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Lentine, Anthony L.

Publications and source records attributed to Lentine, Anthony L..

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Electrically interfaced Brillouin-active waveguide for microwave photonic measurements

New strategies for converting signals between optical and microwave domains could play a pivotal role in advancing both classical and quantum technologies. Traditional approaches to optical-to-microwave transduction typically perturb or destroy the information encoded on intensity of the light field, eliminating the possibility for further processing or distribution of these signals. In this paper, we introduce an optical-to-microwave conversion method that allows for both detection and spectral analysis of microwave photonic signals without degradation of their information content. This functionality is demonstrated using an optomechanical waveguide integrated with a piezoelectric transducer. Efficient electromechanical and optomechanical coupling within this system permits bidirectional optical-to-microwave conversion with a quantum efficiency of up to -54.16 dB. Leveraging the preservation of the optical field envelope in intramodal Brillouin scattering, we demonstrate a multi-channel microwave photonic filter by transmitting an optical signal through a series of electro-optomechanical waveguide segments, each with distinct resonance frequencies. Such electro-optomechanical systems could offer flexible strategies for remote sensing, channelization, and spectrum analysis in microwave photonics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

High-performance silicon photonic single-sideband modulators for cold-atom interferometry

The laser system is the most complex component of a light-pulse atom interferometer (LPAI), controlling frequencies and intensities of multiple laser beams to configure quantum gravity and inertial sensors. Its main functions include cold-atom generation, state preparation, state-selective detection, and generating a coherent two-photon process for the light-pulse sequence. To achieve substantial miniaturization and ruggedization, we integrate key laser system functions onto a photonic integrated circuit. Our study focuses on a high-performance silicon photonic suppressed-carrier single-sideband (SC-SSB) modulator at 1560 nanometers, capable of dynamic frequency shifting within the LPAI. By independently controlling radio frequency (RF) channels, we achieve 30-decibel carrier suppression and unprecedented 47.8-decibel sideband suppression at peak conversion efficiency of –6.846 decibels (20.7%). We investigate imbalances in both amplitudes and phases between the RF signals. Using this modulator, we demonstrate cold-atom generation, state-selective detection, and atom interferometer fringes to estimate gravitational acceleration, g ≈ 9.77 ± 0.01 meters per second squared, in a rubidium ( 87 Rb) atom system.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Solid-state information pattern discriminating switch

A maze-based switch generally having three functional blocks is disclosed. The first functional block handles communications by accepting an entered maze pattern from an external system controller and outputting the entered maze pattern (and optionally its directional complement) to the second functional block. The second functional block stores the maze pattern (and optionally its directional complement) to a permanent storage element and outputs the stored, entered maze pattern and its directional complement to a series of transistors in the third functional block. The third functional block is an electronic maze in which a correct maze pattern and its directional complement must be received by the transistors for the transistors to pass electrical power through the electronic maze to a connected element. The third functional block may alternatively be implemented with optical elements, optoelectronic elements, microelectromechanical elements, or elements formed by other microsystem technologies.

Galambos, Paul C.↗
DOE OSTI2024

Nonreciprocal Dissipation Engineering via Strong Coupling with a Continuum of Modes

Optical nonreciprocity plays a key role in almost every optical system, directing light flow and protecting optical components from backscattered light. Controllable forms of on-chip nonreciprocity are needed for the robust operation of increasingly sophisticated photonic integrated circuits (PICs) in the context of classical and quantum computation, networking, communications, and sensing. However, it has been challenging to achieve wideband, low-loss optical nonreciprocity on-chip. In this paper, we demonstrate strong coupling and Rabi-like energy exchange between photonic bands, possessing a continuum of modes, to unlock nonreciprocity and frequency translation over wide optical bandwidths in silicon. Using a traveling-wave phonon field to drive indirect interband photonic transitions, we demonstrate band hybridization that enables an intriguing form of nonreciprocal dissipation engineering. Using the converted mode to create a nonreciprocal dissipation channel, we demonstrate a frequency-neutral, low-loss (less than 1 dB) isolator with high nonreciprocal contrast (more than 14 dB) and broad operating bandwidth (more than 59 GHz). Additionally, through the implementation of complete interband conversion, we demonstrate a high extinction (more than 55 dB) optical frequency translation operation with near-unity efficiency.

Zhou, Yishu↗
DOE OSTI2023

Concentrated thermal tuner for optical microdisk devices

A thermally tunable microresonator device with enhanced thermal confinement for greater efficiency is provided. A thermal confinement structure is electrically connected in series with the heater element used for tuning the microresonator. The heater element is conformed in a circular arc concentric with the microresonator, the thermal confinement structure comprises two or more tiers, and each tier comprises at least one metal trace conformed in a circular arc concentric with the microresonator.

Martinez, Nicholas Jacob↗
DOE OSTI2023

Heterogeneous integration of an electro-optical platform

A hybrid photonic integrated circuit and a method of its manufacture are provided. A SiP functional layer is fabricated on an SOI wafer. A lithium niobate thin film is bonded to the SiP functional layer. The silicon handle layer is removed from the SOI wafer to expose buried oxide, and at least one III-V die is bonded to the exposed buried oxide. In embodiments, at least one waveguiding component is fabricated in the SiP functional layer. In embodiments, the SiP functional layer comprises a top waveguiding layer.

Kodigala, Ashok↗
DOE OSTI2023

Integrated silicon optical amplifier with reduced residual pump

An optical amplifier device employing a Mach-Zehnder Interferometer (MZI) that reduces the amount of residual pump power in the optical output of the amplifier is disclosed. The MZI amplifier employs two geometrically linear optical amplifier arms or two multi-spatial-mode racetrack optical amplifiers to amplify a signal with a pumping beam, with the signal output port having extremely low levels of residual pump power. The MZI optical amplifier is a silicon photonic integrated circuit, with all optical amplifiers, couplers, phase shifters, and optical attenuators formed of silicon photonic integrated circuit elements. The MZI optical amplifier may include one, two, or three MZI stages, and multiple MZI optical amplifiers may be used in parallel or sequentially to achieve higher overall signal gain or power. The MZI optical amplifier may employ Brillouin-scattering-based amplifiers, Raman-based integrated waveguide optical amplifiers, or Erbium-doped integrated waveguide optical amplifiers.

Lentine, Anthony L.↗
DOE OSTI2023

Buried-Electrode Hybrid Bonded Thin-Film Lithium Niobate Electro-Optic Mach-Zehnder Modulators

Hybrid bonded silicon nitride thin-film lithium niobate (TFLN) Mach-Zehnder modulators (MZMs) at 1310 nm were designed with metal coplanar waveguide electrodes buried in the silicon-on-insulator (SOI) chip. Here, the MZM devices showed greatly improved performance compared to earlier devices of a similar design, and similar performance to comparable MZM devices with gold electrodes made on top of the TFLN layer. Both devices achieve a 3-dB electro-optic bandwidth greater than 110 GHz and voltage-driven optical extinction ratios greater than 28 dB. Half-wave voltage-length products (VπL) of 2.8 and 2.5 V∙ cm were measured for the 0.5 and 0.4 cm long buried metal and top gold electrode MZMs, respectively.

42 ENGINEERING↗
DOE OSTI2023

Compact laser source with frequency modulators generating multiple lines

A compact laser source and a single sideband modulator used therein is disclosed. The compact laser source includes a seed laser and one or more channels, with each channel generating one or more output laser beams having corresponding different wavelengths. The compact laser source can be formed in whole or in part on a single optical motherboard to thereby minimize space and power requirements. By employing the disclosed single sideband modulator, harmonics in the generated output laser beams can be minimized. The compact laser source finds application in an atom interferometer (AI) system, which may be used to measure gravity, acceleration, or rotation of the AI system.

Lentine, Anthony L.↗
DOE OSTI2022

110 GHz, 110 mW hybrid silicon-lithium niobate Mach-Zehnder modulator

High bandwidth, low voltage electro-optic modulators with high optical power handling capability are important for improving the performance of analog optical communications and RF photonic links. Here we designed and fabricated a thin-film lithium niobate (LN) Mach-Zehnder modulator (MZM) which can handle high optical power of 110 mW, while having 3-dB bandwidth greater than 110 GHz at 1550 nm. The design does not require etching of thin-film LN, and uses hybrid optical modes formed by bonding LN to planarized silicon photonic waveguide circuits. A high optical power handling capability in the MZM was achieved by carefully tapering the underlying Si waveguide to reduce the impact of optically-generated carriers, while retaining a high modulation efficiency. The MZM has a $V_πL$ product of 3.1 V.cm and an on-chip optical insertion loss of 1.8 dB.

42 ENGINEERING↗
DOE OSTI2022

Narrowband microwave-photonic notch filters using Brillouin-based signal transduction in silicon

Abstract The growing demand for bandwidth makes photonic systems a leading candidate for future telecommunication and radar technologies. Integrated photonic systems offer ultra-wideband performance within a small footprint, which can naturally interface with fiber-optic networks for signal transmission. However, it remains challenging to realize narrowband (∼MHz) filters needed for high-performance communications systems using integrated photonics. In this paper, we demonstrate all-silicon microwave-photonic notch filters with 50× higher spectral resolution than previously realized in silicon photonics. This enhanced performance is achieved by utilizing optomechanical interactions to access long-lived phonons, greatly extending available coherence times in silicon. We use a multi-port Brillouin-based optomechanical system to demonstrate ultra-narrowband (2.7 MHz) notch filters with high rejection (57 dB) and frequency tunability over a wide spectral band (6 GHz) within a microwave-photonic link. We accomplish this with an all-silicon waveguide system, using CMOS-compatible fabrication techniques.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Nonreciprocal Frequency Domain Beam Splitter

The canonical beam splitter—a fundamental building block of quantum optical systems—is a reciprocal element. It operates on forward- and backward-propagating modes in the same way, regardless of direction. The concept of nonreciprocal quantum photonic operations, by contrast, could be used to transform quantum states in a momentum- and direction-selective fashion. In this study, we demonstrate the basis for such a nonreciprocal transformation in the frequency domain through intermodal Bragg scattering four-wave mixing (BSFWM). Since the total number of idler and signal photons is conserved, the process can preserve coherence of quantum optical states, functioning as a nonreciprocal frequency beam splitter. We explore the origin of this nonreciprocity and find that the phase-matching requirements of intermodal BSFWM produce an enormous asymmetry ( 76 × ) in the conversion bandwidths for forward and backward configurations, yielding ~ 25 dB of nonreciprocal contrast over several hundred GHz. We also outline how the demonstrated efficiencies ( ~ 10 – 4 ) may be scaled to near-unity values with readily accessible powers and pumping configurations for applications in integrated quantum photonics.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Cryogenic C-band wavelength division multiplexing system using an AIM Photonics Foundry process design kit

Cryogenic environments make superconducting computing possible by reducing thermal noise, electrical resistance and heat dissipation. Heat generated by the electronics and thermal conductivity of electrical transmission lines to the outside world constitute two main sources of thermal load in such systems. As a result, higher data rates require additional transmission lines which come at an increasingly higher cooling power cost. Hybrid or monolithic integration of silicon photonics with the electronics can be the key to higher data rates and lower power costs in these systems. We present a 4-channel wavelength division multiplexing photonic integrated circuit (PIC) built from modulators in the AIM Photonics process development kit (PDK) that operate at 25 Gbps at room temperature and 10 Gbps at 40 K. We further demonstrate 2-channel operation for 20 Gbps aggregate data rate at 40 K using two different modulators/wavelengths, with the potential for higher aggregate bit rates by utilizing additional channels.

42 ENGINEERING↗
DOE OSTI2020

Backscatter-Immune Injection-Locked Brillouin Laser in Silicon

As self-sustained oscillators, lasers possess the unusual ability to spontaneously synchronize. These nonlinear dynamics are the basis for a simple yet powerful stabilization technique known as injection locking, in which a laser’s frequency and phase can be controlled by an injected signal. Because of its inherent simplicity and favorable noise characteristics, injection locking has become a workhorse for coherent amplification and high-fidelity signal synthesis in applications ranging from precision atomic spectroscopy to distributed sensing. Within integrated photonics, however, these injection-locking dynamics remain relatively untapped—despite significant potential for technological and scientific impact. In this work, we demonstrate injection locking in a silicon photonic Brillouin laser. Injection locking of this monolithic device is remarkably robust, allowing us to tune the laser emission by a significant fraction of the Brillouin gain bandwidth. Harnessing these dynamics, we demonstrate amplification of small signals by more than 23 dB. Moreover, we demonstrate that the injection-locking dynamics of this system are inherently nonreciprocal, yielding unidirectional control and backscatter immunity in an all-silicon system. This device physics opens the door to strategies for phase-noise reduction, low-noise amplification, and backscatter immunity in silicon photonics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗