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Kim, Jeongwoo

Publications and source records attributed to Kim, Jeongwoo.

Enhanced Electron Correlation and Significantly Suppressed Thermal Conductivity in Dirac Nodal-Line Metal Nanowires by Chemical Doping

Enhancing electron correlation in a weakly interacting topological system has great potential to promote correlated topological states of matter with extraordinary quantum properties. Here, the enhancement of electron correlation in a prototypical topological metal, namely iridium dioxide (IrO 2 ), via doping with 3d transition metal vanadium is demonstrated. Single-crystalline vanadium-doped IrO 2 nanowires are synthesized through chemical vapor deposition where the nanowire yield and morphology are improved by creating rough surfaces on substrates. Vanadium doping leads to a dramatic decrease in Raman intensity without notable peak broadening, signifying the enhancement of electron correlation. The enhanced electron correlation is further evidenced by transport studies where the electrical resistivity is greatly increased and follows an unusual $\sqrt{T}$ dependence on the temperature (T). The lattice thermal conductivity is suppressed by an order of magnitude via doping even at room temperature where phonon-impurity scattering becomes less important. Density functional theory calculations suggest that the remarkable reduction of thermal conductivity arises from the complex phonon dispersion and reduced energy gap between phonon branches, which greatly enhances phase space for phonon–phonon Umklapp scattering. This work demonstrates a unique system combining 3d and 5d transition metals in isostructural materials to enrich the system with various types of interactions.

36 MATERIALS SCIENCE↗

Selective thermal neutron transmutation doping with Gd masks in GaN semiconductors

For the first time, selective neutron transmutation doping was successfully performed on GaN through Gd masks, showing the feasibility of patternable doping through neutron irradiations. In collaborating with Oak Ridge National Laboratory, GaN with Gd masks was irradiated by directional neutrons. By using the Gd properties with high neutron absorption cross-sections, it was confirmed that the area covered by Gd masks on GaN was completely shielded from neutrons, and the uncovered area was doped with the generated Ge and 14 C. Property differences were clearly identified in various ways when comparing the area exposed by neutrons and the area unexposed by neutrons. The discoloration by the ejected protons and elastic scattering of neutrons appeared only in the exposed area while the unexposed area remained the same as before irradiation. The aspect ratio of the patterned profile of GaN was estimated by comparing patterns on the front and backside. From energy dispersive X-ray spectroscopy spectra and secondary ion mass spectrometry measurement, the concentration difference between Ge and 14 C as well as the exact concentration of produced 14 C was also checked. Further, Schottky barrier diodes on the selectively doped GaN were fabricated and investigated to study the electrical properties.

42 ENGINEERING↗

Magnetizing topological surface states of Bi 2 Se 3 with a CrI 3 monolayer

To magnetize surfaces of topological insulators without damaging their topological feature is a crucial step for the realization of the quantum anomalous Hall effect (QAHE) and remains as a challenging task. Through density functional calculations, we found that adsorption of a semiconducting two-dimensional van der Waals (2D-vdW) ferromagnetic CrI 3 monolayer can create a sizable spin splitting at the Dirac point of the topological surface states of Bi 2 Se 3 films. Furthermore, general rules that connect different quantum and topological parameters are established through model analyses. This work provides a useful guideline for the realization of QAHE at high temperatures in heterostructures of 2D-vdW magnetic monolayers and topological insulators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spin diffusion length and spin Hall angle in Pd 1– x Pt x /YIG heterostructures: Examination of spin relaxation mechanism

The thickness, temperature, and composition studies of spin diffusion length (SDL) and spin Hall angle (SHA) are performed by measuring the spin Hall magnetoresistance in Pd 1–x Pt x /Y 3 Fe 5 O 12 (=YIG) heterostructures. The SDL is found to be invariant to changes in the electron momentum relaxation time by varying the temperature, the normal metal (NM) thickness, or the alloy composition, while the SHA exhibits a nonmonotonic dependence on temperature. These findings suggest the appearance of D'yakonov-Perel' spin relaxation mechanism and phonon skew scattering in our heterostructures that is associated with strong interfacial Rashba spin-orbit coupling (IRSOC). At last, we employ the ab initio calculations to quantify the IRSOC at the inversion-symmetry-broken NM/YIG interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗