Engineering topics

Kuo, Jimmy Jiahong

Publications and source records attributed to Kuo, Jimmy Jiahong.

5 records

DOE OSTI2022

Contact Resistance of Carbon–Li x (Ni,Mn,Co)O 2 Interfaces

Abstract Electronic resistance in lithium‐ion battery positive electrodes is typically attributed to the bulk resistance of the active material and the network resistance of the carbon additive. Expected overpotentials from these bulk components are minimal relative to that from charge‐transfer resistance. However, literature reports show that cell overpotentials are often much more sensitive to conductive additives than the expected level from bulk or percolating‐network transport. This discrepancy motivated a detailed examination of the contact resistance between the active material and conductive additive. The contact and bulk resistances are simultaneously measured using dense bar samples of lithium‐layered oxides (Li x Ni 1 /3 Mn 1/3 Co 1/3 O 2 and Li x Ni 0.5 Mn 0.3 Co 0.2 O 2 ) in contact with carbon black. It is found that the contact resistance dominates the overall electronic resistance when the length scale is smaller than millimeters; after correcting for contact effects, bulk conductivity of layered oxides is determined to be orders‐of‐magnitude higher than previously reported. In porous electrodes, it is found from three‐electrode electrochemical impedance spectroscopy that the carbon content most heavily influences the low‐frequency regime (≈0.01 Hz), as opposed to the high frequency (>10 3 Hz) regime expected from electronic percolating properties. Constriction effects within the layered oxide are identified as the dominant mechanism for contact resistance and its implication is investigated for porous electrodes.

Kuo, Jimmy Jiahong↗

DOE OSTI2021

Galvanostatic Intermittent Titration Technique Reinvented: Part II. Experiments

Following a critical review of the galvanostatic intermittent titration technique in Part I, here we experimentally demonstrate how to extract chemical diffusivity with a modified method. We prepare dense bulk samples that ensure diffusion-limitation. We utilize the scaling with $\sqrt{{t}_{\mathrm{relax}}+\tau }-\sqrt{{t}_{\mathrm{relax}}}$ (trelax: relaxation time; τ: pulse duration), avoiding problems with composition-dependent overpotentials. The equilibrium Nernst voltage is measured separately using small porous particles. This separation between the diffusion measurement and the titration procedure is critical for performing each measurement in a reliable setting. We report the chemical diffusion coefficients of LixNi1/3Mn1/3Co1/3O2 and their activation energy. We extract ionic conductivity and compare it with total conductivity to confirm ion-limitation in chemical diffusion. The measurements suggest that the time scale for diffusion in typical Li-ion battery particles could be much shorter than that of the intercalation/deintercalation processes at the particle surface (Biot number less than 0.1).

25 ENERGY STORAGE↗

DOE OSTI2020

Expression of interfacial Seebeck coefficient through grain boundary engineering with multi-layer graphene nanoplatelets

Energy filtering has been a long-sought strategy to enhance a thermoelectric material's figure of merit zT through improving its power factor. Here we show a composite of multi-layer graphene nanoplatelets (GNP) and n-type Mg 3 Sb 2 leads to the expression of an energy filtering like effect demonstrated by an increase in the material's Seebeck coefficient and maximum power factor, without impact on the material's carrier concentration. We analyse these findings from the perspective of a heterogeneous material consisting of grain and grain boundary phases, instead of a more traditional and common analysis that assumes a homogeneously transporting medium. An important implication of this treatment is that it leads to the development of an interfacial Seebeck coefficient term, which can explain the observed increase in the material's Seebeck coefficient. The contribution of this interfacial Seebeck coefficient to the overall Seebeck coefficient is determined by the relative temperature drop across the grain boundary region compared to that of the bulk material. In Te doped Mg 3 Sb 2 we show the introduction of GNP increases the interfacial thermal resistance of grain boundaries, enhancing the contribution of the interfacial Seebeck coefficient arising from grain boundaries to the overall Seebeck coefficient. Without significant detriment to the electrical conductivity this effect results in a net increase in maximum power factor. This increased interfacial thermal resistance also leads to the synergistic reduction of the total thermal conductivity. As a result, we enhance zT of the Mg 3 Sb 2 to a peak value of 1.7 near 750 K. Considering the two-dimensional nature of the grain boundary interface, this grain boundary engineering strategy could be applied to a few thermoelectric systems utilizing various two-dimensional nanomaterials.

42 ENGINEERING↗

DOE OSTI2020

Understanding the thermally activated charge transport in NaPb m SbQ m+2 (Q = S, Se, Te) thermoelectrics: weak dielectric screening leads to grain boundary dominated charge carrier scattering

Many thermoelectric materials feature irregular electrical conductivity with thermally activated transport below ~600 K and metallic behavior at high temperatures, despite possessing degenerate carrier concentrations. The suppression of the electrical conductivity ultimately degrades the thermoelectric performance on the cold side and limits the device energy conversion efficiency. As such, establishing the origin of the low temperature scattering and developing strategies to mitigate its effect are paramount issues. To date, the correct microscopic description of the low temperature carrier scattering remains an open issue, and there is little work addressing why some thermoelectric materials are more susceptible to the deleterious behavior. Here, we use the promising thermoelectric alloys of PbQ and NaSbQ 2 (Q = S, Se, Te) as model systems to address these concerns. We directly show the thermally activated transport stems from the scattering of charge carriers by the grain boundaries (GBs), and that the expected metallic electrical conductivity is recovered by preparing large grained samples with reduced densities of GBs. We furthermore study the electrical properties NaPb m SbSe m+2 as a function of NaSbSe 2 fraction, as well as those of the chalcogenide analogues, PbTe–NaSbTe 2 and PbS–NaSbS 2 , and demonstrate that the strength of GB scattering can be understood by utilizing simple chemical principles. By considering the polarizability of the host atoms, we directly relate the magnitude of GB scattering to the relative degree of charge carrier screening in each material, and demonstrate that GB scattering is strongest in the ionic NaSbQ 2 -rich compounds and weakest in more polarizable PbQ-rich phases. We finally show how these chemical arguments elegantly explain the strong GB scattering in numerous other thermoelectric materials. By uniting the deleterious charge transport properties exhibited by many different compounds into a common picture, we discuss how our work gives design principles for proper microstructure engineering in emerging thermoelectric materials.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Systematic over-estimation of lattice thermal conductivity in materials with electrically-resistive grain boundaries

Reducing the thermal conductivity κ of a material via nano-structuring to create small grain sizes is one of the most common strategies to improve thermoelectric materials. In such polycrystalline materials heat carrying phonons are scattered at the grain boundaries, which directly improves the thermoelectric quality factor and ultimately the figure-of-merit zT. In some cases, however, such as in Mg 3 Sb 2 , SnSe, and Mg 2 Si an opposite trend is found where higher lattice thermal conductivity reported in small grain polycrystalline material than in large grain or single crystal materials. This unphysical result indicates a problem with the conventional use of the Wiedemann–Franz law. Here, we trace this problematic finding to the electrical resistance at the grain boundaries, which leads to an overestimation of the phonon or lattice contribution of the thermal conductivity κ L . In materials with significant grain boundary electrical resistance, the estimated electronic contribution to the thermal conductivity LσT is low because the measured electrical conductivity σ is low. However within the grain electrons may still be transporting more heat than the total conductivity suggests, leading to an overestimation of κ L if the conventional κ L = κ – LσT is used with the measured values of κ and σ. Here, the overestimation of κL in small-grain samples is shown to be pervasive across a broad range of thermoelectric materials, including Mg 3 Sb 2 , Mg 2 Si, PbTe, PbSe, SnSe, (Hf,Zr)CoSb, CoSb 3 , and Bi 2 Te 3 alloys, and a correction is necessary to properly understand and predict their charge and heat transport.

36 MATERIALS SCIENCE↗