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Label, Kenneth A.

Publications and source records attributed to Label, Kenneth A..

39 records · Page 3

Heavy Ion Current Transients in SiGe HBTs

Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

Pellish, Jonathan A.

IC and Component Selection for Space Systems

This viewgraph presentation reviews the integrated circuit (IC) and selections of the IC components for space systems. Included in the discussion are a overview of semiconductors and the evolution of integrated circuit. It also reviews the three different viewpoints of the IC selection: technical, programmatic, and risk. From a radiation perspective there are four criteria for selecting ICs for space systems: guaranteed hardness, historical ground-based data, historical flight usage, and unknown assurance.

Label, Kenneth A.

Single event test methodology for integrated optoelectronics

A single event upset (SEU), defined as a transient or glitch on the output of a device, and its applicability to integrated optoelectronics are discussed in the context of spacecraft design and the need for more than a bit error rate viewpoint for testing and analysis. A methodology for testing integrated optoelectronic receivers and transmitters for SEUs is presented, focusing on the actual test requirements and system schemes needed for integrated optoelectronic devices. Two main causes of single event effects in the space environment, including protons and galactic cosmic rays, are considered along with ground test facilities for simulating the space environment.

Label, Kenneth A.