Magnetic Fluctuations as a Potential Source of Losses in Superconducting Quantum Devices
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Engineering topics
Publications and source records attributed to Lee, Jae-Yel.
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With massive improvements in device coherence times and gate fidelity over the past two decades, superconducting quantum devices have emerged as a leading technology platform for next generation quantum computing. While many of these improvements have been driven through optimized device designs and geometries, the presence of defects, impurities, interfaces, and surfaces in the constituent materials continue to limit performance and present a critical barrier in achieving scalable quantum systems with long coherence times. As part of the Superconducting Quantum Materials and Systems (SQMS) center, we have applied state-of-the-art materials characterization techniques, such as scanning/transmission electron microscopy, secondary ion mass spectrometry, and atom probe tomography, to identify structural defects and chemical inhomogeneities in superconducting qubits. In this review, we discuss the findings of these efforts as they relate to the inherent surfaces, interfaces, impurities, and defects in superconducting qubits. Through this comprehensive investigation, we provide insight into possible sources of dissipation in these systems. Further, we supplement these findings with potential strategies for mitigating these undesired features in an effort to systematically and intelligently improve the coherence times of superconducting qubits.
Atom Probe Tomography allows for uniquely characterizing the chemical content of Superconducting Materials. In this poster, we discuss advantages of this technique.
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Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of μs, material quality and interfacial structures continue to curb device performance. Two-level system defects in the thin superconducting film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated through slight modifications in the processing and vacuum conditions. We find that when the Nb film is sputtered onto the Si substrate, oxide and silicide regions are generated at various interfaces. We also observe that impurity species, such as niobium hydrides and carbides, are incorporated within the niobium layer during the subsequent lithographic patterning steps. The formation of these resistive compounds likely impacts the superconducting properties of the Nb thin film. Additionally, we observe the presence of halogen species distributed throughout the patterned thin films. We conclude by hypothesizing the source of such impurities in these structures in an effort to intelligently fabricate superconducting qubits and extend coherence times moving forward.
In this paper, we report achievement of non-Cu-matrix critical current density $(J_c)$ in internally-oxidized Nb 3 Sn superconductors that surpasses the best state-of-the-art Nb 3 Sn and the $J_c$ specification of the Future Circular Collider. We then explore the mechanism of the improvement, which was believed to be caused by refined grain size. However, our experiment showed that even with similar grain size, internally-oxidized wires had significantly higher $J_c$ than non-oxidized wires. This, combined with transmission electron microscopy and atom probe tomography studies which showed a high density of intragranular nano-precipitates with suitable sizes as pinning centers in internally-oxidized wires, demonstrates a significant contribution from the nano-precipitates.