Serum-Stable and Selective Backbone-N-Methylated Cyclic Peptides That Inhibit Prokaryotic Glycolytic
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van Neer, R.H.P.↗
Engineering topics
Kimura, H.
Publications and source records attributed to Kimura, H..
On the pilot's behavior of detecting a system parameter change
The reaction of a human pilot, engaged in compensatory control, to a sudden change in the controlled element's characteristics is described. Taking the case where the change manifests itself as a variance change of the monitored signal, it is shown that the detection time, defined to be the time elapsed until the pilot detects the change, is related to the monitored signal and its derivative. Then, the detection behavior is modeled by an optimal controller, an optimal estimator, and a variance-ratio test mechanism that is performed for the monitored signal and its derivative. Results of a digital simulation show that the pilot's detection behavior can be well represented by the model proposed here.
Morizumi, N.↗
High purith low defect FZ silicon
The most common intrinsic defects in dislocation-free float zone (FZ) silicon crystals are the A- and B-type swirl defects. The mechanisms of their formation and annihilation have been extensively studied. Another type of defect in dislocation-free FZ crystals is referred to as a D-type defect. Concentrations of these defects can be minimized by optimizing the growth conditions, and the residual swirls can be reduced by the post-growth extrinsic gettering process. Czochralski (Cz) silicon wafers are known to exhibit higher resistance to slip and warpage due to thermal stress than do FZ wafers. The Cz crystals containing dislocations are more resistant to dislocation movement than dislocated FZ crystals because of the locking of dislocations by oxygen atoms present in the Cz crystals. Recently a transverse magnetic field was applied during the FZ growth of extrinsic silicon. Resultant flow patterns, as revealed by striation etching and spreading resistance in Ga-doped silicon crystals, indicate strong effects of the transverse magnetic field on the circulation within the melt. At fields of 5500 gauss, the fluid flow in the melt volume is so altered as to affect the morphology of the growing crystal.
Kimura, H.↗