A Replacement Reaction Enabled Interdigitated Metal/Solid Electrolyte Architecture for Battery Cycling at 20 mA cm-2 and 20 mAh cm-2
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Engineering topics
Publications and source records attributed to Li, G..
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The nEXO neutrinoless double beta (0νββ) decay experiment is designed to use a time projection chamber and 5000 kg of isotopically enriched liquid xenon to search for the decay in 136 Xe. Progress in the detector design, paired with higher fidelity in its simulation and an advanced data analysis, based on the one used for the final results of EXO-200, produce a sensitivity prediction that exceeds the half-life of 10 28 years. Specifically, improvements have been made in the understanding of production of scintillation photons and charge as well as of their transport and reconstruction in the detector. The more detailed knowledge of the detector construction has been paired with more assays for trace radioactivity in different materials. In particular, the use of custom electroformed copper is now incorporated in the design, leading to a substantial reduction in backgrounds from the intrinsic radioactivity of detector materials. Furthermore, a number of assumptions from previous sensitivity projections have gained further support from interim work validating the nEXO experiment concept. Together these improvements and updates suggest that the nEXO experiment will reach a half-life sensitivity of 1.35 × 10 28 yr at 90% confidence level in 10 years of data taking, covering the parameter space associated with the inverted neutrino mass ordering, along with a significant portion of the parameter space for the normal ordering scenario, for almost all nuclear matrix elements. Furthermore, the effects of backgrounds deviating from the nominal values used for the projections are also illustrated, concluding that the nEXO design is robust against a number of imperfections of the model.
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Silicon photomultipliers are regarded as a very promising technology for next-generation, cutting-edge detectors for low-background experiments in particle physics. This work presents systematic reflectivity studies of Silicon Photomultipliers (SiPM) and other samples in liquid xenon at vacuum ultraviolet (VUV) wavelengths. A dedicated setup at the University of Münster has been used that allows to acquire angle-resolved reflection measurements of various samples immersed in liquid xenon with 0.45° angular resolution. Four samples are investigated in this work: one Hamamatsu VUV4 SiPM, one FBK VUV-HD SiPM, one FBK wafer sample and one Large-Area Avalanche Photodiode (LA-APD) from EXO-200. Here, the reflectivity is determined to be 25–36 % at an angle of incidence of 20° for the four samples and increases to up to 65 % at 70° for the LA-APD and the FBK samples. The Hamamatsu VUV4 SiPM shows a decline with increasing angle of incidence. The reflectivity results will be incorporated in upcoming light response simulations of the nEXO detector.
nEXO is a proposed tonne-scale neutrinoless double beta decay (0νββ) experiment using liquid 136 Xe (LXe) in a Time Projection Chamber (TPC) to read out ionization and scintillation signals. Between the field cage and the LXe vessel, a layer of LXe (“skin” LXe) is present, where no ionization signal is collected. Only scintillation photons are detected, owing to the lack of optical barrier around the field cage. Here, in this work, we show that the light originating in the skin LXe region can be used to improve background discrimination by 5% over previous published estimates. This improvement comes from two elements. First, a fraction of the γ-ray background is removed by identifying light from interactions with an energy deposition in the skin LXe. Then, background from 222 Rn dissolved in the skin LXe can be efficiently rejected by tagging the α decay in the 214 Bi- 214 Po chain in the skin LXe.
Characterization of the vacuum ultraviolet (VUV) reflectance of silicon photomultipliers (SiPMs) is important for large-scale SiPM-based photodetector systems. In this work, we report the angular dependence of the specular reflectance in vacuum of SiPMs manufactured by Fondazionc Bruno Kessler (FBK) and Hamamatsu Photonics K.K. (HPK) over wavelengths ranging from 120 to 280 nm. Refractive index and extinction coefficient of the thin silicon-dioxide film deposited on the surface of the FBK SiPMs are derived from reflectance data of an FBK silicon wafer with the same deposited oxide film as SiPMs. The diffuse reflectance of SiPMs is also measured at 193 nm. We use the VUV spectral dependence of the optical constants to predict the reflectance of the FBK silicon wafer and FBK SiPMs in liquid xenon.
Femtosecond laser excitations of FeRh/Pt bilayers launch an ultrafast pulse of electric photocurrents in the Pt-layer and subsequently result in the emission of electromagnetic radiation in the THz spectral range. Analysis of the THz emission as a function of the polarization of the femtosecond laser pulse, external magnetic field, sample temperature, and sample orientation shows that the photocurrent can emerge due to vertical spin pumping and photo-induced inverse spin–orbit torque at the FeRh/Pt interface. Additionally, the vertical spin pumping from FeRh into Pt does not depend on the polarization of light and originates from ultrafast laser-induced demagnetization of the ferromagnetic phase of FeRh. The photo-induced inverse spin–orbit torque at the FeRh/Pt interface can be described in terms of a helicity-dependent effect of circularly polarized light on the magnetization of the ferromagnetic FeRh and the subsequent generation of a photocurrent.
Measurements of electron drift properties in liquid and gaseous xenon are reported. The electrons are generated by the photoelectric effect in a semitransparent gold photocathode driven in transmission mode with a pulsed ultraviolet laser. The charges drift and diffuse in a small chamber at various electric fields and a fixed drift distance of 2.0 cm. At an electric field of 0.5 kV/cm, the measured drift velocities and corresponding temperature coefficients respectively are 1.97 ± 0.04 mm/µs and (-0.69 ± 0.05)%/K for liquid xenon, and 1.42 ± 0.03 mm/µs and (+0.11 ± 0.01)%/K for gaseous xenon at 1.5 bar. In addition, we measure longitudinal diffusion coefficients of 25.7±4.6 cm2/s and 149±23 cm2/s, for liquid and gas, respectively. The quantum efficiency of the gold photocathode is studied at the photon energy of 4.73 eV in liquid and gaseous xenon, and vacuum. These charge transport properties and the behavior of photocathodes in a xenon environment are important in designing and calibrating future large scale noble liquid detectors.
Considering reflective properties of materials and photodetection efficiency (PDE) of photodetectors is important for optimizing energy resolution and sensitivity of the next generation neutrinoless double beta decay, direct detection dark matter, and neutrino oscillation experiments that will use noble liquid gases, such as nEXO, DARWIN, DarkSide-20k, and DUNE . Little information is currently available about reflectivity and PDE in liquid noble gases, because such measurements are difficult to conduct in a cryogenic environment and at short enough wavelengths. Here we report a measurement of specular reflectivity and relative PDE of Hamamatsu VUV4 silicon photomultipliers (SiPMs) with 50 μ m micro-cells conducted with xenon scintillation light ( ~ 175 nm) in liquid xenon. The specular reflectivity at 15 o incidence of three samples of VUV4 SiPMs is found to be 30.4 ± 1.4%, 28.6 ± 1.3%, and 28.0 ± 1.3%, respectively. The PDE at normal incidence differs by ± 8% (standard deviation) among the three devices. The angular dependence of the reflectivity and PDE was further measured for one of the SiPMs. Both the reflectivity and PDE decrease as the angle of incidence increases. This is the first measurement of an angular dependence of PDE and reflectivity of a SiPM in liquid xenon.
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In this paper we report on the characterization of the Hamamatsu VUV4 (S/N: S13370-6152) Vacuum Ultra-Violet (VUV) sensitive Silicon Photo-Multipliers (SiPMs) as part of the development of a solution for the detection of liquid xenon scintillation light for the nEXO experiment. Various SiPM features, such as: dark noise, gain, correlated avalanches, direct crosstalk and Photon Detection Efficiency (PDE) were measured in a dedicated setup at TRIUMF. SiPMs were characterized in the range 163 K = T = 233 K. At an over voltage of 3.1 ± 0.2 V and at T = 163 K we report a number of Correlated Avalanches (CAs) per pulse in the 1µs interval following the trigger pulse of 0.161±0.005. At the same settings the Dark-Noise (DN) rate is 0.137 ± 0.002 Hz/mm2. Both the number of CAs and the DN rate are within nEXO specifications. The PDE of the Hamamatsu VUV4 was measured for two different devices at T = 233 K for a mean wavelength of 189 ± 7 nm. At 3.6 ± 0.2 V and 3.5 ± 0.2 V of over voltage we report a PDE of 13.4 ± 2.6 % and 11 ± 2%, corresponding to a saturation PDE of 14.8 ± 2.8 % and 12.2±2.3%, respectively. Both values are well below the 24 % saturation PDE advertised by Hamamatsu. More generally, the second device tested at 3.5 ± 0.2 V of over voltage is below the nEXO PDE requirement. The first one instead yields a PDE that is marginally close to meeting the nEXO specifications. This suggests that with modest improvements the Hamamatsu VUV4 MPPCs could be considered as an alternative to the FBKLF SiPMs for the final design of the nEXO detector.
nEXO is a proposed experiment to search for the neutrino-less double beta decay (0νββ) of 136 Xe in a tonne-scale liquid xenon time projection chamber (TPC). The nEXO TPC will be equipped with charge collection tiles to form the anode. In this work, the charge reconstruction performance of this anode design is studied with a dedicated simulation package. A multi-variate method and a deep neural network are developed to distinguish simulated 0νββ signals from backgrounds arising from trace levels of natural radioactivity in the detector materials. These simulations indicate that the nEXO TPC with charge-collection tiles shows promising capability to discriminate the 0νββ signal from backgrounds. Furthermore, the estimated half-life sensitivity for 0νββ decay is improved by 20 32)% with the multi-variate (deep neural network) methods considered here, e sensitivity estimated in the nEXO pre-conceptual design report.
Weyl semimetals are crystalline solids that host emergent relativistic Weyl fermions and have characteristic surface Fermi-arcs in their electronic structure. Weyl semimetals with broken time reversal symmetry are difficult to identify unambiguously. In this work, using angle-resolved photoemission spectroscopy, we visualized the electronic structure of the ferromagnetic crystal Co 3 Sn 2 S 2 and discovered its characteristic surface Fermi-arcs and linear bulk band dispersions across the Weyl points. Here, these results establish Co 3 Sn 2 S 2 as a magnetic Weyl semimetal that may serve as a platform for realizing phenomena such as chiral magnetic effects, unusually large anomalous Hall effect and quantum anomalous Hall effect.
Ultrafast demagnetization of Co/Pt heterostructures induced by a femtosecond 800-nm laser pulse launches a spin current from Co to Pt and subsequent conversion of the spin current to a charge current in the Pt layer due to the inverse spin-Hall effect. At the same time, due to the spin-dependent photogalvanic effect, a circularly polarized femtosecond laser pulse also generates a photocurrent at the Co/Pt interface. Both ultrashort photocurrent pulses are effectively detected in a contactless way by measuring the THz radiation they emit. Here we aim to understand how the properties of the Co/Pt interface affect the photocurrents in the bilayers. By varying the interfacial roughness, crystal structure, and interfacial intermixing, as well as having an explicit focus on the cases when THz emissions from these two photocurrents reveal opposite trends, we identify which interface properties play a crucial role for the photocurrents. In particular, we show that by reducing the roughness, the THz emission due to the spin-dependent photogalvanic effect reduces to zero while the strength of the THz emission from the photocurrent associated with the inverse spin-Hall effect increases by a factor of 2. On the other hand, while intermixing strongly enhances the THz emission from the inverse spin-Hall effect by a factor of 4.2, THz emission related to the spin-dependent photogalvanic effect reveals the opposite trend. Furthermore, these findings indicate that microstructural properties of the Co-Pt interface play a decisive role in the generation of photocurrents.
CoCrFeNiMn high-entropy alloy (HEA) has gained increasing attention in recent years. In this work, CoCrFeNiMn HEA was prepared by arc melting and casting method; and high-pressure torsion (HPT) technology was used to refine the grains. A series of nanoindentation experiments was used to investigate the effect of different loading rates and deformations on the nanoindentation creep behavior of the CoCrFeNiMn HEA. The results show that the grain size of the CoCrFeNiMn HEA refines to the nanoscale after HPT. However, grain refinement is not obvious with further increasing HPT rotation. The loading rate and HPT rotations have an obvious effect on the nanoindentation creep behaviors of the CoCrFeNiMn HEA. The creep behaviors of the as-cast and HPT-treated CoCrFeNiMn HEA may be controlled by dislocations and the collective effect of GB sliding and dislocations, respectively.
Future ton-scale liquefied noble gas detectors depend on efficient light detection in the vacuum ultraviolet (VUV) range. In the past years, silicon photomultipliers (SiPMs) have emerged as a valid alternative to standard photomultiplier tubes or large-area avalanche photodiodes. The next-generation double-beta decay experiment, nEXO, with a 5-ton liquid xenon time projection chamber will use SiPMs for detecting the 175-nm xenon scintillation light, in order to achieve an energy resolution of σ/Q ββ =1 %. This paper presents recent measurements of the VUV-HD generation SiPMs from Fondazione Bruno Kessler, Trento, Italy, in two complementary setups. It includes measurements of the photon-detection efficiency (PDE) with gaseous xenon scintillation light in a vacuum setup and dark measurements in a dry nitrogen gas setup. Here, we report improved PDE at 175 nm compared to previous generation devices that would meet the criteria of nEXO. Furthermore, we present the projected nEXO detector light collection and energy resolution that could be achieved by using these SiPMs.
In this paper, we report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.