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Lang, Robert J.

Publications and source records attributed to Lang, Robert J..

At least 19 records

Accommodating Thickness in Origami-Based Deployable Arrays

The purpose of this work is to create deployment systems with a large ratio of stowed-to-deployed diameter. Deployment from a compact form to a final flat state can be achieved through origami-inspired folding of panels. There are many models capable of this motion when folded in a material with negligible thickness; however, when the application requires the folding of thick, rigid panels, attention must be paid to the effect of material thickness not only on the final folded state, but also during the folding motion (i.e., the panels must not be required to flex to attain the final folded form). The objective is to develop new methods for deployment from a compact folded form to a large circular array (or other final form). This paper describes a mathematical model for modifying the pattern to accommodate material thickness in the context of the design, modeling, and testing of a deployable system inspired by an origami six-sided flasher model. The model is demonstrated in hardware as a 1/20th scale prototype of a deployable solar array for space applications. The resulting prototype has a ratio of stowed-to-deployed diameter of 9.2 (or 1.25 m deployed outer diameter to 0.136 m stowed outer diameter).

flasher

Frequency conversion system

Laser diode pumped mid-IR wavelength sources include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.

Sanders, Steven

Power enhanced frequency conversion system

A frequency conversion system includes at least one source providing a first near-IR wavelength output including a gain medium for providing high power amplification, such as double clad fiber amplifier, a double clad fiber laser or a semiconductor tapered amplifier to enhance the power output level of the near-IR wavelength output. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Ra-man/Brillouin amplifier or oscillator between the high power source and the NFM device.

Sanders, Steven

High power pumped MID-IR wavelength devices using nonlinear frequency mixing (NFM)

Laser diode pumped mid-IR wavelength sources include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.

Sanders, Steven

High power pumped mid-IR wavelength systems using nonlinear frequency mixing (NFM) devices

Laser diode pumped mid-IR wavelength systems include at least one high power, near-IR wavelength, injection and/or sources wherein one or both of such sources may be tunable providing a pump wave output beam to a quasi-phase matched (QPM) nonlinear frequency mixing (NFM) device. The NFM device may be a difference frequency mixing (DFM) device or an optical parametric oscillation (OPO) device. Wavelength tuning of at least one of the sources advantageously provides the ability for optimizing pump or injection wavelengths to match the QPM properties of the NFM device enabling a broad range of mid-IR wavelength selectivity. Also, pump powers are gain enhanced by the addition of a rare earth amplifier or oscillator, or a Raman/Brillouin amplifier or oscillator between the high power source and the NFM device. Further, polarization conversion using Raman or Brillouin wavelength shifting is provided to optimize frequency conversion efficiency in the NFM device.

Sanders, Steven

Wavelength-Division Multiplexing With Integrated Optics

High-density wavelength-division-multiplexed optoelectronic integrated circuits developed for use as transceivers in fiber-optic communications between computers, according to proposal. One of proposed multiplexer/demultiplexer units provides simultaneous communication on 32 wavelength channels at overall data rate greater than 40 Gb/s, increasing channel capacity, simplifying transmitting and receiving electronics and reducing delay by eliminating serial-to-parallel and parallel-to-serial "bottlenecks."

Lang, Robert J.

Aberration correction of unstable resonators

Construction of aspheric reflectors for unstable resonator lasers to provide an arbitrary laser mode inside the resonator to correct aberrations of an output beam by the construction of the shape of an end reflector opposite the output reflector of the resonator cavity, such as aberrations resulting from refraction of a beam exiting the solid of the resonator having an index of refraction greater than 1 or to produce an aberration in the output beam that will precisely compensate for the aberration of an optical train into which the resonator beam is coupled.

Lang, Robert J.

Wavelength-division multiplexed optical integrated circuit with vertical diffraction grating

A semiconductor optical integrated circuit for wave division multiplexing has a semiconductor waveguide layer, a succession of diffraction grating points in the waveguide layer along a predetermined diffraction grating contour, a semiconductor diode array in the waveguide layer having plural optical ports facing the succession of diffraction grating points along a first direction, respective semiconductor diodes in the array corresponding to respective ones of a predetermined succession of wavelengths, an optical fiber having one end thereof terminated at the waveguide layer, the one end of the optical fiber facing the succession of diffraction grating points along a second direction, wherein the diffraction grating points are spatially distributed along the predetermined contour in such a manner that the succession of diffraction grating points diffracts light of respective ones of the succession of wavelengths between the one end of the optical fiber and corresponding ones of the optical ports.

Lang, Robert J.

Time-multiplexed, optically-addressed, gigabit optical crossbar switch

A time-multiplexed, optically-addressed, crossbar switch (38) is provided using a two-dimensional, optically-addressed, reflective spatial light modulator (O-SLM) (20). Since the optical addressing is time-multiplexed, only N addressing lines are required for an N.times.N crossbar, rather than the N.sup.2 lines needed in the prior art. This reduction in addressing lines makes possible the development of enormous crossbar switches, such as 100.times.100, for the first time. In addition, since data paths remain entirely in the optics domain, data speeds can reach the multi-gigabit level. In the switch, a row (40) of N inputs (42) at the read wavelength is spread over one axis of the O-SLM. The light is refocused along the other axis to an output array (48) of detectors (50), so that each input has the potential to talk to any one output. The O-SLM is normally off, i.e., non-reflective, so that the output is, in the absence of an input signal, zero. A one-dimensional array (52) of lasers (54) at the write wavelength is imaged onto the O-SLM. Each laser scans across an entire row of the O-SLM; where the laser is on, it turns on a portion of the O-SLM and establishes a connection between a particular input and a particular output. A full row is scanned in a time much shorter than the response time of the O-SLM, so that state of the O-SLM is capacitively stored and dynamically refreshed. The scanning is accomplished by tuning the wavelength of the laser and passing it through a grating, which sweeps the beam in space.

Lang, Robert J.

In(X)Ga(1-X) As Strain-Layer Multiple-Quantum-Well Laser Diodes

Fabricated on InP substrates, devices operate at room temperature, emitting at wavelengths near 1.8 micrometers. By suitable modification of structure of devices, possible to achieve operation at any wavelength from 1.6 to 2.5 micrometers: this range important in lidar and in remote sensing of atmospheric gases. Quantum-well and barrier layers sandwiched between two 60-nm-thick layers of lattice-matched InGaAs. InGaAs layers sandwiched between two 150-nm-thick layers of InGaAsP. Those layers sandwiched, in turn, between InP substrate and InP cladding layer. Also layer of InGaAs atop InP cladding layers.

Forouhar, Siamak

Unstable-Resonator Oscillator/Amplifier Diode Laser

Fabricated as single-chip integrated circuit. Device based partly on concept proved in commercial solid-state lasers: using unstable-resonator oscillator to define electromagnetic mode and, following oscillator, traveling-wave amplifier to generate high power. Mode-definition and power-amplification functions optimized separately. Hyperbolic-grating, unstable-resonator oscillator/amplifier diode laser produces single-longitudinal-mode, broad, laterally coherent, diffraction-limited, high-power beam.

Lang, Robert J.

Designing Aberration-Corrected Solid Unstable Resonators

In improved method of designing solid unstable resonator of laser diode, shapes of mirrors calculated to yield specified mode. Ray tracing used to compute shape of initially unspecified end mirror, given shape of initially specified end mirror and specified output mode. No need to accept aberrations or suboptimal circular shapes, to make iterative design computations in effort to converge on desired mode, or to assume paraxiality of rays: Angles between rays and optical axis large, cross sections of surfaces noncircular, and computed shape of end mirror exact. End mirror corrects for all aberrations.

Lang, Robert J.

Satellite Communications Applications Research

This report describes work performed by SDL in the development of monolithically-integrated master oscillator power amplifiers under the NASA-SCAR research contract. The goals of the program were to demonstrate high power diffraction-limited operation from a semiconductor laser with the following characteristics: (1) Output power of 0.5 to 1.0 W continuous-wave (cw); (2) Single spectral mode with greater than 20 dB of side mode suppression; (3) Single spatial mode operation; (4) Modulation capability of 0.5 GHz; and (5) Operating wavelength between 830-860 nm. Cw diffraction-limited output powers as high as 2.2 W were achieved while maintaining a single longitudinal mode. Side mode suppression ratios greater than 20 dB are typically obtained. The single spatial mode output has a Strehl ratio estimated at 0.85, and a high-speed modulation capability was demonstrated with a small-signal 3-dB roll-off at 1.0 GHz. Finally, all of this performance was obtained in the 860 nm wavelength band, which corresponds to the peak sensitivity of Si detectors. During the first option period, three deliverables were fabricated and delivered that included 1 distributed Bragg reflector (DBR) laser operating at 970 nm, 1 DBR laser operating at 860 nm, and one monolithic flared amplifier master oscillator power amplifier (MFA-MOPA) providing 0.5 W cw diffraction-limited output. During the second option period, a total of 5 MFA-MOPA devices were delivered, each operating to better than 1 W cw diffraction-limited at 860 nm.

Lang, Robert J.

Strained layer InP/InGaAs quantum well laser

Strained layer single or multiple quantum well lasers include an InP substrate, a pair of lattice-matched InGaAsP quarternary layers epitaxially grown on the substrate surrounding a pair of lattice matched In.sub.0.53 Ga.sub.0.47 As ternary layers surrounding one or more strained active layers of epitaxially grown, lattice-mismatched In.sub.0.75 Ga.sub.0.25 As. The level of strain is selected to control the bandgap energy to produce laser output having a wavelength in the range of 1.6 to 2.5 .mu.m. The multiple quantum well structure uses between each active layer. Diethyl zinc is used for p-type dopant in an InP cladding layer at a concentration level in the range of about 5.times.10.sup.17 /cm.sup.3 to about 2.times.10.sup.18 /cm.sup.3. Hydrogen sulfide is used for n-type dopant in the substrate.

Forouhar, Siamak

Self-collimated unstable resonator semiconductor laser

Self-collimation of the output is achieved in an unstable resonator semiconductor laser by providing a large concave mirror M sub 1 and a small convex mirror M sub 2 on opposite surfaces of a semiconductor body of a material having an effective index of refraction denoted by n, where the respective mirror radii R sub 1, R sub 2 and beam radii r sub 1, r sub 2 are chosen to satisfy a condition (R sub 2)/(1 + r sub 1) = (n - 1)/n, with a value of geometric magnification 1 less than or equal to M less than or equal to (n + 1)/(n - 1) where r sub 1 and r sub 2 are the radii of counterpropagating beams at respective mirrors of radii R sub 1 and R sub 2.

Lang, Robert J.

Design of aberrationless aspheric unstable resonators

We present a method for designing aspheric mirrors for unstable-resonator lasers to yield an arbitrary laser mode inside the resonator. Both analytical and numerical examples are given of aberration-compensated resonators, including solid resonators whose modes on refraction through the output coupler have identical zero spherical aberration.

Lang, Robert J.

Multiperiod-grating surface-emitting lasers

Surface-emitting distributed feedback (DFB) lasers are disclosed with hybrid gratings. A first-order grating is provided at one or both ends of the active region of the laser for retroreflection of light back into the active region, and a second-order or nonresonant grating is provided at the opposite end for coupling light out perpendicular to the surfaces of the laser or in some other selected direction. The gratings may be curved to focus light retroreflected into the active region and to focus light coupled out to a point. When so focused to a point, the DFB laser may be part of a monolithic read head for a laser recorded disk, or an optical coupler into an optical fiber.

Lang, Robert J.

Self-Collimating Unstable-Resonator Diode Lasers

Proposed unstable-resonator diode lasers produce solid, collimated output beams without external collimating optics. Simpler to construct, used as pumps for optical-fiber amplifiers in telecommunications, for other solid-state lasers, and sources of light for free-space communications.

Lang, Robert J.