Engineering topics
Publications and source records attributed to Lee, Choonsup.
Single-pixel heterodyne receivers are severely limited in their capability to map large areas on the sky. We report on the development of THz multi-pixel local oscillator sources that ought to enable THz array receivers of the future. We demonstrate a prototype 16-pixel chain at 1.9 THz. Output power in excess of >10 microwatts has been demonstrated per pixel from this compact chain.
A silicon alignment pin is used to align successive layer of component made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.
A solid state device chip including diodes (generating a higher frequency output through frequency multiplication of the input frequency) and a novel on-chip power combining design. Together with the on-chip power combining, the chip has increased efficiency because the diodes' anodes, being micro-fabricated simultaneously on the same patch of a GaAs wafer under identical conditions, are very well balanced. The diodes' GaAs heterostructure and the overall chip geometry are designed to be optimized for high power operation. As a result of all these features, the device can generate record-setting power having a signal frequency in the F-band and W-band (30% conversion efficiency).
In this paper we present an overview of different antenna technologies for space-based instruments. We show that some of the designs that work well at gigahertz frequencies are difficult to implement at terahertz frequencies due to tight tolerance and rms surface finish requirements. We also show that antenna designs are dictated not only by the frequency of operations but also by the space platform of choice. In this paper, we also present ideas for low-profile terahertz antennas for implementation on SmallSat and CubeSat platforms.
A multi-pixel terahertz transceiver is constructed using a stack of semiconductor layers that communicate using vias defined within the semiconductor layers. By using a stack of semiconductor layers, the various electrical functions of each layer can be tested easily without having to assemble the entire transceiver. In addition, the design allows the production of a transceiver having pixels set 10 mm apart.
Using newly developed silicon micromachining technology that enables low-loss and highly integrated packaging solutions, we are developing vertically stacked transmitters and receivers at terahertz frequencies that can be used for communication and other terahertz systems. Although there are multiple ways to address the problem of interconnect and packaging solutions at these frequencies, such as system-on-package (SOP), multi-chip modules (MCM), substrate integrated waveguide (SIW), liquid crystal polymer (LCP) based multilayer technologies, and others, we show that deep reactive ion etching (DRIE) based silicon micromachining with vertical integration allows the most effective solutions at terahertz frequencies.
We present results from a 4x1-pixel 1.9 THz heterodyne array for the astrophysically important [CII] spectral line. A 4-pixel multiplier chain at 1.9 THz, with a compact spacing of 5 mm, is used as an LO. Receiver performance is verified by y-factor measurements with measured sensitivities of 900 K. Finally, using a coherent source near the target frequency of 1.9 THz, we down convert to baseband and measure spectra with both an IBOB and a new CMOS-based spectrometer. The CMOS spectrometer provides several advantages over more traditional spectrometers because of its compact size and low power consumption. This receiver prototype is easily scalable to other frequencies and larger focal plane arrays. Furthermore, because of its compact configuration, it can be easily packaged for orbital or sub-orbital missions.
A silicon alignment pin is used to align successive layers of components made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.
A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.
Obtaining temperature, pressure, and composition profiles along with wind velocities in the Earth's thermosphere/ionosphere system is a key NASA goal for understanding our planet. We report on the status of a technology development effort to build an all-solid-state heterodyne receiver at 2.06 terahertz that will allow the measurement of the 2.06 terahertz [OI] line for altitudes greater than 100 kilometers. The receiver front end features low-parasitic Schottky diode mixer chips that are driven by a local oscillator (LO) source using Schottky diode based multipliers. The multiplier chain consists of a 38 gigahertz oscillator followed by a set of three cascaded triplers at 114 gigahertz, 343 gigahertz and 1.03 terahertz.
In this work, we describe new miniaturized low noise amplifier modules which we developed for incorporation in small-scale satellites or Cubesats, and which exhibit similar or better performance compared to previously reported LNAs in the literature. We have targeted the WR4 (170-260 GHz) and WR3 (220-325 GHz) waveguide bands for the module development. The modules include two different methods of E-plane probes which have been developed for low loss, and stability at high frequencies. MMIC LNAs were also developed for these frequency ranges and fabricated in Northrop Grumman Corporation's 35 nm InP HEMT technology, and we have experimentally verified that noise performance is lower than reported in prior work. The best results include a miniature LNA module with 550K noise at 224 GHz, and a wideband LNA module with 15 dB gain from 230-280 GHz.
A novel MMIC on-chip power-combined frequency multiplier device and a method of fabricating the same, comprising two or more multiplying structures integrated on a single chip, wherein each of the integrated multiplying structures are electrically identical and each of the multiplying structures include one input antenna (E-probe) for receiving an input signal in the millimeter-wave, submillimeter-wave or terahertz frequency range inputted on the chip, a stripline based input matching network electrically connecting the input antennas to two or more Schottky diodes in a balanced configuration, two or more Schottky diodes that are used as nonlinear semiconductor devices to generate harmonics out of the input signal and produce the multiplied output signal, stripline based output matching networks for transmitting the output signal from the Schottky diodes to an output antenna, and an output antenna (E-probe) for transmitting the output signal off the chip into the output waveguide transmission line.
An antenna element suitable for integrated arrays at terahertz frequencies is disclosed. The antenna element comprises an extended spherical (e.g. hemispherical) semiconductor lens, e.g. silicon, antenna fed by a leaky wave waveguide feed. The extended spherical lens comprises a substantially spherical lens adjacent a substantially planar lens extension. A couple of TE/TM leaky wave modes are excited in a resonant cavity formed between a ground plane and the substantially planar lens extension by a waveguide block coupled to the ground plane. Due to these modes, the primary feed radiates inside the lens with a directive pattern that illuminates a small sector of the lens. The antenna structure is compatible with known semiconductor fabrication technology and enables production of large format imaging arrays.
A coplanar waveguide (CPW) based subharmonic mixer working at 670 GHz using GaAs Schottky diodes. One example of the mixer has a LO input, an RF input and an IF output. Another possible mixer has a LO input, and IF input and an RF output. Each input or output is connected to a coplanar waveguide with a matching network. A pair of antiparallel diodes provides a signal at twice the LO frequency, which is then mixed with a second signal to provide signals having sum and difference frequencies. The output signal of interest is received after passing through a bandpass filter tuned to the frequency range of interest.
Waveguide component technology at terahertz frequencies has come of age in recent years. Essential components such as ortho-mode transducers (OMT), quadrature hybrids, filters, and others for high performance system development were either impossible to build or too difficult to fabricate with traditional machining techniques. With micromachining of silicon wafers coated with sputtered gold it is now possible to fabricate and test these waveguide components. Using a highly optimized Deep Reactive Ion Etching (DRIE) process, we are now able to fabricate silicon micromachined waveguide structures working beyond 1 THz. In this paper, we describe in detail our approach of design, fabrication, and measurement of silicon micromachined waveguide components and report the results of a 1 THz canonical E-plane filter.
Submillimeter heterodyne instruments play a critical role in addressing fundamental questions regarding the evolution of galaxies as well as being a crucial tool in planetary science. To make these instruments compatible with small platforms, especially for the study of the outer planets, or to enable the development of multi-pixel arrays, it is essential to reduce the mass, power, and volume of the existing single-pixel heterodyne receivers. Silicon micromachining technology is naturally suited for making these submillimeter and terahertz components, where precision and accuracy are essential. Waveguide and channel cavities are etched in a silicon bulk material using deep reactive ion etching (DRIE) techniques. Power amplifiers, multiplier and mixer chips are then integrated and the silicon pieces are stacked together to form a supercompact receiver front end. By using silicon micromachined packages for these components, instrument mass can be reduced and higher levels of integration can be achieved. A method is needed to assemble accurately these silicon pieces together, and a technique was developed here using etched pockets and silicon pins to align two wafers together.
Heterodyne receivers at submillimeter wavelengths have played a major role in astrophysics as well as Earth and planetary remote sensing. All-solid-state heterodyne receivers using both MMIC (monolithic microwave integrated circuit) Schottky-diode-based LO (local oscillator) sources and mixers are uniquely suited for long-term planetary missions or Earth climate monitoring missions as they can operate for decades without the need for any active cryogenic cooling. However, the main concern in using Schottky-diode-based mixers at frequencies beyond 1 THz has been the lack of enough LO power to drive the devices because 1 to 3 mW are required to properly pump Schottky diode mixers. Recent progress in HEMT- (high-electron-mobility- transistor) based power amplifier technology, with output power levels in excess of 1 W recently demonstrated at W-band, as well as advances in MMIC Schottky diode circuit technology, have led to measured output powers up to 1.4 mW at 0.9 THz. Here the first room-temperature tunable, all-planar, Schottky-diode-based receiver is reported that is operating at 1.2 THz over a wide (≈20%) bandwidth. The receiver front-end (see figure) consists of a Schottky-diode-based 540 to 640 GHz multiplied LO chain (featuring a cascade of W-band power amplifiers providing around 120 to 180 mW at W-band), a 200-GHz MMIC frequency doubler, and a 600-GHz MMIC frequency tripler, plus a biasable 1.2-THz MMIC sub-harmonic Schottky-diode mixer. The LO chain has been designed, fabricated, and tested at JPL and provides around 1 to 1.5 mW at 540 o 640 GHz. The sub-harmonic mixer consists of two Schottky diodes on a thin GaAs membrane in an anti-parallel configuration. An integrated metal insulator metal (MIM) capacitor has been included on-chip to allow dc bias for the Schottky diodes. A bias voltage of around 0.5 V/diode is necessary to reduce the LO power required down to the 1 to 1.5 mW available from the LO chain. The epilayer thickness and doping profiles have been specifically optimized to maximize the mixer performance beyond 1 THz. The measured DSB noise temperatures and conversion losses of the receiver are 2,000 to 3,500 K and 12 to 14 dB, respectively, at 120 K, and 4,000 to 6,000 K and 13 to 15 dB, respectively, at 300 K. These results establish the state-of-the-art for all-solid-state, all-planar heterodyne receivers at 1.2 THz operating at either room temperature or using passive cooling only. Since no cryogenic cooling is needed, the receiver is eminently suited to atmospheric heterodyne spectroscopy of the outer planets and their moons.