Engineering topics

Kondo, K.

Publications and source records attributed to Kondo, K..

3 records

DOE OSTI2024

Performance of laser ion source LION operated at Brookhaven National Laboratory

LION is a laser ion source that has been in operation at Brookhaven National Laboratory (BNL) to provide heavy ions for NASA Space Radiation Laboratory (NSRL) and Relativistic Heavy Ion Collider (RHIC). It is the first laser ion source to supply stable ion beams for a long-term operation for users at a large accelerator facility in the world. LION is located at the upstream end of the heavy ion accelerator complex at BNL and supplies singly charged ion beams of various ion species. LION has been in operation since 2014 and is planned to be upgraded in 2024. This paper summarizes the operational performance achieved by LION.

43 PARTICLE ACCELERATORS↗

DOE OSTI2019

Multiple colliding laser pulses as a basis for studying high-field high-energy physics

Apart from maximizing the strength of optical electromagnetic fields achievable at high-intensity laser facilities, the collision of several phase-matched laser pulses has been identified theoretically as a trigger of and way to study various phenomena. These range from the basic processes of strong-field quantum electrodynamics to the extraordinary dynamics of the generated electron-positron plasmas. This has paved the way for several experimental proposals aimed at both fundamental studies of matter at extreme conditions and the creation of particle and radiation sources. Because of the unprecedented capabilities of such sources, they have the potential to open up new opportunities for experimental studies in nuclear and quark-gluon physics. We perform here a systematic analysis of different regimes and opportunities achievable with the concept of multiple colliding laser pulses, for both current and upcoming laser facilities. Here, we reveal that several distinct regimes could be within reach of multi-petawatt laser facilities.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

NASA NTRS1987

Arsenic ambient conditions preventing surface degradation of GaAs during capless annealing at high temperatures

Changes in surface morphology and composition caused by capless annealing of GaAs were studied as a function of annealing temperature, T(GaAs), and the ambient arsenic pressure controlled by the temperature, T(As), of an arsenic source in the annealing ampul. It was established that any degradation of the GaAs surface morphology could be completely prevented, providing that T(As) was more than about 0.315T(GaAs) + 227 C. This empirical relationship is valid up to the melting point temperature of GaAs (1238 C), and it may be useful in some device-processing steps.

Kang, C. H.↗