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Landen D Ryder

Publications and source records attributed to Landen D Ryder.

17 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS2023

An Examination of Heavy Ion-Induced Persistent Visual Error Signatures in an Electronic Display Driver Integrated Circuit

Given the ubiquity of electronic displays integration in human-based systems, the impending mission critical, space-based applications of electronic displays will necessitate SEE assessment of components unique to electronic displays. A commercially available DDIC designed to drive a small form factor organic light emitting diode (OLED) was visually monitored during heavy ion irradiation to catalogue radiation induced persistent visual error signatures that require manual intervention (i.e., power cycling) to return to nominal function. These error signatures were able to be reproduced via modification of configuration register values utilizing the instruction set intended for interfacing a microcontroller with the DDIC. This approach to emulation of heavy-ion induced errors on a table-top assists with human perception-based criticality analysis as well as development of mitigation techniques.

Electronic Displays↗
NASA NTRS2023

An Examination of Heavy Ion-Induced Persistent Visual Error Signatures in an Electronic Display Driver Integrated Circuit

Heavy ion irradiation of a display driver integrated circuit (DDIC) was performed, and persistent visual error signatures were captured. Based on the heavy ion results, error signatures were localized to configuration registers motivate potential mitigation techniques and observations relating to single event effect susceptibility. DDICs serve as an integral component of integrated display systems that will require the development of single event effects test methodologies in anticipation of extensive use in crewed spacecrafts outside of the Earth’s geomagnetic protection.

Electronic Displays↗
NASA NTRS2023

C30665L CD3740 Displacement Damage and Total Ionizing Dose Test Report

The purpose of this testing is to provide preliminary characterization of the displacement damage and total ionizing dose effects via 63 MeV protons on InGaAs PIN photodiodes fabricated and assembled by Excelitas for use in a LIDAR system. The testing is being conducted to determine the susceptibility of the component to the radiation environment that it will be exposed to during mission duration.

Landen D Ryder↗
NASA NTRS2023

Ionizing Radiation Effects on Hole Collection Backside-Illuminated P-Type Deep-Trench Pinned Photo-MOS Pixels under Image Acquisition

Dark current degradation, origins, and annealing behavior after x-ray irradiation are studied in a P-type, hole collecting, backside-illuminated image sensor currently being developed at STMicroelectronics and based on deep-trenched photo-MOS pixels. Different biasing conditions during irradiation, i.e. grounded or biased and sequenced, are compared. The dark current increase with total ionizing dose (TID) and the dark current annealing behavior seem to be driven by the backside interface between the P-epitaxy of the pixels and the ONO stack. Despite still being under development, this pixel architecture already exhibits both very good electro-optical performance and a better radiation hardness than pinned photodiode-based CMOS Image sensors that benefit from the same advanced CIS processing technologies. At high total dose range, the photogate challenges custom Radiation-Hardened-by-Design photodiodes by exhibiting a comparable radiation tolerance while bringing new features such as high-resolution or Correlated Double Sampling.

CMOS Image Sensor (CIS)↗
NASA NTRS2022

Angle Dependence of Focused X-Ray-Induced Single Event Transients in an Epitaxial Silicon Diode

Focused X-Ray single event transient (SET) experiments are performed at small angles on an epitaxial silicon diode at two reverse bias conditions. For both biases, the collected charge and peak current results follow the cosine law, while the transient fall time remains independent of incident angle. This demonstrates that only the amount of charge being generated is affected by angle and not the fundamental device response for these relatively large devices.

Focused X-ray↗
NASA NTRS2021

Angle Dependence of Focused X-Ray-Induced Single Event Transients in an Epitaxial Silicon Diode

Focused X-Ray single event transient (SET) experiments are performed at small angles on an epitaxial silicon diode at two reverse bias conditions. For both biases, the collected charge and peak current results follow the cosine law, while the transient fall time remains independent of incident angle. This demonstrates that only the amount of charge being generated is affected by angle and not the fundamental device response.

Heavy ions↗
NASA NTRS2021

Comparison of Single-Event Transients in an Epitaxial Silicon Diode Resulting from Heavy Ion-, Focused X-Ray-, and Pulsed Laser-Induced Charge Generation

Heavy ion, focused X-ray, pulsed laser single event transient experiments are performed on a silicon epitaxial diode. Collected charge, transient rise times, and transient fall times are calculated and compared between the different sources. The transient shape characteristics depend on the source (ion, X-ray, or laser), even when similar amounts of charge are generated. The observed differences are examined and explained in terms of basic charge collection mechanisms.

Heavy ions↗
NASA NTRS2020

Single-Event Effect Testing of the Broadcom ACPL-785E Optocoupler

The purpose of this testing was to examine the potential for destructive single event effects (SEE) in Broadcom’s ACPL-785E optocoupler in support of a NASA GSFC flight program. SEE testing was conducted NASA Space Radiation Laboratory (NSRL) at Brookhaven National Laboratory where devices with unmodified packaging were irradiated with high energy ions that have sufficient range to pass through the packaging of the device.

Single Event Effects (SEE)↗
NASA NTRSDate not supplied

Displacement Damage Induced Dark Current and Random Telegraph Signal in P-Type Deep-Trench Pinned Photogates

This study focuses on displacement damage induced dark current and Random Telegraph Signal (RTS) in STMicroelectronics P-Type photogate, a device moving away from the 4T Pinned-Photodiode, with a sensitive volume exclusively made of boron-doped P-type epitaxy, and collecting holes instead of electrons. Results show a typical trend for the shape of dark current and RTS degradation in CMOS Image Sensors with the exception that the measured generation rates seem 2 times smaller than typical literature values in irradiated silicon. Different hypothesis on the origin of this discrepancy are explored.

displacement damage dose↗