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Kreidler, Eric R.

Publications and source records attributed to Kreidler, Eric R..

Research on High Temperature Ceramic Insulation for Electrical Conductors

Three methods for applying ceramic coatings to wires were examined in depth and a fourth (chemical vapor deposition) was studied briefly. CVD coatings were not reported in the thesis because it was realized early in the study that the deposition rate of the coatings was too slow to be used in a commercial process. Of the methods reported in the thesis, slurry coating was the most promising. This method consists of slowly drawing a platinum wire through a thixotropic slurry of alumina in a vehicle composed of polyvinyl butyral, methyl ethyl ketone, and toluene. The coatings produced by this method were continuous and free of cracks after sintering. The sintered coatings crack when the wire is bent around sharp corners, but most of the coating remains in place and still provides electrical insulation between the wire and any metallic structure to which the wire may be attached. The coating thickness was 0.61 mm (16 micrometers). The electrical resistivity of the intact coating was 340 M-Ohm-cm at 800 C and 23 M-Ohm-cm at 1050 C. Therefore, these coatings more than meet the electrical requirements for use in turbine engines. Although adherence of the coating to the wire was generally excellent, a problem was noted in localized areas where the coating flaked off. Further work will be needed to obtain good coating adherence along the entire length of the wire. The next most promising coatings were made by electrophoretic deposition (EPD) of Al2O3 onto platinum wires, using mixtures of ethanol and acetone as the suspending liquid. These EPD coatings were made only on short lengths of wire because the coating is too fragile to allow spooling of the wire. The worst coatings were those made by electrophoretic deposition from aqueous suspensions. Continuous slurry coating of wire was achieved, but due to lack of suitable equipment, the wire had to be cut into short lengths for sintering.

Kreidler, Eric R.↗

The behavior of SiC and Si3N4 ceramics in mixed oxidation/chlorination environments

The behavior of silicon-based ceramics in mixed oxidation/chlorination environments was studied. High pressure mass spectrometry was used to quantitatively identify the reaction products. The quantitative identification of the corrosion products was coupled with thermogravimetric analysis and thermodynamic equilibrium calculations run under similar conditions in order to deduce the mechanism of corrosion. Variations in the behavior of the different silicon-based materials are discussed. Direct evidence of the existence of silicon oxychloride compounds is presented.

Marra, John E.↗

Reactions of silicon-based ceramics in mixed oxidation chlorination environments

The reaction of silicon-based ceramics with 2 percent Cl2/Ar and 1 percent Cl2/1 percent to 20 percent O2/Ar at 950 C was studied with thermogravimetric analysis and high-pressure mass spectrometry. Pure Si, SiO2, several types of SiC, and Si3N4 were examined. The primary corrosion products were SiCl4(g) and SiO2(s) with smaller amounts of volatile silicon oxychlorides. The reactions appear to occur by chlorine penetration of the SiO2 layer, and gas-phase diffusion of the silicon chlorides away from the sample appears to be rate limiting. Pure SiO2 shows very little reaction with Cl2, SiC with excess Si is more reactive than the other materials with Cl2, whereas SiC with excess carbon is more reactive than the other materials with Cl2/O2. Si3N4 shows very little reaction with Cl2. These differences are explained on the basis of thermodynamic and microstructural factors.

Marra, John E.↗

Direct mass spectrometric identification of silicon oxychloride compounds

Silicon oxychloride compounds formed during the high temperature reaction of Si and SiC with Cl2/O2 mixtures at 930 and 950 C have been directly observed with an atmospheric pressure mass spectrometer sampling system. Molecules with the formulas Si2OCl6 and Si3OCl8 have been identified. These compounds are very likely formed by a gas phase reaction between the oxygen gas in the system and silicon tetrachloride which is produced by chlorination of the silicon-based material.

Marra, John E.↗