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Koga, R.

Publications and source records attributed to Koga, R..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

The imaging Time-of-Propagation detector at Belle II

Here, we report on the construction, operation, and performance of the Time-of-Propagation detector with imaging used for the Belle II experiment running at the Super-KEKB e + e - collider. This detector is located in the central barrel region and uses Cherenkov light to provide particle identification among hadrons. The Cherenkov light is radiated in highly polished bars of synthetic fused silica (quartz) and transported to the ends of the bars via total internal reflection. One bar end is instrumented with finely segmented micro-channel-plate photomultiplier tubes to record the light, while the other end has a mirror attached to reflect the photons back to the instrumented end. Both the propagation times and hit positions of the Cherenkov photons are measured; these depend on the Cherenkov angle and together provide good discrimination among charged pions, kaons, and protons with momenta up to around 4 GeV/ c . To date, the detector has been used to record and analyze almost 600 fb −1 of Belle II data.

43 PARTICLE ACCELERATORS↗
NASA NTRS2003

Mitigating Upsets in SRAM-Based FPGAs from the Xilinx Virtex 2 Family

Static random access memory (SRAM) upset rates in field programmable gate arrays (FPGAs) from the Xilinx Virtex 2 family have been tested for radiation effects on configuration memory, block RAM and the power-on-reset (POR) and SelectMAP single event functional interrupts (SEFIs). Dynamic testing has shown the effectiveness and value of Triple Module Redundancy (TMR) and partial reconfiguration when used in conjunction. Continuing dynamic testing for more complex designs and other Virtex 2 capabilities (i.e., I/O standards, digital clock managers (DCM), etc.) is scheduled.

SEE testing↗
NASA NTRS2000

A Compendium of Recent Optocoupler Radiation Test Data

We present a compendium of optocoupler radiation test data including neutron, proton and heavy ion Displacement Damage (DD), Single Event Transients (SET) and Total Ionizing Dose (TID). Proton data includes ionizing and non-ionizing damage mechanisms.

Label, K. A.↗
NASA NTRS1998

Current Radiation Issues for Programmable Elements and Devices

State of the an programmable devices are utilizing advanced processing technologies, non-standard circuit structures, and unique electrical elements in commercial-off-the-shelf (COTS)-based, high-performance devices. This paper will discuss that the above factors, coupled with the systems application environment, have a strong interplay that affect the radiation hardness of programmable devices and have resultant system impacts in (1) reliability of the unprogrammed, biased antifuse for heavy ions (rupture), (2) logic upset manifesting itself as clock upset, and (3) configuration upset. General radiation characteristics of advanced technologies are examined and manufacturers' modifications to their COTS-based and their impact on future programmable devices will be analyzed.

Katz, R.↗
NASA NTRS1997

Radiation Effects on Current Field Programmable Technologies

Manufacturers of field programmable gate arrays (FPGAS) take different technological and architectural approaches that directly affect radiation performance. Similar y technological and architectural features are used in related technologies such as programmable substrates and quick-turn application specific integrated circuits (ASICs). After analyzing current technologies and architectures and their radiation-effects implications, this paper includes extensive test data quantifying various devices total dose and single event susceptibilities, including performance degradation effects and temporary or permanent re-configuration faults. Test results will concentrate on recent technologies being used in space flight electronic systems and those being developed for use in the near term. This paper will provide the first extensive study of various configuration memories used in programmable devices. Radiation performance limits and their impacts will be discussed for each design. In addition, the interplay between device scaling, process, bias voltage, design, and architecture will be explored. Lastly, areas of ongoing research will be discussed.

Katz, R.↗
NASA NTRS1995

Trends in Device SEE Susceptibility from Heavy Ions

The sixth set of heavy ion single event effects (SEE) test data have been collected since the last IEEE publications in December issues of IEEE - Nuclear Science Transactions for 1985, 1987, 1989, 1991, and the IEEE Workshop Record, 1993. Trends in SEE susceptibility (including soft errors and latchup) for state-of- are evaluated.

single event effects latchup radiation hardening↗
NASA NTRS1991

Update on parts SEE suspectibility from heavy ions

JPL and the Aerospace Corporation have collected a fourth set of heavy ion single event effects (SEE) test data. Trends in SEE susceptibility (including soft errors and latchup) for state-of-the-art parts are displayed. All data are conveniently divided into two tables: one for MOS devices, and one for a shorter list of recently tested bipolar devices. In addition, a new table of data for latchup tests only (invariably CMOS processes) is given.

Nichols, D. K.↗
NASA NTRS1989

Latest trends in parts SEP susceptibility from heavy ions

JPL and Aerospace have collected a third set of heavy-ion single-event phenomena (SEP) test data since their last joint IEEE publications in December 1985 and December 1987. Trends in SEP susceptibility (e.g., soft errors and latchup) for state-of-the-art parts are presented. Results of the study indicate that hard technologies and unacceptably soft technologies can be flagged. In some instances, specific tested parts can be taken as candidates for key microprocessors or memories. As always with radiation test data, specific test data for qualified flight parts is recommended for critical applications.

Nichols, Donald K.↗
NASA NTRS1986

Time-domain sensitivity enhancement in pulsed Pb-TDL gas monitors

A Pb-salt tunable diode laser (TDL) has found many applications in the field of atmospheric gas analysis. Its continuous tunablility and fine spectral purity in the mid infrared region are outstanding from other lasers. The only shortcoming is that it requires cryogenic operating temperatures, though, it is improved year by year towards the room temperature operation. A repeated pulse operation of Pb salt diode lasers is possible with a thermoelectric cooling device, which allows an instrument a portable geometry disusing a heavy, bulky and power consuming mechanical refrigerator. A derivative spectrometry was exploiting the quick tunability of Pb salt diode lasers, though they are continuous wave (cw) operated with refrigerator or liquid nitrogen so far. A new system for derivative spectrometry with a pulsed diode laser will extend its field of applications because of reduced weights and size of measuring instruments. A preliminary results is shown that demonstrates the feasibility of an attempt to implement the derivative spectrmetry with repeatedly pulse driven diode lasers. Atmospheric methane was measured with 8 ppm/m sensitivity. Further results of parametric optimization for the best signal to noise ratios under any given device characteristics as well as for available real devices is given.

Koga, R.↗
NASA NTRS1986

Trends in parts susceptibility to single event upset from heavy ions

New test data from the Jet Propulsion Laboratory (JPL), The Aerospace Corporation, Rockwell International (ANAHEIM) and IRT have been combined with published data of JPL and Aerospace to form a nearly comprehensive body of single event upset (SEU) test data for heavy ion irradiations. This data has been arranged to exhibit the SEU susceptibility of devices by function, technology and manufacturer. Clear trends emerge which should be useful in predicting future device performance.

Nichols, D. K.↗
NASA NTRS1985

Trends in parts susceptibility to single event upset from heavy ions

New test data have been combined with published data to form a nearly comprehensive body of single event upset (SEU) test data for heavy ion irradiations. These data have been arranged to exibit the SEU susceptibility of devices by function, technology, and manufacturer. Clear trends emerge which should be useful in predicting future device performance.

Nichols, D. K.↗
NASA NTRS1985

A search for solar neutrons on a long duration balloon flight

The EOSCOR 3 detector, designed to measure the flux of solar neutrons, was flown on a long duration RACOON balloon flight from Australia during Jan. through Feb, 1983. The Circum-global flight lasted 22 days. No major solar activity occurred during the flight and thus only an upper limit to the solar flare neutrons flux is given. The atmospheric neutron response is compared with that obtained on earlier flights from Palestine, Texas.

Koga, R.↗
NASA NTRS1985

Cosmic ray simulation and testing program

Single event upset (SEU) and latchup vulnerabilities were determined for a number of parts of interest to NASA space programs. In cases where a threshold linear energy transfer (LET) for SEU could be measured, an upset rate in a low inclination Space Shuttle orbit was computed. The predicted upset rates are extremely low, except for the devices with LET thresholds below the geomagnetic cutoff for altitude and inclination of the Space Shuttle orbit. While some of the devices do exhibit latchup, the cross sections and threshold LETs are such that the risk associated with flying these devices in low, near equatorial orbits is small if not negligible.

Kolasinski, W. A.↗
NASA NTRS1984

Space Shuttle flight test results of the Cosmic Ray Upset Experiment

CRUX is the first engineering flight experiment designed to test for the incidence of upsets in microcircuits by energetic particles. Harris HM 6504 4K x 1 static CMOS RAM's were used as the test device types in a 1.3 megabit memory which flew on two Shuttle flights. Ground (cyclotron) test information led to a prediction of about one error every 1000 days. No errors were experienced in 10 days of flight. While data were not in conflict with the error prediction and do support it, quantitative validation of the modeling for upsets is not statistically possible. Follow-on hardware (CRUX III) incorporates five different state-of-the-art microcircuits, and is scheduled for flight in October 1984.

Adolphsen, J. W.↗
NASA NTRS1982

Single event upset vulnerability of selected 4K and 16K CMOS static RAM's

Upset thresholds for bulk CMOS and CMOS/SOS RAMS were deduced after bombardment of the devices with 140 MeV Kr, 160 MeV Ar, and 33 MeV O beams in a cyclotron. The trials were performed to test prototype devices intended for space applications, to relate feature size to the critical upset charge, and to check the validity of computer simulation models. The tests were run on 4 and 1 K memory cells with 6 transistors, in either hardened or unhardened configurations. The upset cross sections were calculated to determine the critical charge for upset from the soft errors observed in the irradiated cells. Computer simulations of the critical charge were found to deviate from the experimentally observed variation of the critical charge as the square of the feature size. Modeled values of series resistors decoupling the inverter pairs of memory cells showed that above some minimum resistance value a small increase in resistance produces a large increase in the critical charge, which the experimental data showed to be of questionable validity unless the value is made dependent on the maximum allowed read-write time.

Kolasinski, W. A.↗