Engineering topics

Kim, C.

Publications and source records attributed to Kim, C..

5 records

DOE OSTI2024

Unraveling the electronic structure and magnetic transition evolution across monolayer, bilayer, and multilayer ferromagnetic Fe 3 GeTe 2

Two-dimensional (2D) van der Waals (vdW) magnets have sparked widespread attention due to their potential in spintronic applications as well as in fundamental physics. Ferromagnetic vdW compound Fe 3 GeTe 2 (FGT) and its Ga variants have garnered significant interest due to their itinerant magnetism, correlated states, and high magnetic transition temperature. Experimental studies have demonstrated the tunability of FGT’s Curie temperature, T C , through adjustments in quintuple layer numbers (QL) and carrier concentrations, n. However, the underlying mechanism remains elusive. In this study, we employ molecular beam epitaxy (MBE) to synthesize 2D FGT films down to 1 QL with precise layer control, facilitating an exploration of the band structure and the evolution of itinerant carrier density. Angle-resolved photoemission spectroscopy (ARPES) reveals significant band structure changes at the ultra-thin limit, while first-principles calculations elucidate the band evolution from 1 QL to bulk, largely governed by interlayer coupling. Additionally, we find that n is intrinsically linked to the number of QL and temperature, with a critical value triggering the magnetic phase transition. Our findings underscore the pivotal role of band structure and itinerant electrons in governing magnetic phase transitions in such 2D vdW magnetic materials.

36 MATERIALS SCIENCE↗

NASA NTRS1983

Modified jet noise source model for twin-jet shielding analysis

An analytical method to estimate the influence that a jet of heated flow has on the noise emission from a parallel jet is presented. The shielding jet is modelled as a cylinder of constant cross-section in which the flow speed and temperature are uniform throughout. The jet noise emission is modelled by a point source with directivity imposed. The directivity term consists of: a self-noise term, a shear-noise term, and a convection factor. The self- and shear-noise terms each contain a basic directivity factor multiplying a spectral shape function. The various components are evaluated based on comparison with isothermal jet radiation experimental data. The modified source term is incorporated into the jet shielding model and compared to heated twin jet shielding data. The estimated spectra agree well except further downstream of the nozzle where peak of the noise spectrum estimated by the model lies approximately one octave below the experimental peak. The noise reduction estimated by the model agrees favorably with experiment in the near downstream region. This discrepancy is explained in terms of the shielding mechanism which is dominant far downstream.

Gerhold, C. H.↗

NASA NTRS1974

Arterial pulse wave pressure transducer

An arterial pulse wave pressure transducer is introduced. The transducer is comprised of a fluid filled cavity having a flexible membrane disposed over the cavity and adapted to be placed on the skin over an artery. An arterial pulse wave creates pressure pulses in the fluid which are transduced, by a pressure sensitive transistor in direct contact with the fluid, into an electric signal. The electrical signal is representative of the pulse waves and can be recorded so as to monitor changes in the elasticity of the arterial walls.

Kim, C.↗

NASA NTRS1973

An economical arterial-pulse-wave transducer

Transducer records arterial pulses externally. Device uses thin plastic membrane which is fluid coupled to pressure sensitive transistor. Transistor is connected to amplifier which, in turn, is connected to recorder. End section is threaded to accept suitable holder and contains pressure relief vent allowing transistor to sense only pressure levels greater than atmospheric.

Kim, C.↗

NASA NTRS1970

Current conduction in junction gate field effect transistors

The internal physical mechanism that governs the current conduction in junction-gate field effect transistors is studied. A numerical method of analyzing the devices with different length-to-width ratios and doping profiles is developed. This method takes into account the two dimensional character of the electric field and the field dependent mobility. Application of the method to various device models shows that the channel width and the carrier concentration in the conductive channel decrease with increasing drain-to-source voltage for conventional devices. It also shows larger differential drain conductances for shorter devices when the drift velocity is not saturated. The interaction of the source and the drain gives the carrier accumulation in the channel which leads to the space-charge-limited current flow. The important parameters for the space-charge-limited current flow are found to be the L/L sub DE ratio and the crossover voltage.

Kim, C.↗