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Leadon, R. E.

Publications and source records attributed to Leadon, R. E..

Internal electrostatic discharge hazard risk assessment to the Galileo orbiter

A worst case assessment was performed on the Command Data System (CDS) multilayer printed circuit board and an output power transformer module in the power subsystem. An estimate of the Jovian environment during the 35 hour orbit insertion was supplied by JPL and used as an input to calculate the electron transport into the Galileo components. A radiation shielding analysis computer code, CHARGE, calculated the electron transport deposition trapped in the anticipated sensitive areas of the multilayer board and transformer module. Based on these trapped charge calculations electric fields were calculated between the identified isolated areas and the spacecraft ground. The results of the assessment of electrostatic discharge (DSD) in the CDS multilayer printed circuit board indicate that the probability of ESD in the FR4 is low. The probability of ESD in the components attached to the multilayer board, however, is uncertain based on a lack of prior experimental data.

Schmidt, R. E.↗

Model of coupling discharges into spacecraft structures

The calculated results of a semiempirical model for electron-caused electromagnetic pulse (ECEMP) are compared to the experimental data for three spacecraft geometries. The appropriateness of certain model assumptions which have been employed in the absence of a microscopic theory for dielectric breakdown and associated electron blowoff is discussed. Results are limited to the exterior response of spacecraft structures, although neither the model nor the experiments were limited to the outside problem. Rationales for model assumptions are provided.

Woods, A. J.↗

Experimental and computer studies of the radiation effects in silicon solar cells

A summary of selected experimental results obtained on lithium-diffused bulk silicon is presented. Particular emphasis is placed on the radiation-induced degradation and thermal annealing of minority carriers in bulk silicon because solar cell output is related to the minority carrier lifetime. The temperature dependence of the minority carrier lifetime indicates the density and energy levels of the recombination centers and provides clues to their identity. Electron spin resonance and infrared absorption techniques are used to investigate the introduction and anneal of three specific radiation induced defects, which are thought to contribute to the recombination process.

Leadon, R. E.↗