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Kumari, Preeti

Publications and source records attributed to Kumari, Preeti.

5 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Total-Ionizing-Dose Effects on Long-term Data Retention Characteristics of Commercial 3-D NAND Memories

This article evaluates the data retention characteristics of irradiated multi-level cell (MLC) 3-D NAND flash memories. We irradiate the memory chips by a Co-60 gamma-ray source for up to 50 krad(Si) and then write a random data pattern on the irradiated chip to find its retention characteristics. The experimental results show that the data retention property of the irradiated chips is significantly degraded compared to the un-irradiated ones. We evaluate two independent strategies to improve the data retention characteristics of the irradiated chips. Furthermore, the first method involves high-temperature annealing of the irradiated chip while the second method suggests pre-programming the memory modules before deploying them in radiation-prone environments.

3-D NAND flash↗
DOE OSTI2021

Analytical Bit-Error Model of NAND Flash Memories for Dosimetry Application

In this work, we provide an analytical model for the total ionizing dose (TID) effects on the bit error statistics of commercial flash memory chips. We have validated the model with experimental data collected by irradiating several commercial NAND flash memory chips from different technology nodes. We find that our analytical model can project bit errors at higher TID values (~ 20 krad(Si)) from measured data at lower TID values (<1 krad(Si)). Based on our model and the measured data, we have formulated basic design rules for using a commercial flash memory chip as a dosimeter. We discuss the impact of NAND chip-to-chip variability, noise margin and the intrinsic errors on the dosimeter design using detailed experimentation.

3-D NAND↗
DOE OSTI2021

Radiation-Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory

Here, we have evaluated the Read-Retry (RR) functionality of the 3-D NAND chip of multilevel-cell (MLC) configuration after total ionization dose (TID) exposure. The RR function is typically offered in the high-density state-of-the-art NAND memory chips to recover data once the default memory read method fails to correct data with error correction codes (ECCs). In this work, we have applied the RR method on the irradiated 3-D NAND chip that was exposed with a Co-60 gamma-ray source for TID up to 50 krad (Si). Based on our experimental evaluation results, we have proposed an algorithm to efficiently implement the RR method to extend the radiation tolerance of the NAND memory chip. Our experimental evaluation shows that the RR method coupled with ECC can ensure data integrity of MLC 3-D NAND for TID up to 50 krad (Si).

3-D NAND↗
DOE OSTI2020

Layer-Dependent Bit Error Variation in 3-D NAND Flash Under Ionizing Radiation

In this paper, we studied the total ionization dose (TID) effects on the multilevel-cell (MLC) 3-D NAND flash memory using Co-60 gamma radiation. We found a significant page-to-page bit error variation within a physical memory block of the irradiated memory chip. Our analysis showed that the origin of the bit error variation is the unique vertical layer-dependent TID response of the 3-D NAND. We found that the memory pages located at the upper and lower layers of the 3-D stack show higher fails compared to the middle-layer pages of a given memory block. We confirmed our findings by comparing radiation response of four different chips of the same specification. In addition, we compared the TID response of the MLC 3-D NAND with that of the 2-D NAND chip, which showed less page-to-page variation in bit error within a given memory block. We discuss the possible application of our findings for the radiation-tolerant smart memory controller design.

3-D NAND flash↗