

The effect of thermal exposure on the mechanical properties of aluminum-graphite composites

To promote the development of aluminum-graphite composites with improved properties for aerospace applications, composite samples were fabricated by solid-state diffusion bonding of liquid-phase Al-infiltrated Thornel 50 fibers, and their mechanical properties were measured at room temperature in the as-received condition, after temperature exposure and after thermal cycling. The interface structure in aluminum-graphite composites and its effect on the composite properties, the effect of thermal cycling on the tensile properties of the composites, and the characteristics of failures of the composites in tension is discussed. The studied composites exhibited tensile properties corresponding well with those predicted by the rule of mixtures. Thermal cycling between 20 C and 500 C, as well as the formation of the Al4C3 at the Al-graphite interfaces at temperatures above 500 C resulted in degradation of the composite strength. Scanning electron microscopy of fractured surfaces indicated that the relatively weak interface governs the mode of failure in tension.

Khan, I. H.↗
NASA NTRS1975

The effect of thermal exposure on the mechanical properties of aluminum-graphite composites

The mechanical properties of aluminum-graphite composites were measured at room temperature in the as-received condition, after elevated temperature exposure and after thermal cycling. The composites were fabricated by solid-state diffusion bonding of liquid-phase Al-infiltrated Thornel 50 fibers. The results showed that the maximum longitudinal tensile strength of the as-received material was 80,000 psi, which corresponds well with the rule of mixture value. The composite strength was observed to vary widely, depending on the extent of wetting of the fibers by the aluminum. The strength of the composites in the transverse direction was generally very low, due to poor interfacial bonding. Aluminum carbide (Al4C3) formed at the surface of the fibers at temperatures greater than 500 C. Development of the carbide was shown to be diffusion-controlled and was dependent on the time and temperature used. It was shown that the tensile strength was virtually unaffected by heat-treatment up to 500 C; beyond that temperature a drastic degradation of tensile strength occurred. Thermal cycling of the composites below 500 C resulted in an observable degradation of the composite strength.

Khan, I. H.↗
NASA NTRS1975

The surface structure of titanium and its interaction with bromine and chlorine

The surface structure and composition of titanium have been studied by electron diffraction and Auger electron spectroscopy in the temperature range 25 to 850 C. Atomically clean, well-defined Ti surfaces were obtained by a combination of argon ion sputtering and thermal treatment at 700 to 800 C. A series of surface superstructures was observed as the crystal temperature was gradually decreased. The development of the superstructures is best explained as due to surface reconstruction as a result of surface relaxation. The interaction of bromine and chlorine vapors with clean Ti surfaces was investigated in the temperature range 25 to 500 C. Bromine exposure at room temperature gave rise to an amorphous surface layer, which on annealing transformed into an epitaxial TiBr2 structure. Chlorine interaction resulted in the formation of an epitaxial TiCl3 on both cold and hot Ti surfaces. Surface impurities inhibited the chemical interaction process on the Ti surface.

Khan, I. H.↗
NASA NTRS1973

Surface segregation in titanium as monitored by Auger electron spectroscopy

Investigation of the surface diffusion and segregation of bulk impurities in titanium single crystals under well-defined and controlled experimental conditions. It is shown that an atomically clean titanium single-crystal surface can be obtained by argon ion bombardment within the temperature range from 700 to 800 C. It is demonstrated by Auger electron spectroscopy that, if such clean surfaces are subjected to thermal treatment, bulk impurities, especially sulfur, diffuse out to the crystal surface, and that the rate of surface segregation increases with increasing temperature.

Khan, I. H.↗
NASA NTRS1973

Low-temperature epitaxy of Ge films by sputter deposition.

It is shown experimentally that isoepitaxial growth of Ge films on Ge substrates can be obtained by dc sputtering at substrate temperatures as low as 100 C. The crystallographic structure and orientation of the films are strongly influenced by such deposition parameters as substrate temperature, growth rate, surface contamination, and sputtering-gas purity. The amorphous-polycrystalline transition occurs between 110 and 115 C, while the polycrystalline-single crystalline transition occurs at roughly 140 C. The crystallographic order increases with increasing substrate temperature.

Khan, I. H.↗