A 20-GHz IMPATT diode development
The development of 20 GHz, double drift GaAs IMPATT diodes is described. Advances made in material growth, diodes fabrication technology and packaging, and circuit design and diode testing are documented.
Masse, D.↗
Engineering topics
Lauterwasser, B. D.
Publications and source records attributed to Lauterwasser, B. D..