Search NASA⌕ Search

Engineering topics

Lemaitre, A

Publications and source records attributed to Lemaitre, A.

High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities

Structural and optical properties of InAlAs/GaAlAs quantum dots grown by molecular beam epitaxy are studied using transmission electron microscopy and temperature- and time-resolved photoluminescence. The control of the recombination lifetime (50 ps-1.25 ns) and of the dot density (5.10{sup -8}-2.10{sup 11} cm{sup -3}) strongly suggest that these material systems can find wide applications in opto-electronic devices as focusing non-linear dispersive materials as well as fast saturable absorbers.

36 MATERIALS SCIENCE↗

Electron Spin Dynamics in Semiconductor Quantum Dots

An electron spin confined to a semiconductor quantum dot is not subject to the classical spin relaxation mechanisms known for free carriers but it strongly interacts with the nuclear spin system via the hyperfine interaction. We show in time resolved photoluminescence spectroscopy experiments on ensembles of self assembled InAs quantum dots in GaAs that this interaction leads to strong electron spin dephasing.

36 MATERIALS SCIENCE↗