Engineering topics

Li, Yuxuan

Publications and source records attributed to Li, Yuxuan.

3 records

DOE OSTI2022

MgZnO High‐Voltage Transparent Thin‐Film Transistors Built on Glass

Recently, there has been increasing interest in building‐integrated photovoltaic (BIPV), which enables harvesting solar energy effectively. Large‐area glass components such as windows are widely used in modern constructions. In addition to the PV on opaque components such as walls and roofs, the transparent photovoltaic (TPV) directly built on glass is complementary to fully utilize the PV energy in BIPV. A high‐voltage transparent thin‐film transistor (HVTTFT) built on glass is an ideal option for distributed microinverters for TPV modules. A wide‐bandgap oxide‐based HVTTFT on glass for this purpose is reported. The HVTTFT on glass uses ZnO‐based materials with different functions for two roles: a semiconductor Mg 0.01 Zn 0.99 O (MZO) as TFT channel and Al‐doped ZnO (AZO) as transparent conductive oxide (TCO) electrodes. The centrosymmetric circular structure of the MZO HVTTFT with a high‐k‐stacking gate dielectric enables a blocking voltage as high as ≈1 kV and an on/off ratio of 10 6 . The device exhibits an average optical transmittance of 81% over the visible spectrum.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2021

Sustained Oxygen Spectral Gaps and Their Dynamic Evolution in the Inner Magnetosphere

Van Allen Probes observations of ion spectra often show a sustained gap within a very narrow energy range throughout the full orbit. To understand their formation mechanism, we statistically investigate the characteristics of the narrow gaps for oxygen ions and find that they are most frequently observed near the noon sector with a peak occurrence rate of over 30%. The magnetic moment (μ) of the oxygen ions in the gap shows a strong dependence on magnetic local time (MLT), with higher and lower μ values in the morning and afternoon sectors, respectively. Moreover, we find through superposed epoch analysis that the gap formation also depends on geomagnetic conditions. Those gaps formed at lower magnetic moments (μ < 3,000 keV/G) are associated with stable convection electric fields, which enable magnetospheric ions to follow a steady drift pattern that facilitates the gap formation by corotational drift resonance. On the other hand, gaps with higher μ values are statistically preceded by a gradual increase of geomagnetic activity. Here, we suggest that ions within the gap were originally located inside the Alfven layer following closed drift paths, before they were transitioned into open drift paths as the convection electric field was enhanced. The sunward drift of these ions, with very low fluxes, forms a drainage void in the dayside magnetosphere manifested as the sustained gap in the oxygen spectrum. This scenario is supported by particle-tracing simulations, which reproduce most of the observed characteristics and therefore provide new insights into inner magnetospheric dynamics.

79 ASTRONOMY AND ASTROPHYSICS↗

DOE OSTI2021

Negative Capacitance MgZnO-Channel Thin-Film Transistor With Ferroelectric NiMgZnO in the Gate Stack

We demonstrate the negative capacitance thin-film transistor (NC-TFT) on glass substrate using the multifunctional MgZnO (MZO). The Mg 0.03 Zn 0.97 O semiconductor layer acts as the TFT channel for stable operation while the Ni-doped MZO, i.e. Ni 0.02 Mg 0.15 Zn 0.83 O (NMZO) serves as the ferroelectric layer in the NMZO/SiO 2 stacking gate dielectric structure. The subthreshold swing (SS) value is significantly reduced over the reference TFT without ferroelectric layer. The minimum SS value of the NC-TFT reaches 52 mV/dec while the on/off ratio of drain current ID reaches 10 9 .

77 NANOSCIENCE AND NANOTECHNOLOGY↗