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Kim, Kab‐Jin

Publications and source records attributed to Kim, Kab‐Jin.

Direct Observation of Room–Temperature Magnetic Skyrmion Motion Driven by Ultra–Low Current Density in Van Der Waals Ferromagnets

The recent discovery of room-temperature ferromagnetism in 2D van der Waals (vdW) materials, such as Fe 3 GaTe 2 (FGaT), has garnered significant interest in offering a robust platform for 2D spintronic applications. Various fundamental operations essential for the realization of 2D spintronics devices are experimentally confirmed using these materials at room temperature, such as current-induced magnetization switching or tunneling magnetoresistance. Nevertheless, the potential applications of magnetic skyrmions in FGaT systems at room temperature remain unexplored. In this work, the current-induced generation of magnetic skyrmions in FGaT flakes employing high-resolution magnetic transmission soft X-ray microscopy is introduced, supported by a feasible mechanism based on thermal effects. Furthermore, direct observation of the current-induced magnetic skyrmion motion at room temperature in FGaT flakes is presented with ultra-low threshold current density. This work highlights the potential of FGaT as a foundation for room-temperature-operating 2D skyrmion device applications.

2D ferromagnets↗

Deterministic Current–Induced Perpendicular Switching in Epitaxial Co/Pt Layers without an External Field

Current–induced spin–orbit torques (SOTs) have emerged as a powerful tool to control magnetic elements and non–uniform magnetic textures such as domain walls and skyrmions. SOT–induced switching of perpendicular magnetization generally requires an external field to break the rotational symmetry of the spin–orbit effective fields responsible for the deterministic reversal. The proposed mechanisms to eliminate this requirement often rely on complex multilayer structures that necessitate laborious optimization in the material and spin transport properties, making them less attractive for applications. Herein, current–induced, external field–free switching of an epitaxial MgO/Pt/Co trilayer with an extremely large perpendicular anisotropy in excess of 3 Tesla is reported. It is found that switching occurs due to the interplay of strong SOTs, local anisotropy fluctuations, and the Dzyaloshinkii–Moriya interaction inherent to this epitaxial system. Finally, given that these layers constitute the base stack of a magnetic tunnel junction, this switching mechanism offers the most technologically viable path toward devices such as field–free SOT–based magnetic random–access memories.

36 MATERIALS SCIENCE↗