Engineering topics

Lehoczky, S. L.

Publications and source records attributed to Lehoczky, S. L..

At least 37 records · Page 2

NASA NTRS2002

Technique for Determining the Viscosity and Electrical Conductivity of Semiconducting Liquids

A novel apparatus for determining the viscosity and electrical conductivity of semiconducting liquids has been developed at NASA/MSFC. The apparatus is based on the transient torque technique and utilizes a 125 micrometer diameter quartz fiber as a torsion wire and a sensitive angular detector to measure the deflection angle of the crucible containing the liquid. A rotating flow is induced in the semiconducting melt by the application of a rotating magnetic field and measurement of the magnitude and transient behavior of the induced deflection angle allows the simultaneous determination of the viscosity and electrical conductivity of the melt. Measurements at room temperature and up to 900 C were made on high purity melts.

Li, C.↗

NASA NTRS2002

Carbon Nanotubes Growth by CVD on Graphite Fibers

Due to the superior electrical and mechanical properties of carbon nanotubes (CNT), synthesizing CNT on various substances for electronics devices and reinforced composites have been engaged in many efforts for applications. This presentation will illustrate CNT synthesized on graphite fibers by thermal CVD. On the fiber surface, iron nanoparticles as catalysts for CNT growth are coated. The growth temperature ranges from 600 to 1000 C and the pressure ranges from 100 Torr to one atmosphere. Methane and hydrogen gases with methane content of 10% to 100% are used for the CNT synthesis. At high growth temperatures (greater than or equal to 900 C), the rapid inter-diffusion of the transition metal iron on the graphite surface results in the rough fiber surface without any CNT grown on it. When the growth temperature is relative low (650-800 C), CNT with catalytic particles on the nanotube top ends are fabricated on the graphite surface. (Methane and hydrogen gases with methane content of 10% to 100% are used for the CNT synthesis.) (By measuring the samples) Using micro Raman spectroscopy in the breath mode region, single-walled or multi-walled CNT (MWCNT), depending on growth concentrations, are found. Morphology, length and diameter of these MWCNT are determined by scanning electron microscopy and Raman spectroscopy. The detailed results of syntheses and characterizations will be discussed in the presentation.

Zhu, Shen↗

NASA NTRS2002

Effect of Residual Accelerations on the Crystal Growth of II-VI Semiconductors in Low Earth Orbit

The paper compares and summarizes the effects of residual acceleration during crystal growth on the compositional variation of two II-VI solid solution binary alloys (Hg(0.8)Cd(0.2)Te and Hg(0.84)Zn(0.16)Te). The crystals were grown by directional solidification on the second United States Microgravity Payload (USMP-2) and the first United States Microgravity Laboratory (USML-1) missions, respectively. For both alloys, changes in the direction and magnitude of the quasisteady acceleration vector (approximately 0.4- 1 mu g) caused large changes in the radial compositional distribution that demonstrates the importance of residual accelerations, even in the submicrogravity range, for large density gradients in the melt and slow solidification rates. The observed compositional variations will be correlated to changes in the radial flow velocities ahead of the solidification interface.

Gillies, D. C.↗

NASA NTRS2002

Theory and Simulation of A Novel Viscosity Measurement Method for High Temperature Semiconductor

The properties of molten semiconductors are good indicators for material structure transformation and hysteresis under temperature variations. Viscosity, as one of the most important properties, is difficult to measure because of high temperature, high pressure, and vapor toxicity of melts. Recently, a novel method was developed by applying a rotating magnetic field to the melt sealed in a suspended quartz ampoule, and measuring the transient torque exerted by rotating melt flow on the ampoule wall. The method was designed to measure viscosity in short time period, which is essential for evaluating temperature hysteresis. This paper compares the theoretical prediction of melt flow and ampoule oscillation with the experimental data. A theoretical model was established and the coupled fluid flow and ampoule torsional vibration equations were solved numerically. The simulation results showed a good agreement with experimental data. The results also showed that both electrical conductivity and viscosity could be calculated by fitting the theoretical results to the experimental data. The transient velocity of the melt caused by the rotating magnetic field was found reach equilibrium in about half a minute, and the viscosity of melt could be calculated from the altitude of oscillation. This would allow the measurement of viscosity in a minute or so, in contrast to the existing oscillation cup method, which requires about an hour for one measurement.

Lin, Bochuan↗

NASA NTRS2002

Carbon Nanomaterials as Reinforcements for Composites

Carbon nanomaterials including fellerenes, nanotubes (CNT) and nanofibers have been proposed for many applications. One of applications is to use the carbon nanomaterials as reinforcements for composites, especially for polymer matrices. Carbon nanotubes is a good reinforcement for lightweight composite applications due to its low mass density and high Young's modulus. Two obscures need to overcome for carbon nanotubes as reinforcements in composites, which are large quantity production and functioning the nanotubes. This presentation will discuss the carbon nanotube growth by chemical vapor deposition. In order to reduce the cost of producing carbon nanotubes as well as preventing the sliding problems, carbon nanotubes were also synthesized on carbon fibers. The synthesis process and characterization results of nanotubes and nanotubes/fibers will be discussed in the presentation.

Zhu, Shen↗

NASA NTRS2002

Characterizing Thermal Properties of Melting Te Semiconductor: Thermal Diffusivity Measurements and Simulation

Tellurium is an element for many II-VI and I-III-VI(sub 2) compounds that are useful materials for fabricating many devises. In the melt growth techniques, the thermal properties of the molten phase are important parameter for controlling growth process to improve semiconducting crystal quality. In this study, thermal diffusivity of molten tellurium has been measured by a laser flash method in the temperature range from 500 C to 900 C. A pulsed laser with 1064 nm wavelength is focused on one side of the measured sample. The thermal diffusivity can be estimated from the temperature transient at the other side of the sample. A numerical simulation based on the thermal transport process has been also performed. By numerically fitting the experimental results, both the thermal conductivity and heat capacity can be derived. A relaxation phenomenon, which shows a slow drift of the measured thermal conductivity toward the equilibrium value after cooling of the sample, was observed for the first time. The error analysis and the comparison of the results to published data measured by other techniques will be discussed in the presentation.

Zhu, Shen↗

NASA NTRS2002

Crystal Growth of HgZnTe Alloy by Directional Solidification in Low Gravity Environment

An Hg(0.84)Zn(0.16)Te alloy crystal was back-melted and partially re-solidified during the first United States Microgravity Laboratory mission in the Marshall Space Flight Center's Crystal Growth Furnace. The experiment was inadvertently terminated at about 30% of planned completion. Nonetheless, it was successfully demonstrated that a HgZnTe alloy ingot partially grown and quenched on the ground can be back-melted and re-grown in space under nearly steady-state growth conditions. An identical "ground-truth" experiment was performed following the mission and a comparison between the properties of the crystals is described. The results indicate the importance of residual microgravity acceleration (less than or approx. equal to 0.4 micro-grams) even in the sub-microgravity range for the slow solidification velocities and large density gradients.

Su, Ching-Hua↗

NASA NTRS2001

Transport Phenomena of Off-Axis Sputtering Deposition

Various high quality epitaxial films, especially oxides, have been synthesized using off-axis sputtering deposition. In this presentation, we report the experiment results of ZnO films grown by the off-axis sputtering deposition. Films were synthesized in temperatures ranged from room temperature to 600 C, and pressures from 5 mTorr to 150 mTorr. Film growth rate was measured by surface profilometer, ellipsometer, and wavelength dispersive spectrometry. Due to the collisions between the sputtered species and the residue gases, the kinetic energy of species was reduced and the transport of depositing species changed from a ballistic movement for low pressure to a diffuse drift for high pressure in which the transport species were almost thermalized. The measurements show an increase of growth rates along the gravity vector when the Knodson (Knudsen??) number of transport species is less than 0.05, which suggests that gravity affected the transport characterization in off-axis sputtering deposition. Because the product of pressure (p) and travel distance (d) of sputtered species, p exceeds several mTorr-cm during film deposition, the classical simulations for sputtering process in high vacuum system may not be applied. Based on these experimental measurements, a transport process of the off-axis sputtering deposition is proposed. Several methods including the Monte Carlo method and gravity-driven flow dynamics simulation will be discussed.

Zhu, S.↗

NASA NTRS2001

Gravity Effects in Carbon Nanotube Growth by Thermal Chemical Vapor Deposition

Carbon nanotubes are synthesized using thermal chemical vapor deposition. The sizes of these carbon nanotubes (CNT) are quite uniform and the length of the tube is up to several tens of micrometers. With the substrate surface normal either along or against the gravity vector, different growth orientations of CNT are observed by scanning electron microscopy although the Raman spectra are similar for samples synthesized at different locations. These results suggest the gravitation effects in the growth of long and small diameter CNT.

Zhu, S.↗

NASA NTRS2001

Photoluminescence Studies of ZnSe Starting Materials and Vapor Grown Bulk Crystals

Low-temperature photoluminescence (PL) spectra were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during PVT process. The impurity levels in one set of starting material/grown crystal were also measured by glow discharge mass spectroscopy (GDMS). The purification effect of pre-growth heat treatments and the PVT process is evidenced from the GDMS results which showed orders of magnitude reduction in the Li and Na concentration and a factor of 3 reduction in the O content after growth. The PL spectra showed that the strong emissions associated with Li (or Na) in one of the starting materials disappeared after growth. The GDMS results also showed increases in the At and Si contents by orders of magnitude after growth. To evaluate the contamination of the crystal during the high temperature growth process, three growth runs were processed using similar growth parameters but different furnace environments. The PL spectra suggest that the At contamination originated from the fused silica ampoule and that the Inconel cartridge might have been the cause of the broad Cu green and Cu red bands observed in one of the grown crystals.

Su, Ching-Hua↗

NASA NTRS2001

Synthesis of Carbon Nanotubes Array by CVD

Since the properties of multi-wall carbon nanotubes (MWCNT) are superior in many devices such as electronics and sensors, many efforts have been involved in synthesizing particular structural or dimensional MWCNT. Uniform aligned MWCNT array is one of the prototype structures for devices such as filed emission device and microelectromechanical systems in which a large length to diameter ratio may also be required. Most aligned MWCNT recently synthesized by plasma enhanced chemical vapor deposition (CVD) have cone shaped structures. This presentation will illustrate aligned MWCNT array synthesized on silicon substrates using thermal CVD that could produce MWCNT with uniform diameter. An array of nickel particles was used as catalyst for MWCNT growth. A thin Ti or Au buffer layer was coated on the substrate prior to depositing nickel particles. Because the MWCNT size depends on the catalyst particle size, the nickel particle size annealed at various temperatures was investigated. MWCNT were grown on the substrate in the temperature range of 700 C - 1000 C and the pressure range of 1 to 300 torr. Methane and hydrogen gases with methane content of 1 - 10 % were used for the MWCNT synthesis. Morphology, length and diameter of MWCNT were determined by scanning electron microscopy and Raman spectroscopy. The detailed results of synthesis and characterizations will be discussed in the presentation.

Zhu, S.↗

NASA NTRS2001

Synthesis of ZnO:As Films Using Off-Axis Sputtering Deposition

As a novel oxide semiconductor material, ZnO is interesting for use in many applications. For fabricating electronic devices, it is important to have n- and p- type ZnO materials. Arsenic has been proven to be one of the p-type dopants for ZnO materials. However, information in studying the ZnAsO ternary compound films has been scarce. In order to investigate the morphology, structure and electrical properties of ZnAsO ternary compounds, ZnO:As films have been synthesized using off-axis sputtering deposition on various substrates including (100) Si and (0001) sapphire crystals. Films are grown under various growth conditions. ZnO:As targets with the atomic weight ratios of arsenic to zinc from 0.01 to 0.10 are used for film synthesis. The growth temperatures and pressures range from 350 to 550C and 5 to 150 mTorr, respectively. Argon to oxygen gas ratio for film growth is varied to examine the film quality as well. Film surface morphology, crystal structure, and compositions, are characterized using atomic force microscopy, x-ray diffraction, and energy dispersive spectroscopy, respectively. The compositions of target material and ZnO:As films grown under various conditions are then assessed. The electrical properties were also measured. The detail of these measurements will be discussed in the presentation.

Zhu, Shen↗

NASA NTRS2001

Transport Phenomena of Off-Axis Sputtering Deposition

Various high quality epitaxial films, especially oxides, have been synthesized using off-axis sputtering deposition. In this presentation, we report the experiment results of ZnO films grown by the off-axis sputtering deposition. Films were synthesized in temperatures ranged from room temperature to 600 C, and pressures from 5 mTorr to 150 mTorr. Film growth rate was measured by surface profilometer, ellipsometer, and wavelength dispersive spectrometry. Due to the collisions between the sputtered species and the residue gases, the kinetic energy of species was reduced and the transport of depositing species changed from a ballistic movement for low pressure to a diffusive drift for high pressure in which the transport species were almost thermalized. The measurements show an increase of growth rates along the gravity vector when the Knudsen number of transport species is less than 0.05, which suggests that gravity affected the transport characterization in off-axis sputtering deposition. Because the product of pressure (p) and travel distance (d) of sputtered species, pd, exceeds several mTorr-cm during film deposition, the classical simulations for sputtering process in high vacuum system may not be applied. Based on these experimental measurements, a transport process of the off-axis sputtering deposition is proposed. Several models including the Monte Carlo method and gravity-driven flow dynamics simulation will be discussed.

Zhu, S.↗

NASA NTRS2001

Characterization of Carbon Nanotubes Grown by Chemical Vapor Deposition

Since the superior properties of multi-wall carbon nanotubes (MWCNT) could improve numerous devices such as electronics and sensors, many efforts have been made in investigating the growth mechanism of MWCNT to synthesize high quality MWCNT. Chemical vapor deposition (CVD) is widely used for MWCNT synthesis, and scanning electron microscopy (SEM) and energy dispersive x-ray spectroscopy (EDS) are useful methods for analyzing the structure, morphology and composition of MWCNT. Temperature and pressure are two important growth parameters for fabricating carbon nanotubes. In MWCNT growth by CVD, the plasma assisted method is normally used for low temperature growth. However a high temperature environment is required for thermal CVD. A systematic study of temperature and pressure-dependence is very helpful to understanding MWCNT growth. Transition metal particles are commonly used as catalysis in carbon nanotube growth. It is also interesting to know how temperature and pressure affect the interface of carbon species and catalyst particles

Cochrane, J. C.↗

NASA NTRS2001

Growth Orientation of Carbon Nanotubes by Thermal CVD

Carbon nanotubes with a few shells are synthesized using thermal chemical vapor depositions. The sizes of these carbon nanotubes (CNT) are quite uniform and the length is up to several tens of micrometers. With the particular substrate location for which the substrate surface is normal along or against the gravity vector, different growth orientations of CNT are observed by scanning electron microscopy, though the Raman spectra for samples at different locations are similar to each other. The results suggest the gravitation effects in growth of the long and small diameter CNT.

Zhu, S.↗

NASA NTRS2001

Carbon Nanotubes Growth by CVD in Various Conditions

Since the superior properties of multi-wall carbon nanotubes (MWCNT could be used in numerous devices such as electronics and sensors, many efforts have been engaged in synthesizing particular structural or dimensional MWCNT. This presentation will illustrate MWCNT synthesized on silicon substrates by thermal CVD. On the substrate, an array of catalysts is coated using sputtering deposition. A thin Ti buffer layer is also coated on some Si substrates prior to depositing catalyst particles. Nickel, cobalt or iron transition metals are used as catalysts for the MWCNT growth. Since the diameter of MWCNT depends on the size of catalyst particles, the catalyst particle size is investigated after annealed at various temperatures. MWCNT are grown on the substrate in the temperature range of 700 to 1000 C and the pressure range of 100 torr to one atmosphere. Methane and hydrogen gases with methane content of 10% to 100% are used for the MWCNT synthesis. Morphology, length and diameter of these MWCNT are determined by scanning electron microscopy and Raman spectroscopy. The detailed results of syntheses and characterizations will be discussed in the presentation.

Zhu, S.↗

NASA NTRS2001

Characterization of a Structural Transformation of Carbon Nanotube Materials by Raman Spectroscopy

Raman spectra of carbon nanotubes and carbon microstructure materials synthesized on Si substrates by pulsed laser vaporization have been measured in the range of 50/cm to 4500/cm with the excitation of He-Ne laser. It is found that the formation of nanotubes depends strongly on the growth temperatures and high quality multi-wall and single-wall nanotubes were produced at 700 and 990 C, respectively. The Raman spectra of one sample grown at 700 C were found to be dependent on the excitation intensity. The spectra of the sample suggest that the structure is similar to that of multi-wall nanotubes at low excitation intensity (2.5 kW/sq cm) and it converts to the structure of single-wall nanotubes at higher intensity (25 kW/sq cm). Measurements taken while cycling the light intensity indicate a reversible structural transition.

Cui, Y.↗

NASA NTRS2001

Viscosity Relaxation in Molten HgZnTe

Rotating cup measurements of the viscosity of the pseudo-binary melt, HgZnTe have shown that the isothermal liquid with zinc mole fraction 0.16 requires tens of hours of equilibration time before a steady viscous state can be achieved. Over this relaxation period, the viscosity at 790 C increases by a factor of two, while the viscosity at 810 C increases by 40%. Noting that the Group VI elements tend to polymerize when molten, we suggest that the viscosity of the melt is enhanced by the slow formation of Te atom chains. To explain the build-up of linear Te n-mers, we propose a scheme, which contains formation reactions with second order kinetics that increase the molecular weight, and decomposition reactions with first order kinetics that inactivate the chains. The resulting rate equations can be solved for the time dependence of each molecular weight fraction. Using these molecular weight fractions, we calculate the time dependence of the average molecular weight. Using the standard semi-empirical relation between polymer average molecular weight and viscosity, we then calculate the viscosity relaxation curve. By curve fitting, we find that the data imply that the rate constant for n-mer formation is much smaller than the rate constant for n-mer deactivation, suggesting that Te atoms only weakly polymerize in molten HgZnTe. The steady state toward which the melt relaxes occurs as the rate of formation of an n-mer becomes exactly balanced by the sum of the rate for its deactivation and the rate for its polymerization to form an (n+1)-mer.

Su, Ching-Hua↗