Engineering topics

Kim, Jae H.

Publications and source records attributed to Kim, Jae H..

8 records

NASA NTRS1993

GaAs-based optoelectronic neurons

An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold.

Lin, Steven H.↗

NASA NTRS1992

Quantum well, beam deflecting surface emitting lasers

This invention relates to surface emitting semiconductor lasers (SELs), with integrated 45 deg. beam deflectors. A SEL is formed on a wafer including vertical mirrors and 45 deg. beam deflectors formed in grooves by tilted ion beam etching. A SEL is a lattice matched, or unstrained, AlGaAs/GaAs GRINSCH SQW SEL. An alternate embodiment is shown, in which a SEL is lattice mismatched, strained or pseudomorphic, or InGaAs/AlGaAs GRINSCH SQW SEL which emits radiation at a wavelength to which its substrate is transparent. Both SELs exhibit high output power, low threshold current density, and relatively high efficiency, and each are processing compatible with conventional large scale integration technology. Such SELs may be fabricated in large numbers from single wafers. The novel features of this invention include the use of tilted ion beam etching to form a pair of grooves each including vertical mirrors and 45 deg. beam deflectors. The embodiment provides substantial circuit design flexibility because radiation may be coupled both up and/or down through the substrate.

Kim, Jae H.↗

NASA NTRS1992

AlxGa1-xAs Single-Quantum-Well Surface-Emitting Lasers

Surface-emitting solid-state laser contains edge-emitting Al0.08Ga0.92As single-quantum-well (SQW) active layer sandwiched between graded-index-of-refraction separate-confinement-heterostructure (GRINSCH) layers of AlxGa1-xAs, includes etched 90 degree mirrors and 45 degree facets to direct edge-emitted beam perpendicular to top surface. Laser resembles those described in "Pseudomorphic-InxGa1-xAs Surface-Emitting Lasers" (NPO-18243). Suitable for incorporation into optoelectronic integrated circuits for photonic computing; e.g., optoelectronic neural networks.

Kim, Jae H.↗

NASA NTRS1992

GaAs Optoelectronic Integrated-Circuit Neurons

Monolithic GaAs optoelectronic integrated circuits developed for use as artificial neurons. Neural-network computer contains planar arrays of optoelectronic neurons, and variable synaptic connections between neurons effected by diffraction of light from volume hologram in photorefractive material. Basic principles of neural-network computers explained more fully in "Optoelectronic Integrated Circuits For Neural Networks" (NPO-17652). In present circuits, devices replaced by metal/semiconductor field effect transistors (MESFET's), which consume less power.

Lin, Steven H.↗

NASA NTRS1992

Pseudomorphic InxGa1-xAs Surface-Emitting Lasers

Solid-state lasers of new type contain pseudomorphic In0.15Ga0.85As single-quantum-well (SQW) active layers sandwiched between thinner layers of GaAs that, in turn, are sandwiched between graded-index-of-refraction separate-confinement-heterostructure (GRINSCH) layers of AlxGa1-xAs. Lasers emit edgewise as other solid-state lasers, or made to emit perpendicularly to their surfaces by use of integrated 45 degree beam deflectors that deflect edge-emitted light. Suitable for incorporation into optoelectronic integrated circuits implementing optical interconnection and parallel processing of data.

Kim, Jae H.↗

NASA NTRS1991

Control of large flexible structures - An experiment on the NASA Mini-Mast facility

The output variance constraint controller design procedure is integrated with model reduction by modal cost analysis. A procedure is given for tuning MIMO controller designs to find the maximal rms performance of the actual system. Controller designs based on a finite-element model of the system are compared with controller designs based on an identified model (obtained using the Q-Markov Cover algorithm). The identified model and the finite-element model led to similar closed-loop performance, when tested in the Mini-Mast facility at NASA Langley.

Hsieh, Chen↗

NASA NTRS1991

High-gain AlGaAs/GaAs double heterojunction Darlington phototransistors for optical neural networks

High-gain MOCVD-grown (metal-organic chemical vapor deposition) AlGaAs/GaAs/AlGaAs n-p-n double heterojunction bipolar transistors (DHBTs) and Darlington phototransistor pairs are provided for use in optical neural networks and other optoelectronic integrated circuit applications. The reduced base doping level used results in effective blockage of Zn out-diffusion, enabling a current gain of 500, higher than most previously reported values for Zn-diffused-base DHBTs. Darlington phototransitor pairs of this material can achieve a current gain of over 6000, which satisfies the gain requirement for optical neural network designs, which advantageously may employ neurons comprising the Darlington phototransistor pairs in series with a light source.

Kim, Jae H.↗

NASA NTRS1990

Model reduction by weighted Component Cost Analysis

Component Cost Analysis considers any given system driven by a white noise process as an interconnection of different components, and assigns a metric called 'component cost' to each component. These component costs measure the contribution of each component to a predefined quadratic cost function. A reduced-order model of the given system may be obtained by deleting those components that have the smallest component costs. The theory of Component Cost Analysis is extended to include finite-bandwidth colored noises. The results also apply when actuators have dynamics of their own. Closed-form analytical expressions of component costs are also derived for a mechanical system described by its modal data. This is very useful to compute the modal costs of very high order systems. A numerical example for MINIMAST system is presented.

Kim, Jae H.↗