Thermal expansion of the cubic (3C) polytype of SiC
Thermal expansion of the cubic beta or (3C) polytype of SiC was measured from 20 to 1000 C by the X-ray-diffraction technique. Over that temperature range, the coefficient of thermal expansion can be expressed by a second-order polynomial. It increases continuously from about 3.2 x 10 to the -6th/C at room temperature to 5.1 x 10 to the -6th/C at 1000 C, with an average value of 4.45 x 10 to the -6th/C between room temperature and 1000 C. This trend is compared with other published results and is discussed in terms of structural contributions to the thermal expansion.