Engineering topics

Kisslinger, Kim

Publications and source records attributed to Kisslinger, Kim.

At least 55 records · Page 3

DOE OSTI2023

High‐Nickel Heterostructured Cathodes with Local Stoichiometry Control for High‐Voltage Operation

The growing demand for lithium‐ion batteries to power electric vehicles and other energy‐dense devices continues to fuel the need for cathodes of increasingly higher nickel in cathodes. The relentless pursuit of high Ni content, however, raises concerns on compromising cell lifetime and safety, especially under high‐voltage operation. Alternative to the traditional design of uniform or core–shell composition, we report a rational control of local stoichiometry in high‐Ni cathodes, enabling their high thermal and cycling stabilities—up to 258 °C at the fully charged state and 91.4% capacity retention for 100 cycles between 2.7 and 4.4 V. Multimodal synchrotron X‐ray characterization unveils the heterostructure of secondary particles, featuring a high‐Ni core (LiNi 0.90 Mn 0.05 Co 0.05 O 2 ) covered by a thin Ni‐gradient layer that remains stable over prolonged cycling due to suppressed oxygen release and structural deterioration. This work underlines, the intricate interplay between local stoichiometry and redox reactions in stabilizing high‐Ni cathodes for high‐voltage operation while ensuring safety.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Improving charge transport in integrated MoO 3 /C electrode materials for water-in-salt energy storage systems by incorporating oxygen vacancies

Improvements in the charge storage properties of α-MoO 3 used as an electrode with a 30m ZnCl 2 water-in-salt electrolyte have been achieved by enhancements in electron and ion transport enabled by an inventive synthesis route. Electron transport was improved through the integration of MoO 3 with dopamine-derived carbon via a chemical preintercalation route, and enhanced ion transport was achieved by incorporating oxygen vacancies in MoO 3 structure through ethanol 2 reduction under hydrothermal conditions. Here, the presence of carbon was confirmed by corresponding D and G bands observed in Raman spectroscopy measurements. The presence of oxygen vacancies was proven through correlated XPS, TGA, Raman spectroscopy and XRD analyses, with the introduction of oxygen vacancies leading to an expanded interlayer region. Four-point probe measurements provided evidence of increased electronic conductivity due to the incorporation of carbon, and cyclic voltammetry-based charge storage mechanism analyses revealed increases in ion transport kinetics due to oxygen vacancy formation. Tuning the oxygen vacancy concentration is critical, as excessive concentrations of these point defects leads to structural instability and poor capacity retention. This work demonstrates the combined potential of carbon and oxygen vacancies in moderate concentrations to enhance the charge storage properties of transition metal oxides. The strategies developed in this study offer a path to the development of promising materials for high-rate, high-capacity, and long-duration electrochemical energy storage technologies.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2023

Characterization of Microwave Loss Using Multimode Superconducting Resonators

Measuring the losses arising from different materials and interfaces is crucial to improving the coherence of superconducting quantum circuits. Although this has been of interest for a long time, current studies can either only provide bounds to those losses, or require several devices for a complete characterization. In this work, we introduce a method to measure the microwave losses of materials and interfaces with a single multi-mode superconducting resonator. We demonstrate a formalism for analyzing the loss sensitivity of multi-mode systems and discuss the design strategies of multi-mode resonators for material loss studies. We present two types of multi-mode superconducting resonators for the study of bulk superconductors: the forky whispering-gallery-mode resonator (FWGMR) and the ellipsoidal cavity. We use these resonators to measure the surface dielectric, conductor, and seam losses of high-purity (5N5) aluminum and aluminum alloy (6061), as well as how they are affected by chemical etching, diamond turning, and thin-film coating. Here, we find that chemical etching and diamond turning reduce both the surface dielectric and conductive losses of high-purity aluminum, but provide no appreciable improvement to the seam. Coating the surfaces of diamond-turned aluminum alloys with e-beam evaporated or sputtered aluminum thinfilms significantly reduces all three losses under study. In addition, we study the effect of chemical etching on the surface of high-purity aluminum using transmission electron microscopy (TEM) and find that the chemical etching process creates a thinner and more uniform oxide layer, consistent with the observed improvement in the surface dielectric loss.

25 ENERGY STORAGE↗

DOE OSTI2023

Multielectrode electrochemical cell for in situ structural characterization of amorphous thin-film catalysts using high-energy X-ray scattering

A multielectrode-based electrochemical cell allows the structural characterization of an amorphous thin-film water oxidation catalyst under various electrochemical potentials using high-energy X-ray scattering and atomic pair distribution function (PDF) techniques. A multielectrode with five electrodes provides a sufficiently low background signal to enable high-energy X-ray scattering (HEXS) measurements and amplifies the extremely low HEXS signals from samples for high-resolution PDF analysis of in situ data from thin-film catalysts. Glassy carbon (GC) creates a relatively low intensity HEXS pattern and is used as a working electrode. Instead of a three-dimensional (3D) porous electrode architecture, the flat geometry of the electrode enables various deposition techniques to be used for the preparation of a highly conductive metal oxide layer. PDF analysis demonstrates high spatial resolution for a 230 nm thick amorphous iridium oxide film deposited on two roughened 60 µm thick GC electrodes. The PDF analysis resolves the domain size and distinguishes changes in fine structure which are directly correlated with the structure and function of the catalysts. In conclusion, the results bring the opportunity to analyze the structure of nanometre-scale amorphous thin-film catalysts in an electrolyte-compatible and compact 3D-printed electrochemical cell in a three-electrode configuration.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Wafer-scale growth of two-dimensional, phase-pure InSe

Two-dimensional (2D) indium monoselenide (InSe) has attracted significant attention as an ultrathin III–VI semiconductor with a combination of favorable attributes that are comparable to those of III–V semiconductors and van der Waals 2D transition-metal dichalcogenides. Nevertheless, there has been no demonstration of large-area synthesis of 2D InSe due to the complexity of the binary In-Se system and the difficulties in promoting lateral growth. Here, we report the polymorph-selective synthesis of epitaxial 2D InSe by metal-organic chemical vapor deposition (MOCVD) over 2-in wafers. We achieve polymorph-selective epitaxial growth of InSe on c-plane sapphire via flow modulation to control the Se/In ratio. The layer-by-layer growth allows thickness control with tunable optical properties comparable to those of bulk crystals. We also demonstrate gate-tunable electrical transport with a field-effect mobility comparable to that of single-crystalline flakes. Importantly, these results indicate that InSe grown by MOCVD could be an effective channel material for back-end-of-line integration in logic transistors.

2D materials↗

DOE OSTI2023

Vapor‐Phase Infiltrated Organic–Inorganic Positive‐Tone Hybrid Photoresist for Extreme UV Lithography

Abstract Continuing extreme downscaling of semiconductor devices, essential for high performance and energy efficiency of future microelectronics, hinges on extreme ultraviolet lithography (EUVL) and addressing associated challenges. One of such challenges is a need for improved EUV photoresists featuring simultaneously high sensitivity, resolution, and etch selectivity. Here, a new, positive‐tone, organic–inorganic hybrid EUV photoresist is demonstrated that delivers a high‐resolution EUVL and electron‐beam lithography (EBL) patterning capability combined with high sensitivity and etch resistance. The new resist, poly(methyl methacrylate) infiltrated with indium oxide (PMMA‐InO x ), is synthesized via vapor‐phase infiltration (VPI), a material hybridization technique derived from atomic layer deposition. The weak binding of the gaseous indium precursor, trimethylindium, to the carbonyl group in PMMA allows the synthesis of hybrids with inorganic content distributed uniformly in the resist, enabling high EUVL and EBL sensitivities (18 mJ cm −2 and 300 µC cm −2 , respectively) and high‐resolution positive‐tone EUVL patterning (e.g., 40 nm half‐pitch line‐space and 50 nm diameter contact hole patterns) with high Si etch selectivity (>30–40). The low exposure doses required to pattern the PMMA‐InO x hybrid resist, high etch resistance, and processing strategies, which are developed, can pave the way for using infiltration‐synthesized hybrid thin films as reliable positive‐tone EUV photoresists for future semiconductor patterning.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Record quantum efficiency from strain compensated superlattice GaAs/GaAsP photocathode for spin polarized electron source

Photocathodes based on GaAs and other III–V semiconductors are capable of producing highly spin-polarized electron beams. GaAs/GaAsP superlattice photocathodes exhibit high spin polarization; however, the quantum efficiency (QE) is limited to 1% or less. To increase the QE, we fabricated a GaAs/GaAsP superlattice photocathode with a Distributed Bragg Reflector (DBR) underneath. This configuration creates a Fabry–Pérot cavity between the DBR and GaAs surface, which enhances the absorption of incident light and, consequently, the QE. These photocathode structures were grown using molecular beam epitaxy and achieved record quantum efficiencies exceeding 15% and electron spin polarization of about 75% when illuminated with near-bandgap photon energies.

47 OTHER INSTRUMENTATION↗

DOE OSTI2023

Anisotropy of antiferromagnetic domains in a spin-orbit Mott insulator

The temperature-dependent behavior of magnetic domains plays an essential role in the magnetic properties of materials, leading to widespread applications. However, experimental methods to access the three-dimensional (3D) magnetic domain structures are very limited, especially for antiferromagnets. Over the past decades, the spin-orbit Mott insulator iridate Sr 2 IrO 4 has attracted particular attention because of its interesting magnetic structure and analogy to superconducting cuprates. Here, in this work, we apply resonant x-ray magnetic Bragg coherent diffraction imaging to track the real-space 3D evolution of antiferromagnetic ordering inside a Sr 2 IrO 4 single crystal as a function of temperature, finding that the antiferromagnetic domain shows anisotropic changes. The anisotropy of the domain shape reveals the underlying anisotropy of the antiferromagnetic coupling strength within Sr 2 IrO 4 . These results demonstrate the high potential significance of 3D domain imaging in magnetism research.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2023

Chemical Profiles of the Oxides on Tantalum in State of the Art Superconducting Circuits

Abstract Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. It is recently shown that replacing the metal in the capacitor of a transmon with tantalum yields record relaxation and coherence times for superconducting qubits, motivating a detailed study of the tantalum surface. In this work, the chemical profile of the surface of tantalum films grown on c‐plane sapphire using variable energy X‐ray photoelectron spectroscopy (VEXPS) is studied. The different oxidation states of tantalum that are present in the native oxide resulting from exposure to air are identified, and their distribution through the depth of the film is measured. Furthermore, it is shown how the volume and depth distribution of these tantalum oxidation states can be altered by various chemical treatments. Correlating these measurements with detailed measurements of quantum devices may elucidate the underlying microscopic sources of loss.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Lateral Integration of SnS and GeSe van der Waals Semiconductors: Interface Formation, Electronic Structure, and Nanoscale Optoelectronics

The emergence of atomically thin crystals has allowed extending materials integration to lateral heterostructures where different 2D materials are covalently connected in the plane. The concept of lateral heterostructures can be generalized to thicker layered crystals, provided that a suitably faceted seed crystal presents edges to which a compatible second van der Waals material can be attached layer by layer. Here, we examine the possibility of integrating multilayer crystals of the group IV monochalcogenides SnS and GeSe, which have the same crystal structure, small lattice mismatch, and similar bandgaps. In a two-step growth process, lateral epitaxy of GeSe on the sidewalls of multilayer SnS flakes (obtained by vapor transport of a SnS 2 precursor on graphite) yields heterostructures of laterally stitched crystalline GeSe and SnS without any detectable vertical overgrowth of the SnS seeds and with sharp lateral interfaces. Combined cathodoluminescence spectroscopy and ab initio calculations show the effects of small band offsets on carrier transport and radiative recombination near the interface. Further, the results demonstrate the possibility of forming atomically connected lateral interfaces across many van der Waals layers, which is promising for manipulating optoelectronics, photonics, and for managing charge- and thermal transport.

2D layered crystals↗

DOE OSTI2023

Growth of nanostructured molybdenum disulfide (MoS 2 ) thin films on a nanohole-patterned substrate using plasma-enhanced atomic layer deposition (ALD)

Nanostructured molybdenum disulfide (MoS 2 ) thin films were grown on a nanohole-patterned silicon substrate using plasma-enhanced atomic layer deposition. A nanoscale hole-patterned silicon substrate was fabricated for the growth of MoS 2 film using the self-assembly-based nanofabrication method. The nanoscale holes can significantly increase the surface area of the substrate while the formation and growth of nanostructures normally start at the surface of the substrate. Hydrogen sulfide (H 2 S) gas was used as the S source in the growth of molybdenum disulfide (MoS 2 ) while molybdenum (V) chloride (MoCl 5 ) powder was used as the Mo source. The MoS 2 film had a stoichiometric ratio of 1 (Mo) to 2 (S), and had peaks of E 1 2g and A 1g , which represent the in-plane and out-plane vibration modes of the Mo–S bond, respectively. It was found that the MoS 2 film grown in the nanoscale hole, especially at the wall of the hole, has more hexagonal-like structures due to the effects of nanoscale space confinement and the nanoscale interface although the film shows an amorphous structure. Post-growth high-temperature annealing ranging from 800 to 900 °C produced local crystalline structures in the film, which are compatible with those reported by other researchers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2023

Palladium-Percolated Networks Enabled by Low Loadings of Branched Nanorods for Enhanced H 2 Separations

Nanoparticles (NPs) at high loadings are often used in mixed matrix membranes (MMMs) to improve gas separation properties, but they can lead to defects and poor processability that impede membrane fabrication. Herein, it is demonstrated that branched nanorods (NRs) with controlled aspect ratios can significantly reduce the required loading to achieve superior gas separation properties while maintaining excellent processability, as demonstrated by the dispersion of palladium (Pd) NRs in polybenzimidazole for H 2 /CO 2 separation. Increasing the aspect ratio from 1 for NPs to 40 for NRs decreases the percolation threshold volume fraction by a factor of 30, from 0.35 to 0.011. An MMM with percolated networks formed by Pd NRs at a volume fraction of 0.039 exhibits H 2 permeability of 110 Barrer and H 2 /CO 2 selectivity of 31 when challenged with simulated syngas at 200 °C, surpassing Robeson's upper bound. In conclusion, this work highlights the advantage of NRs over NPs and nanowires and shows that right-sizing nanofillers in MMMs is critical to construct highly sieving pathways at minimal loadings. In conclusion, this work paves the way for this general feature to be applied across materials systems for a variety of chemical separations.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Active site identification and CO oxidation in UiO-66-XX thin films

Metal-organic frameworks (MOFs) offer an intrinsically porous and chemically tunable platform for gas adsorption, separation, and catalysis. Herein we investigate thin film derivatives of the well-studied Zr–O based MOF powders to understand their adsorption properties and reactivity with their adaption to thin films, involving diverse functionality with the incorporation of different linker groups and the inclusion of embedded metal nanoparticles: UiO-66, UiO-66-NH 2 , and Pt@UiO-66-NH 2 . Using transflectance IR spectroscopy, we determine the active sites in each film upon consideration of the acid-base properties of the adsorption sites and guest species, and perform metal-based catalysis with CO oxidation of a Pt@UiO-66-NH 2 film. Our study shows how surface science characterization techniques can be used to characterize the reactivity and the chemical and electronic structure of MOFs.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Atomistic Origins of Reversible Noncatalytic Gas–Solid Interfacial Reactions

Noncatalytic gas-solid reactions are a large group of heterogeneous reactions that are usually assumed to occur irreversibly because of the strong driving force to favor the forward direction toward the product formation. Using the example of Ni oxidation into NiO with CO 2 , herein we demonstrate the existence of the reverse element that results in the NiO reduction from the countering effect of the gaseous product of CO. Using in-situ electron microscopy observations and atomistic modeling, we show that the oxidation process occurs via preferential CO 2 adsorption along step edges that results in step-flow growth of NiO layers, and the presence of Ni atoms on the flat NiO surface promotes the nucleation of NiO layers. Simultaneously, the NiO reduction happens via preferential step-edge adsorption of CO that leads to the receding motion of atomic steps, and the presence of Ni vacancies in the NiO surface facilitates the CO adsorption induced surface pitting. Based on the in-situ TEM observations, temperature and CO 2 pressure effect maps are constructed to illustrate the spatiotemporal dynamics of the competing NiO redox reactions. We report, these results demonstrate the rich gas-solid surface reaction dynamics induced by the co-existing forward and reverse reaction elements and have practical applicability in manipulating gas-solid reactions via controlling the gas environment or atomic structure of the solid surface to steer the reaction toward the desired direction.

25 ENERGY STORAGE↗

DOE OSTI2023

Resolving complex intralayer transition motifs in high-Ni-content layered cathode materials for lithium-ion batteries

High-Ni-content layered materials are promising cathodes for next-generation lithium-ion batteries. However, investigating the atomic configurations of the delithiation-induced complex phase boundaries and their transitions remains challenging. Here, in this study, by using deep-learning-aided super-resolution electron microscopy, we resolve the intralayer transition motifs at complex phase boundaries in high-Ni cathodes. We reveal that an O3 → O1 transformation driven by delithiation leads to the formation of two types of O1–O3 interface, the continuous- and abrupt-transition interfaces. The interfacial misfit is accommodated by a continuous shear-transition zone and an abrupt structural unit, respectively. Atomic-scale simulations show that uneven in-plane Li+ distribution contributes to the formation of both types of interface, and the abrupt transition is energetically more favourable in a delithiated state where O1 is dominant, or when there is an uneven in-plane Li + distribution in a delithiated O3 lattice. Moreover, a twin-like motif that introduces structural units analogous to the abrupt-type O1–O3 interface is also uncovered. The structural transition motifs resolved in this study provide further understanding of shear-induced phase transformations and phase boundaries in high-Ni layered cathodes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2023

Near surface structure of ultrathin epitaxial Ru films on graphene/amorphous SiO 2 revealed by azimuthal RHEED

Ru has been considered as an alternative metallic candidate for future local interconnects. The 2D reciprocal space map constructed from the azimuthal reflection high-energy electron diffraction patterns reveals that ultrathin Ru(0001) is epitaxially grown on transferred graphene on amorphous SiO 2 through quasi-van der Waals interaction. The in-plane and out-of-plane lattice constants are measured from streaks’ separation and intensity modulations along streaks, respectively. Weak and broad rings indicate that a low density of nanoscale polycrystals exist on the surface. In this work, The intensities of 00 and non-00 diffraction spots vs. azimuthal angles in the 2D map show a few degrees out-of-plane and in-plane angular misorientations among grains, respectively. As the film thickness decreases these angular misorientations increase. Transmission electron microscopy carried out in this study also provides precise values of lattice constant and sub-grain sizes in the films. These findings show that ultrathin Ru film is epitaxial but not exactly single crystalline.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Vertical Architecture Solution-Processed Quantum Dot Photodetectors with Amorphous Selenium Hole Transport Layer

Colloidal quantum dots (CQDs) provide wide spectral tunability and high absorption coefficients owing to quantum confinement and large oscillator strengths, which along with solution processability, allow a facile, low-cost, and room-temperature deposition technique for the fabrication of photonic devices. However, many solution-processed CQD photodetector devices demonstrate low specific-detectivity and slow temporal response. To achieve improved photodetector characteristics, limiting carrier recombination and enhancing photogenerated carrier separation are crucial. In this study, we develop and present an alternate vertical-stack photodetector wherein we use a solution-processed quantum dot photoconversion layer coupled to an amorphous selenium (a-Se) wide-bandgap charge transport layer that is capable of exhibiting single-carrier hole impact ionization and is compatible with active-matrix readout circuitry. This a-Se chalcogenide transport layer enables the fabrication of high-performance and reliable solution-processed quantum dot photodetectors, with enhanced charge extraction capabilities, high specific detectivity (D* ~ 0.5–5 × 10 12 Jones), fast 3 dB electrical bandwidth (3 dB BW ~ 22 MHz), low dark current density (J D ~ 5–10 pA/cm 2 ), low noise current (i n ~ 20–25 fW/Hz 1/2 ), and high linear dynamic range (LDR ~130–150 dB) across the measured visible electromagnetic spectrum (~405–656 nm).

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2022

Three-dimensional strain imaging of irradiated chromium using multi-reflection Bragg coherent diffraction

Abstract Radiation-induced materials degradation is a key concern in limiting the performance of nuclear materials. The formation of nanoscale void and gas bubble superlattices in metals and alloys under radiation environments can effectively mitigate radiation-induced damage, such as swelling and aid the development of next generation radiation tolerant materials. To effectively manage radiation-induced damage via superlattice formation, it is critical to understand the microstructural changes and strain induced by such superlattices. We utilize multi-reflection Bragg coherent diffraction imaging to quantify the full strain tensor induced by void superlattices in iron irradiated chromium substrate. Our approach provides a quantitative estimation of radiation-induced three-dimensional (3D) strain generated at the microscopic level and predicts the number density of defects with a high degree of sensitivity. Such quantitative evaluation of 3D strain in nuclear materials can have a major impact on predicting materials behavior in radiation environments and can revolutionize design of radiation tolerant materials.

36 MATERIALS SCIENCE↗