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Kuraitis, Sara

Publications and source records attributed to Kuraitis, Sara.

Method of making thin films of sodium fluorides and their derivatives by ALD

A method of making thin films of sodium fluorides and their derivatives by atomic layer deposition (“ALD”). A sodium precursor is exposed to a substrate in an ALD reactor. The sodium precursor is purged, leaving the substrate with a sodium intermediate bound thereon. A fluorine precursor is exposed to the bound sodium intermediate in the ALD reactor. The fluorine precursor is purged and a sodium fluoride film is formed on the substrate.

Mane, Anil U.↗

Atomic layer deposition of sodium fluoride thin films

The need for advanced energy conversion and storage devices remains a critical challenge amid the growing worldwide demand for renewable energy. Metal fluoride thin films are of great interest for applications in lithium-ion and emerging rechargeable battery technologies, particularly for enhancing the stability of the electrode-electrolyte interface and thereby extending battery cyclability and lifetime. Reported within, sodium fluoride (NaF) thin films were synthesized via atomic layer deposition. NaF growth experiments were carried out at reactor temperatures between 175 and 250 °C using sodium tert-butoxide and HF-pyridine solution. Here, the optimal deposition temperature range was 175–200 °C, and the resulting NaF films exhibited low roughness (R q ≈ 1.6 nm for films of ~8.5 nm), nearly stoichiometric composition (Na:F = 1:1.05) and a growth per cycle value of 0.85 Å/cycle on SiO 2 substrates. These results are encouraging for future applications of NaF thin films in the development of improved energy capture and storage technologies.

25 ENERGY STORAGE↗