Engineering topics
Publications and source records attributed to Lewis, E. T..
Analog computer application for determination of charge centers in multilayer gate structure of variable threshold FET, deriving equations yielding position of internally stored charge
A fully integrated, electrically alterable, nonvolatile, nondestructive readout control memory was developed, using as storage elements metal-nitride-silicon variable threshold transistors. An optimum approach to such a memory was developed in which a three dimensional selection technique was used, both for read and write operations. Electrical isolation of writing and memory circuits was obtained by means of separate memory and write circuit chips. This method provided protection from voltage breakdowns, increased circuit flexibility, and greater ease of testing of interim and final circuit elements.
FET memory element charge storage two layer model for thin film dielectrics noting charge/discharge times
Charge storage behavior of multiple layer etched silicon semiconductor device