Electrical injection to contactless near-surface InGaN quantum well
Charge injection to the prevailing and emerging light-emitting devices is almost exclusively based on the double heterojunction (DHJ) structures that have remained essentially unchanged for decades. In this letter, we report the excitation of a near surface indium gallium nitride (InGaN) quantum well (QW) by bipolar carrier diffusion from a nearby electrically excited pn-homojunction. The demonstrated near surface QW emitter is covered only by a 10 nm GaN capping leaving the light-emitting mesa perfectly free of metals, other contact, or current spreading structures. The presented proof-of-principle structure, operating approximately with a quantum efficiency of one fifth of a conventional single QW reference structure, provides conclusive evidence of the feasibility of using diffusion injection to excite near surface light-emitting structures needed, e.g., for developing light emitters or photo-voltaic devices based on nanoplasmonics or free-standing nanowires. In contrast to the existing DHJ solutions or optical pumping, our approach allows exciting nanostructures without the need of forming a DHJ, absorbing layers or even electrical contacts on the device surface.