Engineering topics

Knoll, Jack

Publications and source records attributed to Knoll, Jack.

2 records

DOE OSTI2024

Modular Coaxial Power Converter for High-Density Integration into Medium-Voltage Cables

This work proposes to combine the functionality benefits of power electronics with the power density benefits of medium-voltage cables to create a streamlined, high-density power electronics solution that seamlessly integrates with medium-voltage cables. Located at the ends of a medium- or high-voltage line, the proposed converter uses a cascade of coaxial power conversion cells to gradually step down the voltage, and excels in high step-down applications. By mimicking the coaxial geometry of medium-voltage cables, the converter preserves the axisymmetric electric field of the cable which, when combined with a solid insulating dielectric, provides a voltage scaling advantage over conventional planar and PCB-based converter solutions. Similar to medium voltage cables, the converter is fully passively cooled. A passive cooling strategy allows for combined installation with existing medium voltage cable systems without the added cost, maintenance needs, infrastructure, and reliability concerns associated with active cooling systems. The scalability of the modular structure in combination with the integration benefits provide a flexible power electronics system that can adapt to the evolving demands of the grid.

coaxial power conversion cells↗

DOE OSTI2021

Low Thermal Resistance (0.5 K/W) Ga 2 O 3 Schottky Rectifiers With Double-Side Packaging

The low thermal conductivity of Ga 2 O 3 has arguably been the most serious concern for Ga 2 O 3 power and RF devices. Despite many simulation studies, there is no experimental report on the thermal resistance of a large-area, packaged Ga 2 O 3 device. This work fills this gap by demonstrating a 15-A double-side packaged Ga 2 O 3 Schottky barrier diode (SBD) and measuring its junction-to-case thermal resistance (R θJC ) in the bottom-side- and junction-side-cooling configurations. The R θJC characterization is based on the transient dual interface method, i.e., JEDEC 51-14 standard. The R θJC of the junction- and bottom-cooled Ga 2 O 3 SBD was measured to be 0.5 K/W and 1.43 K/W, respectively, with the former R θJC lower than that of similarly-rated commercial SiC SBDs. This low R θJC is attributable to the heat extraction directly from the Schottky junction instead of through the Ga 2 O 3 chip. Here, the R θJC lower than that of commercial SiC devices proves the viability of Ga 2 O 3 devices for high-power applications and manifest the significance of proper packaging for their thermal management.

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