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Li, Jiun-Yun

Publications and source records attributed to Li, Jiun-Yun.

At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure

Realizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor–liquid–solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current–voltage ( I d – V g ) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Temperature Dependence of Charge Distributions and Carrier Mobility in an Undoped Si/SiGe Heterostructure

Capacitance–voltage (C–V ) characteristics and carrier transport properties of 2-D electron gases (2DEGs) in an undoped Si/SiGe heterostructure at T = 4 – 35 K are presented here. In this work, two capacitance plateaus due to density saturation of the 2DEG in the buried Si quantum well (QW) are observed and explained by a model of surface tunneling. The peak mobility at 4 K is 4.1 × 10 5 cm 2 /V·s and enhanced by a factor of 1.97 at an even lower carrier density compared to the saturated carrier density, which is attributed to the effect of remote carrier screening. At T = 35 K, the mobility enhancement with a factor of 1.35 is still observed, which suggests the surface tunneling is still dominant.

42 ENGINEERING↗
DOE OSTI2020

Thermoelectric transport of the half-filled lowest Landau level in a p -type Ge/SiGe heterostructure

In this work, we investigate the thermoelectric transport properties of the half-filled lowest Landau level v = 1 / 2 in a gated two-dimensional hole system in a strained Ge/SiGe heterostructure. The electron-diffusion dominated regime is achieved below 600 mK, where the diffusion thermopower S x x d at v = 1 / 2 shows a linear temperature dependence. In contrast, the diffusion-dominated Nernst signal S x y d of v = 1 / 2 is found to approach zero, which is independent of the measurement configuration (sweeping magnetic field at a fixed hole density or sweeping the density by a gate at a fixed magnetic field).

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Electron mobility enhancement in an undoped Si/SiGe heterostructure by remote carrier screening

Here, we investigate the effects of surface tunneling on electrostatics and transport properties of two-dimensional electron gases (2DEGs) in undoped Si/SiGe heterostructures with different 2DEG depths. By varying the gate voltage, four stages of density-mobility dependence are identified with two density saturation regimes observed, which confirms that the system transitions between equilibrium and nonequilibrium. Mobility is enhanced with an increasing density at low biases and, counterintuitively, with a decreasing density at high biases as well. The density saturation and mobility enhancement can be semiquantitatively explained by a surface tunneling model in combination with a bilayer screening theory

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Single and double hole quantum dots in strained Ge/SiGe quantum wells

Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platforms that may provide advantages, such as enhanced qubit control, longer coherence times, and improved extensibility. Recent advances in heterostructure material growth have opened new possibilities for employing hole spins in semiconductors for qubit applications. Undoped, strained Ge/SiGe quantum wells are promising candidate hosts for hole spin-based qubits due to their low disorder, large intrinsic spin–orbit coupling strength, and absence of valley states. We use a simple one-layer gated device structure to demonstrate both a single quantum dot as well as coupling between two adjacent quantum dots. The hole effective mass in these undoped structures, m* ~ 0.08 m 0 , is significantly lower than for electrons in Si/SiGe, pointing to the possibility of enhanced tunnel couplings in quantum dots and favorable qubit–qubit interactions in an industry-compatible semiconductor platform.

36 MATERIALS SCIENCE↗