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Liang, Jierui

Publications and source records attributed to Liang, Jierui.

Direct neutron-diffraction-based measurement of magnetic order in brownmillerite SrCoO 2.5 and La 0.5 Sr 0.5 CoO 2.5 thin films

Epitaxial cobaltites have emerged as exemplary materials for electrochemical gating, in large part due to their topotactic perovskite (P) ↔ brownmillerite (BM) transformations. SrCoO 3-δ , for example, can be cycled between metallic ferromagnetic P SrCoO 3 and insulating BM SrCoO 2.5 , realizing exceptional modulation of electronic, thermal, and optical properties. It is often presumed that such cycling also generates ferromagnetic–antiferromagnetic (F-AF) modulation due to the G-type AF order in bulk SrCoO 2.5 . Little is understood about magnetism in thin-film BM SrCoO 2.5 , however, meaning that the true magnetic property modulation is unclear. We address this here through a neutron diffraction study of BM La 1-x Sr x CoO 2.5 films at x = 0.5 and 1.0. Lightly compressively strained SrCoO 2.5 films are shown to retain G-type AF order, albeit with suppressed Néel temperature (~340 K). Of high interest for AF spintronics, room-temperature F–AF cycling is thus possible across the SrCoO 3-δ P ↔ BM transformation. At x = 0.5, however, BM La 0.5 Sr 0.5 CoO 2.5 films are found to exhibit no detectable G-type AF order but instead weak F order (Curie temperature ~115 K), unveiling a La 0.5 Sr 0.5 CoO 3-δ phase diagram with two distinct F phases. These results thus uncover new, unanticipated magnetic phase behavior in these materials, in addition to being directly relevant to cobaltite-based magnetoionics.

36 MATERIALS SCIENCE↗

Facile integration of giant exchange bias in Fe 5 Ge Te 2 / oxide heterostructures by atomic layer deposition

Exchange bias arises from the interfacial exchange coupling in ferromagnet-antiferromagnet bilayers and manifests as a horizontal shift of the magnetic hysteresis loop, constituting a critical component underpinning a broad range of magnetoresistive logic and memory devices. The facile implementation of exchange bias in van der Waals (vdW) magnets would be a key step towards practical devices for emerging vdW spintronics. Here, in this paper, we report an easy approach to establishing strong exchange bias in the vdW magnet Fe 5 GeTe 2 by a single-step process—atomic layer deposition (ALD) of oxides on Fe 5 GeTe 2 . We successfully created exchange bias of 300–1500 Oe in Fe 5 GeTe 2 /Al 2 O 3 , Fe 5 GeTe 2 /ZnO, and Fe 5 GeTe 2 /V 2 O 5 heterostructures, at 130 K. Control experiments showed that increasing the oxidant pulse duration in each ALD cycle or utilizing the stronger oxidant O 3 can enhance the exchange bias strength, revealing the key role of the ALD oxidants. Our systematic work elucidates the essential role of ALD-enabled oxidization of Fe 5 GeTe 2 in the formation of exchange bias, and establishes ALD of oxides as a facile, controllable, and generally effective approach to creating giant exchange bias in vdW magnets, representing an integral advance towards practical vdW spintronic devices.

36 MATERIALS SCIENCE↗

Molecularly Thin Electrolyte for All Solid-State Nonvolatile Two-Dimensional Crystal Memory

A molecularly thin electrolyte is developed to demonstrate a nonvolatile, solid-state, one-transistor (1T) memory based on an electric-double-layer (EDL) gated WSe 2 field-effect transistor (FET). The custom-designed monolayer electrolyte consists of cobalt crown ether phthalocyanine and lithium ions, which are positioned by field-effect at either the surface of the WSe 2 channel or an h-BN capping layer to achieve “1” or “0”, respectively. Bistability in the monolayer electrolyte memory is significantly improved by the h-BN cap with density functional theory (DFT) calculations showing enhanced trapping of Li+ near h-BN due to a ~1.34 eV increase in the absolute value of the adsorption energy compared to vacuum. The threshold voltage shift between the two states corresponds to a change in charge density of ~2.5 × 10 12 cm –2 , and an On/Off ratio exceeding 10 4 at a back gate voltage of 0 V. The On/Off ratio remains stable after 1000 cycles and the retention time for each state exceeds 6 h (max measured). Furthermore, when the write time approaches 1 ms, the On/Off ratio remains >10 2 , showing that the monolayer electrolyte-gated FET can respond on time scales similar to existing flash memory. The data suggest that faster switching times and lower switching voltages could be feasible by top gating.

2D crystal↗