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Lee, Woochul

Publications and source records attributed to Lee, Woochul.

11 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Ion Write Microthermotics: Programing Thermal Metamaterials at the Microscale

Considerable advances in manipulating heat flow in solids have been made through the innovation of artificial thermal structures such as thermal diodes, camouflages, and cloaks. Such thermal devices can be readily constructed only at the macroscale by mechanically assembling different materials with distinct values of thermal conductivity. Here in this paper, we extend these concepts to the microscale by demonstrating a monolithic material structure on which nearly arbitrary microscale thermal metamaterial patterns can be written and programmed. It is based on a single, suspended silicon membrane whose thermal conductivity is locally, continuously, and reversibly engineered over a wide range (between 2 and 65 W/m·K) and with fine spatial resolution (10-100 nm) by focused ion irradiation. Our thermal cloak demonstration shows how ion-write microthermotics can be used as a lithography-free platform to create thermal metamaterials that control heat flow at the microscale.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Phase-transition–induced p-n junction in single halide perovskite nanowire

Significance Functional semiconductor heterojunctions are fundamental units for building up advanced optoelectronics and circuits. Halide perovskites, representing a new class of semiconductors with soft and reconfigurable ionic bonding, hold promise for a variety of applications because of their many unusual, tunable physical properties. This paper reports the formation of the current-rectifying p-n heterojunction in single-crystalline CsSnI 3 nanowires via localized phase transition between the n-type yellow and p-type black phases. We attribute the distinction of majority carrier types in these two phases to the different formation energies of the cation and anion vacancies. The present approach to heterojunction formation could inspire deeper understanding of phase-transition dynamics and enable precise control over the design of functional heterostructures using halide perovskite building blocks.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Electrical and Optical Tunability in All-Inorganic Halide Perovskite Alloy Nanowires

Alloying different semiconductors is a powerful approach to tuning the optical and electronic properties of semiconductor materials. In halide perovskites (ABX 3 ), alloys with different anions have been widely studied, and great band gap tunability in the visible range has been achieved. However, perovskite alloys with different cations at the "B" site are less understood due to the synthetic challenges. Herein, we first have developed the synthesis of single-crystalline CsPb x Sn 1- x I 3 nanowires (NWs). The electronic band gaps of CsPb x Sn 1- x I 3 NWs can be tuned from 1.3 to 1.78 eV by varying the Pb/Sn ratio, which leads to the tunable photoluminescence (PL) in the near-infrared range. More importantly, we found that the electrical conductivity increases as more Sn 2+ is alloyed with Pb 2+ , possibly due to the increase of charge carrier concentration when more Sn 2+ is introduced. The wide tunability of the optical and electronic properties makes CsPb x Sn 1-x I 3 alloy NWs promising candidates for future optoelectronic device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Ultralow thermal conductivity in all-inorganic halide perovskites

Significance Discovery of materials with low thermal conductivity in simple, fully dense, and single-crystalline solids has proven extremely challenging. This paper reports the discovery of ultralow thermal conductivity (∼0.4 W⋅m −1 ⋅K −1 ) in single-crystalline, all-inorganic halide perovskite nanowires, which is comparable to their amorphous limit value. We attribute ultralow thermal conductivity to a cluster rattling mechanism, based on strong phonon–phonon scattering via the coexistence of collective motions involving various atom groups. These results call attention to the vital thermal transport processes and thermal management strategies for applications with all-inorganic halide perovskites. Further, CsSnI 3 shows a rare combination of ultralow thermal conductivity and high electrical conductivity, so it can be a promising material for unique applications as an electrically conductive thermal insulator.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Investigation of phonon coherence and backscattering using silicon nanomeshes

Phonons can display both wave-like and particle-like behaviour during thermal transport. While thermal transport in silicon nanomeshes has been previously interpreted by phonon wave effects due to interference with periodic structures, as well as phonon particle effects including backscattering, the dominant mechanism responsible for thermal conductivity reductions below classical predictions still remains unclear. Here we isolate the wave-related coherence effects by comparing periodic and aperiodic nanomeshes, and quantify the backscattering effect by comparing variable-pitch nanomeshes. We measure identical (within 6% uncertainty) thermal conductivities for periodic and aperiodic nanomeshes of the same average pitch, and reduced thermal conductivities for nanomeshes with smaller pitches. Ray tracing simulations support the measurement results. We conclude phonon coherence is unimportant for thermal transport in silicon nanomeshes with periodicities of 100 nm and higher and temperatures above 14 K, and phonon backscattering, as manifested in the classical size effect, is responsible for the thermal conductivity reduction.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Thermal Transport in Silicon Nanowires at High Temperature up to 700 K

Thermal transport in silicon nanowires has captured the attention of scientists for understanding phonon transport at the nanoscale, and the thermoelectric figure-of-merit (ZT) reported in rough nanowires has inspired engineers to develop cost-effective waste heat recovery systems. Thermoelectric generators composed of silicon target high-temperature applications due to improved efficiency beyond 550 K. However, there have been no studies of thermal transport in silicon nanowires beyond room temperature. High-temperature measurements also enable studies of unanswered questions regarding the impact of surface boundaries and varying mode contributions as the highest vibrational modes are activated (Debye temperature of silicon is 645 K). Here, we develop a technique to investigate thermal transport in nanowires up to 700 K. Furthermore, our thermal conductivity measurements on smooth silicon nanowires show the classical diameter dependence from 40 to 120 nm. In conjunction with Boltzmann transport equation, we also probe an increasing contribution of high-frequency phonons (optical phonons) in smooth silicon nanowires as the diameter decreases and the temperature increases. Thermal conductivity of rough silicon nanowires is significantly reduced throughout the temperature range, demonstrating a potential for efficient thermoelectric generation (e.g., ZT = 1 at 700 K).

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Quantification of thermal and contact resistances of scanning thermal probes

Scanning thermal probes are widely used for imaging temperature fields with nanoscale resolution, for studying near-field radiative heat transport and for locally heating samples. In all these applications, it is critical to know the thermal resistance to heat flow within the probe and the thermal contact resistance between the probe and the sample. Here, we present an approach for quantifying the aforementioned thermal resistances using picowatt resolution heat flow calorimeters. The measured contact resistance is found to be in good agreement with classical predictions for thermal contact resistance. The techniques developed here are critical for quantitatively probing heat flows at the nanoscale.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Characterization of nanoscale temperature fields during electromigration of nanowires

Quantitative studies of nanoscale heat dissipation (Joule heating) are essential for advancing nano-science and technology. Joule heating is widely expected to play a critical role in accelerating electromigration induced device failure. However, limitations in quantitatively probing temperature fields—with nanoscale resolution—have hindered elucidation of the role of Joule heating in electromigration. In this work, we use ultra-high vacuum scanning thermal microscopy to directly quantify thermal fields in nanowires during electromigration. Our results unambiguously illustrate that electromigration begins at temperatures significantly lower than the melting temperature of gold. Further, we show that during electromigration voids predominantly accumulate at the cathode resulting in both local hot spots and asymmetric temperature distributions. These results provide novel insights into the microscopic details of hot spot evolution during electromigration and are expected to guide the design of reliable nanoscale functional devices.

36 MATERIALS SCIENCE↗