Engineering topics

Ladany, Ivan

Publications and source records attributed to Ladany, Ivan.

4 records

NASA NTRS1991

Lateral-Grating DFB Laser

Novel distributed-feedback (DFB) laser design achieves improved wavelength discrimination and increased coupling. Structure offers several significant advantages; greatly improved spectrum discrimination achieved, making it possible to obtain narrow beam, even from relatively wide laser structure. Different effects obtained, depending on whether grating interacts with mode of lowest or higher order. Such improved performance characteristics as better wavelength discrimination and increased coupling achieved because grating interacts with both sides of wave.

Andrews, James T.↗

NASA NTRS1989

Electro-optic device having a laterally varying region

A distributed feedback laser comprising a semiconductor body having a channel which varies in width in the laterial direction and is periodic in the longitudinal direction. When the laser is electrically excited constructive interference of reflected light gives rise to a stable single wavelength output due to the periodic variations in the channel.

Andrews, James T.↗

NASA NTRS1987

Laser materials for the 0.67-microns to 2.5-microns range

Basic requirements for obtaining injection laser action in III-V semiconductors are discussed briefly. A detailed review is presented of materials suitable for lasers emitting at 0.67, 1.44, 1.93, and 2.5 microns. A general approach to the problem is presented, based on curves of materials properties published by Sasaki et al. It is also shown that these curves, although useful, may need correction in certain ranges. It is deduced that certain materials combinations, either proposed in the literature or actually tried, are not appropriate for double heterostructure lasers, because the refractive index of the cladding material is higher than the index of the active material, thus resulting in no waveguiding, and high threshold currents. Recommendations are made about the most promising approach to the achievement of laser action in the four wavelengths mentioned above.

Toda, Minoru↗

NASA NTRS1978

Degradation resistance of semiconductor electroluminescent devices

The P type conductivity layer or layers of an electroluminescent device includes zinc as the primary conductivity modifier, and germanium as the secondary conductivity modifier. The combination of zinc and germanium provide an electroluminescent device having improved reliability. In the method of fabricating the P type conductivity layer, the zinc and germanium are simultaneously introduced into the layer during deposition of the layer.

Ladany, Ivan↗