Angular Effects in Proton-Induced Single-Event Upsets in Silicon-on-Sapphire and Silicon-on-Insulator Devices
We present new data in the ongoing effort to bound the effect of proton angle of incidence on the single-event upset (SEU) rate in silicon-on-sapphire (SOS) and silicon-on-insulator (SOI) devices.
Kniffin, S. D.↗