Search NASASearch

Engineering topics

Li, Yongjun

Publications and source records attributed to Li, Yongjun.

The EIC accelerator: design highlights and project status

The design of the electron-ion collider (EIC) at Brookhaven National Laboratory is well underway, aiming at a peak electron-proton luminosity of 10e+34 cm^-1·sec^-1. This high luminosity, the wide center-of-mass energy range from 29 to 141 GeV (e-p) and the high level of polarization require innovative solutions to maximize the performance of the machine, which makes the EIC one of the most challenging accelerator projects to date. The complexity of the EIC will be discussed, and the project status and plans will be presented.

43 PARTICLE ACCELERATORS

Dedicated beam position monitor pair for model-independent lattice characterization at NSLS-II

This paper reports recent lattice characterization results obtained at the National Synchrotron Light Source II (NSLS-II) storage ring, conducted without reliance on a lattice model. A pair of beam position monitors (BPMs) with bunch-by-bunch (B$\times$B) resolution, were recently installed in a section of the storage ring free of magnetic fields. The new BPM pair measured the beam, or bunch’s transverse Poincaré map precisely after the beam was excited. Linear one-turn-matrices (OTM) were then derived, and from these, the 4-dimensional coupled Twiss parameters were extracted at the locations of the BPM pair. By normalizing beam oscillation amplitudes with the Twiss parameters, the global action-variables were obtained. Additionally, these action-variables facilitated the measurement of the local Twiss parameters observed by other BPMs independent on lattice model. This method is general, and particularly useful in certain scenarios such as a round beam mode in a diffraction-limited light source ring. We applied it to assess both weakly and strongly coupled lattices at the NSLS-II ring. Through analysis of the strongly coupled lattice, the quadrupole tilt errors were estimated to be less than 400 μrad. Utilizing the BPMs’ B$\times$B resolution, for the first time we observed the variations of the linear lattice along a long bunch-train.

36 MATERIALS SCIENCE

Dedicated beam position monitor pair for model-independent lattice characterization at NSLS-II

This paper reports recent lattice characterization results obtained at the National Synchrotron Light Source II (NSLS-II) storage ring, conducted without reliance on a lattice model. A pair of beam position monitors (BPMs) with bunch-by-bunch (B×B) resolution, were recently installed in a section of the storage ring free of magnetic fields. The new BPM pair measured the beam, or bunch’s transverse Poincar´e map precisely after the beam was excited. Linear one-turn-matrices (OTM) were then derived, and from these, the 4-dimensional coupled Twiss parameters were extracted at the locations of the BPM pair. By normalizing beam oscillation amplitudes with the Twiss parameters, the global action-variables were obtained. These action-variables facilitated the measurement of the local Twiss parameters observed by other BPMs independent on lattice model. This method is general, and particularly useful in certain scenarios such as a round beam mode in a diffraction-limited light source ring. We applied it to assess both weakly and strongly coupled lattices at the NSLS-II ring. Through analysis of the strongly coupled lattice, the quadrupole tilt errors were estimated to be less than 400 µrad. Utilizing the BPMs’ B×B resolution, for the first time we observed the variations of the linear lattice along a long bunch-train.

43 PARTICLE ACCELERATORS

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

Bhapkar, Udayan V.