Engineering topics
Publications and source records attributed to Khattak, C. P..
Multiblade cutter slices silicon ingots into solar-cell wafers quickly and with little waste. Speed and blade pressure ensure high wafer-production rate. Lightweight, balanced construction minimizes blade vibration and reduces sideways motion that would otherwise widen kerf and waste silicon.
Several areas of silicon sheet growth development are addressed including: silicon ingot casting, heat exchanger method, multiwire slicing, and fixed abrasive slicing technique.
One of the major cost factors in silicon ingot technology adaptation for terrestrial photovoltaic application is in slicing boules into wafers. The most developed industrial practice is the Internal Diameter (ID) slicing. This method utilizes diamond cutting. The diamond stands up for long periods, hence, the cost of expendable materials is low. However, the ID technology as practiced today has poor material utilization. The Multiblade Slurry (MBS) method has low equipment and labor costs but its expendable material costs are high. Recently Multiwire Slurry (MWS) technology has shown very good material utilization, but its expendable material costs are even higher than MBS. The multiwire Fixed Abrasive Slicing Technique (FAST) still in advanced development stage, combines the low expendable material costs of ID method, the low labor and equipment costs of MBS and high material utilization of MWS.
The most developed process for silicon crystal growth is the Czochralski (CZ) method which was in production for over two decades. In an effort to reduce cost of single crystal silicon for photovoltaic applications, a directional solidification technique, Heat Exchanger Method (HEM), was adapted. Materials used in HEM and CZ furnaces are quite similar (heaters, crucibles, insulation, etc.). To eliminate the cost of high purity argon, it was intended to use vacuum operation in HEM. Two of the major problems encountered in vacuum processing of silicon are crucible decomposition and silicon carbide formation in the melt.
A main source of high carbon levels in silicon crystals grown from melt under reduced pressures and contained in silica crucibles supported by graphite retainer/susceptor was identified by thermodynamic analysis. The calculations were verified by experimental results and the carbon level is reduced by approximately 50% with the use of molybdenum retainers.
Commercially available metallurgical grade (MG) silicon has high B and P content which is not reduced significantly by directional solidification. By choosing high purity raw materials for an experimental Submerged Electrode Arc Furnace, most of the impurities are reduced to 10 ppmw. Directional solidification of upgraded metallurgical grade (UMG) silicon by the Heat Exchanger Method (HEM) has produced 16 cm x 16 cm cross section ingots with nearly single crystal structure. The main problem encountered during directional solidification was SiC impurities dispersed through the structure. Solar cells fabricated from UMG silicon that was directionally solidified twice by HEM have shown up to 12.33% (am1) conversion efficiency.
Large crystals of silicon are grown from melt, in either vacuum or pressurized atmosphere, without moving crucible, furnace, or anything else. Seed crystal is mounted on helium-cooled heat exchanger, which prevents seed from melting when furnace melts rest of silicon material in crucible; heat exchanger draws off heat from melt so that a solid ingot grows outward from seed in a regular crystal structure. Bottom of crucible is insulated so that heat exchanger cools only seed.
Formation of carbon monoxide gas is prevented by a linear of refractory material free of elemental carbon. For pressures above about 4 torr, silicon carbide can be used as refractory liner. The problem of carbide contamination can arise in crystal growth of any material that forms a carbide more stable than carbon monoxide. Prevention in such cases is possible by using noncarbon refractories in place of graphite.
A low cost, effective slicing method is essential to make ingot technology viable for photovoltaics in terrestrial applications. The fixed abrasive slicing technique (FAST) combines the advantages of the three commercially developed techniques. In its development stage FAST demonstrated cutting effectiveness of 10 cm and 15 cm diameter workpieces. Wire blade development is still the critical element for commercialization of FAST technology. Both impregnated and electroplated wire blades have been developed; techniques have been developed to fix diamonds only in the cutting edge of the wire. Electroplated wires show the most near term promise and this approach is emphasized. With plated wires it has been possible to control the size and shape of the electroplating, it is expected that this feature reduces kerf and prolongs the life of the wirepack.
The fixed abrasive slicing technique (FAST) was developed to slice silicon ingots more effectively. It was demonstrated that 25 wafers/cm can be sliced from 10 cm diameter and 19 wafers/cm from 15 cm diameter ingots. This was achieved with a combination of machine development and wire-blade development programs. Correlation was established between cutting effectiveness and high surface speeds. A high speed slicer was designed and fabricated for FAST slicing. Wirepack life of slicing three 10 cm diameter ingots was established. Electroforming techniques were developed to control widths and prolong life of wire-blades. Economic analysis indicates that the projected add-on price of FAST slicing is compatible with the DOE price allocation to meet the 1986 cost goals.
Slicing is an important processing step for all technologies based on the use of ingots. A comparison of the economics of three slicing techniques shows that the fixed abrasive slicing technique (FAST) is superior to the internal diameter (ID) and the multiblade slurry (MBS) techniques. Factors affecting contact length are discussed, taking into account kerf width, rocking angle, ingot size, and surface speed. Aspects of blade development are also considered. A high concentration of diamonds on wire has been obtained in wire packs usd for FAST slicing. The material removal rate was found to be directly proportional to the pressure at the diamond tips.
The Heat Exchanger Method (HEM) is a promising low-cost ingot casting process for material used for solar cells. This is the only method that is capable of casting single crystal ingots with a square cross section using a directional solidification technique. This paper describes the chemical, mechanical and electrical properties of the HEM silicon material as a function of position within the ingot.
The conversion of polycrystalline silicon to sheet form (the wafers produced are 10 cm x 10 cm cross section with minimum surface damage) by the Heat Exchanger Method (HEM) and multi-wire Fixed Abrasive Slicing Technique (FAST), as a means of reducing the cost of solar arrays for adaptation of photovoltaic technology for terrestrial applications, is given. A schematic of a HEM furnace, which includes a silica crucible, and developments in the HEM process are presented. A new machine for slicing with wire was designed and fabricated. The high-speed slicer has been used to slice 19 wafers per cm from 10 cm diameter crystals. Both HEM and FAST are low-cost processes and they have the potential of giving one of the lowest add-on costs ($6.24 and $6.48 per square meter of sheet respectively, with the combination add-on cost of $14.87 per square meter) of this conversion.
Ingot casting was scaled up to 16 cm by 16 cm square cross section size and ingots weighing up to 8.1 kg were cast. The high degree of crystallinity was maintained in the large ingot. For large sizes, the nonuniformity of heat treatment causes chipping of the surface of the ingot. Progress was made in the development of a uniform graded structure in the silica crucibles. The high speed slicer blade-head weight was reduced to 37 pounds, allowing surface speeds of up to 500 feet per minute. Slicing of 10 cm diameter workpieces at these speeds increased the through-put of the machine to 0.145 mm/min.
Several 20 cm diameter silicon ingots, up to 6.3 kg. were cast with good crystallinity. The graphite heat zone can be purified by heating it to high temperatures in vacuum. This is important in reducing costs and purification of large parts. Electroplated wires with 45 um synthetic diamonds and 30 um natural diamonds showed good cutting efficiency and lifetime. During slicing of a 10 cm x 10 cm workpiece, jerky motion occurred in the feed and rocking mechanisms. This problem is corrected and modifications were made to reduce the weight of the bladeheat by 50%.
In the area of ingot casting the proof of concept of heat exchanger method (HEM) was established. It was also established that HEM cast silicon yielded solar cell performance comparable to Czochralski grown material. Solar cells with conversion efficiencies of up to 15% were fabricated. It was shown that square cross-section ingots can be cast. In the area of crystal slicing, it was established that silicon can be sliced efficiently with the fixed abrasive slicing technique approach. This concept was carried forward to 10 cm diameter workpiece.
The paper describes the heat exchanger method (HEM) for growing silicon crystals. The problem of ingot cracking was solved by using a graded structure silica crucible, and vacuum processing eliminated expensive high-purity argon. Solar cells fabricated from HEM silicon demonstrated conversion efficiencies up to 15% (AM1) at low cost, using square cross-section, single crystal silicon. A modified multiblade slurry machine was adapted for multiwire fixed abrasive slicing of silicon which uses a diamond attached to wires; this method provides a conversion ratio of 1.08 sq m of wafer per kg of silicon ingot, and produces wafers free of edge chipping with a surface damage of 3-5 microns.
Solar cells fabricated from HEM cast silicon yielded up to 15% conversion efficiencies. This was achieved in spite of using unpurified graphite parts in the HEM furnace and without optimization of material or cell processing parameters. Molybdenum retainers prevented SiC formation and reduced carbon content by 50%. The oxygen content of vacuum cast HEM silicon is lower than typical Czochralski grown silicon. Impregnation of 45 micrometers diamonds into 7.5 micrometers copper sheath showed distortion of the copper layer. However, 12.5 micrometers and 15 micrometers copper sheath can be impregnated with 45 micrometers diamonds to a high concentration. Electroless nickel plating of wires impregnated only in the cutting edge showed nickel concentration around the diamonds. This has the possibility of reducing kerf. The high speed slicer fabricated can achieve higher speed and longer stroke with vibration isolation.