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Li, Tingwei

Publications and source records attributed to Li, Tingwei.

Thermoelectric Figure of Merit of a Superatomic Crystal Re 6 Se 8 I 2 Monolayer

Superatomic materials are newly emerging candidates for high-performance thermoelectric (TE) devices due to their intrinsic ultralow thermal conductivities. However, the low TE power factor becomes a huge obstacle to reaching the required the dimensionless figure of merit (ZT) values for practical applications. Here, motivated by the recently synthesized superatomic Re 6 Se 8 I 2 monolayer [J. Am. Chem. Soc. 144, 74 (2022)], we study its superior thermoelectric properties by using density functional theory combined with phonon Boltzmann transport theory and deep potential molecular dynamics. We show that the large mass and anharmonic Re-I bonds introduce strong phonon scattering and result in low lattice thermal conductivity of 1.20 W m -1 K -1 at 300 K, while the strong and harmonic Re-Se network ensures the high TE power factor of 4344 μW m -1 K -2 in b direction for n-type doping. This is an order of magnitude higher than that of other cluster-based materials. Due to the low thermal conductivity and high TE power factor, Re 6 Se 8 I 2 exhibits high ZT values of 1.20 (500 K) and 1.43 (900 K) with n-type doping along the b direction among all the cluster-based thermoelectric materials reported so far.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A record high average ZT over a wide temperature range in a Single-layer Sb 2 Si 2 Te 6

Conversion of waste heat into usable energy requires development of thermoelectric materials with high efficiency in a wide temperature range. Here, using first principles theory and Boltzmann transport theory, we show that the thermoelectric performance of the p-type single-layer Sb 2 Si 2 Te 6 has a high figure of merit ZT of 2.62 at 900 K and a record high average ZT of ~1.93 (corresponding the conversion efficiency of ~23.2%) in the temperature range of 300-900 K. These values are significantly higher than the recently measured average ZT of ~0.57 in the temperature range of 310–823 K [Luo et al., Joule 4, 159–175 (2020)] in layered bulk Sb 2 Si 2 Te 6 . We attribute the large enhancement of ZT in the single layer material to the increase in the thermoelectric power factor resulting from the complex Fermi surface. Our work reveals the great potential of a single-layer Sb 2 Si 2 Te 6 for wide-temperature-range thermoelectric applications.

36 MATERIALS SCIENCE↗