Engineering topics

Kim, Jinwoong

Publications and source records attributed to Kim, Jinwoong.

5 records

DOE OSTI2024

Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn 3 , sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Magnetochiral tunneling in paramagnetic Co 1/3 NbS 2

Electric currents have the intriguing ability to induce magnetization in nonmagnetic crystals with sufficiently low crystallographic symmetry. Some associated phenomena include the non-linear anomalous Hall effect in polar crystals and the nonreciprocal directional dichroism in chiral crystals when magnetic fields are applied. In this work, we demonstrate that the same underlying physics is also manifested in the electronic tunneling process between the surface of a nonmagnetic chiral material and a magnetized scanning probe. In the paramagnetic but chiral metallic compound Co 1/3 NbS 2 , the magnetization induced by the tunneling current is shown to become detectable by its coupling to the magnetization of the tip itself. This results in a contrast across different chiral domains, achieving atomic-scale spatial resolution of structural chirality. To support the proposed mechanism, we used first-principles theory to compute the chirality-dependent current-induced magnetization and Berry curvature in the bulk of the material. Our demonstration of this magnetochiral tunneling effect opens up an avenue for investigating atomic-scale variations in the local crystallographic symmetry and electronic structure across the structural domain boundaries of low-symmetry nonmagnetic crystals.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Integer quantum Hall effect and enhanced g factor in quantum-confined Cd 3 As 2 films

Here, we investigate the integer quantum Hall effect in Cd 3 ⁢As 2 thin films under conditions of strong to moderate quantum confinement (thicknesses of 10, 12, and 15 nm). In all the films, we observe the integer quantum Hall effect in the spin-polarized lowest Landau level (filling factor v = 1) and at spin-degenerate higher index Landau levels with even filling factors (v = 2,4,6). With increasing quantum confinement, we also observe a lifting of the Landau-level spin degeneracy at v = 3, manifest as the emergence of an anomaly in the longitudinal and Hall resistivities. Tight-binding calculations show that the enhanced g factor likely arises from a combination of quantum confinement and corrections from nearby subbands.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Direct Visualization of Surface Spin-Flip Transition in MnBi 4 Te 7

Here, we report direct visualization of spin-flip transition of the surface layer in antiferromagnet MnBi 4 Te 7 , a natural superlattice of alternating MnBi 2 Te 4 and Bi 2 Te 3 layers, using cryogenic magnetic force microscopy (MFM). The observation of magnetic contrast across domain walls and step edges confirms that the antiferromagnetic order persists to the surface layers. The magnetic field dependence of the MFM images reveals that the surface magnetic layer undergoes a first-order spin-flip transition at a magnetic field that is lower than the bulk transition, in excellent agreement with a revised Mills model. Our analysis suggests no reduction of the order parameter in the surface magnetic layer, implying robust ferromagnetism in the single-layer limit. The direct visualization of surface spin-flip transition not only opens up exploration of surface metamagnetic transitions in layered antiferromagnets, but also provides experimental support for realizing quantized transport in ultrathin films of MnBi 4 Te 7 and other natural superlattice topological magnets.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Robust A -Type Order and Spin-Flop Transition on the Surface of the Antiferromagnetic Topological Insulator MnBi 2 Te 4

Here, we present microscopic evidence of the persistence of uniaxial A-type antiferromagnetic order to the surface layers of MnBi 2 Te 4 single crystals using magnetic force microscopy. Our results reveal termination-dependent magnetic contrast across both surface step edges and domain walls, which can be screened by thin layers of soft magnetism. The robust surface A-type order is further corroborated by the observation of termination-dependent surface spin-flop transitions, which have been theoretically proposed decades ago. Our results not only provide key ingredients for understanding the electronic properties of the antiferromagnetic topological insulator MnBi 2 Te 4 , but also open a new paradigm for exploring intrinsic surface metamagnetic transitions in natural antiferromagnets.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗