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Kim, N. P.

Publications and source records attributed to Kim, N. P..

GaAs (AlGaAs)/CuInSe2 tandem solar cells. Technology status and future directions

Mechanically stacked, high efficiency, lightweight, and radiation resistant photovoltaic cells based on a GaAs thin film top and CuInSe2 thin film bottom cells were developed, and are considered one of the most promising devices for planar solar array applications. The highest efficiency demonstrated so far using the 4 sq cm design is 23.1 pct. AM0, one sun efficiency when measured in four-terminal configuration. The current status of the GaAs(AlGaAs)/CuInSe2 tandem cell program is presented and future directions that will lead to cell efficiencies higher than 26 pct. Air Mass Zero (AM0). A new 8 sq cm cell design developed for a two terminal and voltage matched configuration to minimize wiring complexity is discussed. Optimization of the GaAs structure for a higher end-of-life performance and further improvement of tandem cells by utilizing AlGaAs as an top absorber are described. Results of environmental tests conducted with these thin film GaAs/CuInSe2 tandem cells are also summarized.

Kim, N. P.↗

Progress in GaAs/CuInSe2 tandem junction solar cells

Much more power is required for spacecraft of the future than current vehicles. To meet this increased demand for power while simultaneously meeting other requirements for launch, deployment, and maneuverability, the development of higher-efficiency, lighter-weight, and more radiation resistant photovoltaic cells is essential. Mechanically stacked tandem junction solar cells based on (AlGaAs)GaAs thin film CLEFT (Cleavage of Lateral Epitaxial Film for Transfer) top cells and CuInSe2(CIS) thin film bottom cells are being developed to meet these power needs. The mechanically stacked tandem configuration is chosen due to its interconnect flexibility allowing more efficient array level performance. It also eliminates cell fabrication processing constraints associated with monolithically integrated multi-junction approaches, thus producing higher cell fabrication yields. The GaAs cell is used as the top cell due to its demonstrated high efficiency, and good radiation resistance. Furthermore, it offers a future potential for bandgap tuning using AlGaAs as the absorber to maximize cell performance. The CuInSe2 cell is used as the bottom cell due to superb radiation resistance, stability, and optimal bandgap value in combination with an AlGaAs top cell. Since both cells are incorporated as thin films, this approach provides a potential for very high specific power. This high specific power (W/kg), combined with high power density (W/sq m) resulting from the high efficiency of this approach, makes these cells ideally suited for various space applications.

Kim, N. P.↗