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Lambrecht, W. R. L.

Publications and source records attributed to Lambrecht, W. R. L..

Unoccupied electronic resonances of Sc adsorbed on W(001) by k-resolved inverse photoemission

Scandium adsorbed on the (001) face of tungsten has been studied using Auger-electron spectroscopy, low-energy electron diffraction, k-resolved inverse photoelectron spectroscopy, work-function measurements, and relativistic-electronic-structure calculations. We find that the work function of W(001) does not decrease monotonically as a function of scandium adsorption but reaches a minimum value of Phi = 3.25 eV at 50% coverage. For a complete monolayer, an order 1 X 1 Sc overlayer is formed. Inverse photoemission in the isochromat mode was used to map the unoccupied energy levels of this overlayer along the bar-Gamma(bar-Mu) symmetry direction of the surface Brillouin zone. Local-density-functional calculations using the muffin-tin orbital method were performed for a 1 X 1 Sc overlayer on W and are compared with the experimental two-dimensional band structure.

Lamouri, A.↗

'Wrong' bond interactions at inversion domain boundaries in GaAs

Electronic structure calculations of GaAs inversion-domain boundaries (IDBs) on different planes are reported. The resulting interface energies are analyzed in terms of the number of 'wrong' bonds (Ga-Ga and As-As) and their mutual compensation. The compensation energy varies roughly inversely proportionally to the distance between the wrong bonds. This favors local compensation in stoichiometric material. This automatically occurs for 110-plane planes or by chemical reconstruction for other planes. Ga-rich IDBs are predicted to have low energy in either Ga-rich or n-type material.

Lambrecht, W. R. L.↗