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Li, C. J.

Publications and source records attributed to Li, C. J..

Crystal growth of GaAs in space

It is shown that stoichiometry variations in the GaAs melt during growth constitute the most critical parameter regarding defect formations and their interactions; this defect structure determines all relevant characteristics of GaAs. Convection in the melt leads to stoichiometric variations. Growth in axial magnetic fields reduces convection and permits the study of defect structure. In order to control stoichiometry in space and to accommodate expansion during solidification, a partially confined configuration was developed. A triangular prism is employed to contain the growth melt. This configuration permits the presence of the desired vapor phase in contact with the melt for controlling the melt stoichiometry.

Gatos, H. C.↗

Classification of journal surfaces using surface topography parameters and software methods to compensate for stylus geometry

Measurements made with a stylus surface tracer which provides a digitized representation of a surface profile are discussed. Parameters are defined to characterize the height (e.g., RMS roughness, skewness, and kurtosis) and length (e.g., autocorrelation) of the surface topography. These are applied to the characterization of crank shaft journals which were manufactured by different grinding and lopping procedures known to give significant differences in crank shaft bearing life. It was found that three parameters (RMS roughness, skewness, and kurtosis) are necessary to adequately distinguish the character of these surfaces. Every surface specimen has a set of values for these three parameters. They can be regarded as a set coordinate in a space constituted by three characteristics axes. The various journal surfaces can be classified along with the determination of a proper wavelength cutoff (0.25 mm) by using a method of separated subspace. The finite radius of the stylus used for profile tracing gives an inherent measurement error as it passes over the fine structure of the surface. A mathematical model is derived to compensate for this error.

Li, C. J.↗