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NASA NTRS2011

Control Program and Optical Improvements of Fresnel Microspectrometer

A microspectrometer has a circular geometry, and is designed with the Fresnel diffraction equation. This enables a dramatic miniaturization of the optical parts of a spectrometer over 100 times by volume. Therefore, it enables the construction of spectrometer arrays such as 100X100 microspectrometers for tunable multispectral or hyper-spectral imaging. It can be used for a massive, simultaneous spectral scan from multiple optical sources such as 10,000 optical fibers.

Park, Yeonjoon↗

NASA NTRS2010

SUB 1-Millimeter Size Fresnel Micro Spectrometer

An ultra-small micro spectrometer with less than 1mm diameter was constructed using Fresnel diffraction. The fabricated spectrometer has a diameter of 750 nmicrometers and a focal length of 2.4 mm at 533nm wavelength. The micro spectrometer was built with a simple negative zone plate that has an opaque center with an ecliptic shadow to remove the zero-order direct beam to the aperture slit. Unlike conventional approaches, the detailed optical calculation indicates that the ideal spectral resolution and resolving power do not depend on the miniaturized size but only on the total number of rings. We calculated 2D and 3D photon distribution around the aperture slit and confirmed that improved micro-spectrometers below 1mm size can be built with Fresnel diffraction. The comparison between mathematical simulation and measured data demonstrates the theoretical resolution, measured performance, misalignment effect, and improvement for the sub-1mm Fresnel micro-spectrometer. We suggest the utilization of an array of micro spectrometers for tunable multi-spectral imaging in the ultra violet range.

Park, Yeonjoon↗

NASA NTRS2009

Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than plus or minus 10 deg.) sapphire (0001) substrate can be used to improve epitaxial relationships better by providing attractive atomic steps in the epitaxial process.

Choi, Sang↗