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Krishnan, M.

Publications and source records attributed to Krishnan, M..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Axial mass fraction measurements in a 300kA dense plasma focus

The dynamics and characteristics of the plasma sheath during the axial phase in a ~300 kA, ~2 kJ dense plasma focus using a static gas load of Ne at 1–4 Torr are reported. The sheath, which is driven axially at a constant velocity ~10 5 m/s by the j × B force, is observed using optical imaging, to form an acute angle between the electrodes. This angle becomes more acute (more parallel to the axis) along the rundown. The average sheath thickness nearer the anode is 0.69 ± 0.02 mm and nearer the cathode is 0.95 ± 0.02 mm. The sheath total mass increases from 1 ± 0.02 μg to 6 ± 0.02 μg over the pressure range of 1–4 Torr. However, the mass fraction (defined as the sheath mass/total mass of cold gas between the electrodes) decreases from 7% to 5%. In addition, the steeper the plasma sheath, the more mass is lost from the sheath, which is consistent with radial and axial motion. Lastly, experimental results are compared to the Lee code when 100% of the current drives the axial and radial phase.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

The effect of gradients at stagnation on K-shell x-ray line emission in high-current Ar gas-puff implosions

We report that argon gas puffs have produced 330 kJ ± 9% of x-ray radiation above 3 keV photon energy in fast z-pinch implosions, with remarkably reproducible K-shell spectra and power pulses. This reproducibility in x-ray production is particularly significant in light of the variations in instability evolution observed between experiments. Lastly, soft x-ray power measurements and K-shell line ratios from a time-resolved spectrum at peak x-ray power suggest that plasma gradients in these high-mass pinches may limit the K-shell radiating mass, K-shell power, and K-shell yield from high-current gas puffs.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In{sub 0.53}Ga{sub 0.47}As (InGaAs) active layer is equal to 3.5 × 10{sup 9} cm{sup −2}, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm{sup 2}/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000–3000 cm{sup 2}/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Superconducting Nb thin films on Cu and Cu alloys for applications in SRF accelerators

This article presents the results of Nb thin films deposited on Cu and phosphor bronze via coaxial energetic deposition (CEDTM). CEDTM is a non-equilibrium cathodic arc process that drives medium energy (50 - 150 eV) ions into a few atomic layers beneath the surface to promote the growth of dense, ordered films via sub-plantation physics1. Nb films deposited on crystalline substrates by CEDTM have shown bulk-Nb like (>300-500) RRR values1. Here we describe Nb films of 1-10 ?m deposited on coupons and complex structures made of Cu and phosphor bronze at substrate temperatures of 100 have been achieved on fine grain Cu with little surface preparation. The vortex penetration magnetic field was measured by DC SQUID and these results are presented along with comparisons between bulk Nb and thin film Nb on crystalline substrates. The CEDTM approach has applications in superconducting bellows interconnects as well as to SRF cavities. 1 M. Krishnan, E. Valderrama, B. Bures, K. Wilson-Elliott, X. Zhao, L. Phillips, Anne-Marie Valente-Feliciano, Joshua Spradlin, C. Reece and K. Seo, Superconductor Science and Technology, vol. 24, no. 11, p. 115002, Nov. 2011.

James, C.↗
DOE OSTI2012

Nb3Sn thin films grown using energetic condensation for SRF applications

The traditional method used to coat thin films of Nb3Sn onto SRF cavities has been to start with a Nb cavity and dip it into molten Sn. At high temperatures (>1100 °C), the Sn diffuses into the Nb to create a stoichiometrically correct film1,2 that offers superconducting properties. Here we describe a lower-temperature process that uses two separate plasmas of Nb and Sn to fire 50-150eV ions of Nb and Sn at a substrate that is heated to <400 °C. The non-equilibrium energetic condensation of Nb and Sn ions via subplantation3 creates a high crystal quality film of Nb3Sn. The stoichiometry of this film is controlled by adjusting the currents to the two separate cathodes that in turn controls the ion fluxes to the substrate. EDX, Tc, RRR and other measurements show that this method enables growth of superconducting films even on relatively low temperature substrates. This approach might offer a path to creating higher temperature Cu SRF cavities of the future that might reduce materials and cryogenics costs. 1 G. Arnolds-Mayer, Proc. SRF2, Geneva, Switzerland, pp. 643-666, 1984 2 Sam Posen, Matthias Liepe, Yi Xie, N. Valles, Proceedings of Thin Films Workshop, Padua Italy, October 2010 3 M. Krishnan et al., Superconductor Science and Technology, vol. 24, no. 11, p. 115002, Nov. 2011

James, C.↗
DOE OSTI2012

Response to “Comment on ‘Twin symmetry texture of energetically condensed niobium thin films on sapphire substrate’ ” [J. Appl. Phys. 112, 016101 (2012)]

Welander is correct about the misidentified crystal-directions in the top-view sapphire lattice (Fig. 4 [Zhao et al., J. Appl. Phys. 110, 033523 (2011)]). He is also correct about the misorientation of the pole figures in Fig. 4. In Fig. 1 of this response, we have corrected these errors. Perhaps because of these errors, Welander misconstrued our discussion of the Nbcrystal growth as claiming a new 3D registry. That was not our intention. Rather, we wished to highlight the role of energetic condensation that drives low-defect crystal growth by a combination of non-equilibrium sub-plantation that disturbs the substrate lattice and thermal annealing that annihilates defects and promotes large-grain crystal growth.

Zhao, X.↗
DOE OSTI2012

Interaction of a supersonic, radiatively cooled plasma jet with an ambient medium

An experimental investigation into the interaction of a supersonic, radiatively cooled plasma jet with argon gas is presented. The jet is formed by ablation of an aluminum foil driven by a 1.4 MA, 250 ns current pulse in a radial foil Z-pinch configuration. The outflow consists of a supersonic (Mach number ∼3–5), dense (ion density ni ∼ 1018 cm−3), highly collimated (half-opening angle ∼2°−5°) jet surrounded by a lower density halo plasma moving with the same axial velocity as the jet. The addition of argon above the foil leads to the formation of a shock driven by the ablation of halo plasma, together with a bow-shock driven by the dense jet. Experimental data with and without the presence of argon are compared with three-dimensional, magneto-hydrodynamic simulations using the GORGON code.

Suzuki-Vidal, F.↗
NASA NTRS1976

Physical processes in hollow cathodes

Detailed measurements of magnetic field and floating potential inside large hollow cathodes in a quasi-steady MPD arc facility reveal a cavity plasma that is concentrated near the orifice for most operating conditions. However, for certain combinations of current and mass flow, the peak surface current density penetrates into the cavity up to one diameter upstream of the orifice. These measured distributions are consistent with a conduction model which suggests that maximum current penetration, and the more efficient cathode emission which accompanies it, occurs when the dominant mean free path for electron energy exchange is comparable to the cavity diameter.

Krishnan, M.↗
NASA NTRS1976

On the emission mechanism in high current hollow cathode arcs

Large hollow cathodes have been operated in a magnetoplasmadynamic arc over wide ranges of current and mass flow, with orifice current densities and mass fluxes encompassing those encountered in low current steady state hollow cathode arcs. Detailed cathode interior measurements of current and potential distributions show that maximum current penetration into the cathode is about one diameter axially upstream from the tip, with peak inner surface current attachment up to one cathode diameter upstream of the tip. The spontaneous attachment of peak current upstream of the cathode tip is suggested as a criterion for characteristic hollow cathode operation. This empirical criterion was verified by experiment.

Krishnan, M.↗
NASA NTRS1975

Hollow cathode characteristics in high current discharges

Current and potential distributions have been measured in various large hollow cathodes for currents from 0.9 to 7 kA and mass flows from 0.001 to 16 g/sec. For a variety of cavity diameters and shapes, all operated at 7 kA and 4 g/sec, the cathode current attaches over 0.6 cm of the cavity near the open end, where the electric field is less than 10 V/cm. However, for a fixed cathode configuration, the current conduction pattern is sensitive to both the current and the mass flows. For a given current, a range of mass flows is determined for maximum current penetration into the cavity, with the extent of penetration increasing as current decreases. Spectroscopic and photographic studies of AII radiance and electron densities within the cavity indicate a corresponding distribution of highly conducting plasma.

Krishnan, M.↗
NASA NTRS1974

Hollow cathode physics

Hollow cathode configurations with cavity diameters up to 2 cm have been operated in quasi-steady MPD discharges at tens of kA and argon massflows up to 16 g per sec. Internal probe measurements exhibit densities of current attachment of 1.5 kA per sq cm in a 1 cm wide zone at the end of the cavity coincident with low electric fields of less than 10 V per cm. This zone is further characterized by a sheath of bright AII and continuum radiance which is absent at low massflows. Electron densities exceed 10 to the 17th power per cu cm, indicating a conductivity of 10,000 mhos per m at the cavity exit for an electron temperature of only a few eV.

Von Jaskowsky, W. F.↗