Origin of broad luminescence from site-controlled InGaN nanodots fabricated by selective-area epitaxy: Origin of broad luminescence from site-controlled InGaN nanodots
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Engineering topics
Ku, P. -C.
Publications and source records attributed to Ku, P. -C..
MOCVD growth of vertically aligned InGaN nanowires
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Phase-field simulations of GaN/InGaN quantum dot growth by selective area epitaxy
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Angular selective backreflector for semitransparent photovoltaics
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Angular selective semi-transparent photovoltaics
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Room-temperature quantum-dot-like luminescence from site-controlled InGaN quantum disks
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